MOTOROLA SC {DIODES/0PTO? oi peuaervess covasae s BD T2547 2N5441 Triacs thru Silicon Bidirectional Triode Thyristors 2N5446 ... designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power switching systems; or wherever full-wave, silicon gate controlled solid-state devices are needed. @ Glass Passivated Junctions and Center Gate Fire Isolated Stud for Ease of Assembly Gate Triggering Guaranteed In All 4 Quadrants TRIACs 40 AMPERES RMS 200 thru 600 VOLTS MAXIMUM RATINGS Rating Symbol Value Unit *Peak Repetitive Off-State Voltage VDRM Volts (Ty = 65 to +110C) 1/2 Sine Wave 50 to 60 Hz, Gate Open *Peak Principal Voltage . CASE 263-04 2N5441, 2N5444 200 STYLE 1 2N6442, 2N5445 400 2N5444 thru 2N5446 2N5443, 2N5446 600 *RMS On-State Current IT(RMS) Amps (Tc per Figure 2) 40 (To = +100C) 20 Full Sine Wave, 50 to 60 Hz CASE 310-02 ae STYLE 1 *Peak Non-Repetitive S$ Current I 300 eak Non-Repetitive Surge Curr TSM Amps 2N5441 thru 2N5443 (One Full Cycle of surge current at 60 Hz, preceded and followed by a 40 A RMS current, Ty = +110C) *Paak Gate Power PGmM 40 Watts (Pulse Width = 10 zs Max) *Average Gate Power Pa@(av) 0.75 Watt *Peak Gate Current (10 us Max) IGm 4 Amps *Peak Gate Voltage VGM 30 Volts *Operating Junction Temperature Range Ty -65 to +110 C *Storage Temperature Range Tstg ~65 to +150 C *Stud Torque _ 30 in, Ib. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction to Case Rac "CW 2N5441, 2N5442, 2N5443 08 2N5444, 2N5445, 2N5446 0.9 *Indicates JEDEC Registered Data a MOTOROLA THYRISTOR DEVICE DATA 3-67MOTOROLA SC {DIODES/oOPTOF ~ Ob DEffEan7255 oovassa 2? P27 2N5441 thru 2N5446 ELECTRICAL CHARACTERISTICS (Tc = 25C, and either polarity of MT2 to MT1 voltage, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit *Peak Forward or Reverse Blocking Current IDRM: RRM (Rated VprM of VARM) Ty = 25C _ - 10 pA Ty = 110C _ 0.5 4 mA *Peak On-State Voltage VIM - 1.65 1.85 Volts (ITM = 56 A Peak, Pulse Width < 1 ms, Duty Cycle < 2%) Gate Trigger Current (Continuous dc), Note 1 IGT mA (Main Terminal Voltage = 12 Vdc, Ry = 50 Ohms) MT2(+), G+) _ - 70 MT2(+}, G(-) _ - 70 MT2(), G(-) _ - 70 MT2(), G(+) _- ~_ 100 *M12(+), G+}; MT2(), G(-) Te = 65C _ _ 125 *MT2(+), G(); MT2(-}, Gl+) Te = 65C _ _ 240 *Gate Trigger Voltage (Continuous dc} VGT Volts (Main Terminal Voltage = 12 Vde, Ry = 50 Ohms) MT2{+), G(+) MT2(+), G(-) 2 MT2(), G(-) - 2 MT2(), G(+) _ 2 *All Quadrants, T = 65C 25 *Main Terminal Voltage = Rated VpRM = Ri = 10 k ohms, _ - 3.4 Ty = +110C 0.2 _ _ *Holding Current ty mA (Main Terminal Voltage = 12 Vdc, Gate Open) (Initiating Current = 150 mA) To = 25C = - 70 *To = 65C 100 *Turn-On Time . tgt _ 1 2 us (Main Terminal Voltage = Rated Vor: TM = 56 A, Gate Source Voltage = 12 V, Rg = 12 Ohms, Rise Time = 0.1 ps, Pulse Width = 2 us} *Critical Rate-of-Rise of Commutation Voltage dv/dt(c} Vips (Rated VpRM: tm = 40 A, Commutating di/dt = 22 A/ms, gate energized) Te = 70C 2N5441, 2N5442, 2N5443 5 30 _ = 65C +2N5444, 2N5445, 2N5446 5 30 _ 5 30 _ Critical Rate-of-Rise of Off State Voltage dv/dt Vips (Rated VpRM: Exponential Voltage Rise, Gate Open, Tc = 110C) 2N5441, 2N5444 50 : 2N6442, 2N5445 30 : 2N5443, 2N5446 20 ! *Indicates JEDEC Registered Data for 2N5541 thru 2N5446. Note 1. All voltage polarities referenced to main terminal 1. 3-68MOTOROLA SC {DIODES/OPTO} oi peQesezess oovassy 9 : 6267255 MOTOROLA SC (DIQDES/OFPTO) O1E 7&994 Oo T-2AS-(7 2N5441 thru 2N5446 FIGURE 1 ON-STATE POWER DISSIPATION FIGURE 2 ~ RMS CURRENT DERATING - # OT CORRENT WAVEFORM > SINUSOIDAL 0 T_T TT T _ LLOAD = RESISTIVE OR INDUCTIVE CURRENT WAVEFORM = SINUSOIDAL Ez CONDUCTION ANGLE = 360 \/ 120; LOAD = RESISTIVE OR INDUCTIVE Z Fo) a1 horn wu CONDUCTION ANGLE = 360 - SL. YH 2 S110 a f Wa <5 ~~ a LA Su 237 ff i Ss 100 a 3e = [| 10% 7600 MAXIMUM ZL 2 | mie oy am ]) PRESS-FIT TYPES = LY Be or | a! 2 20} i es 40 / Le _ STUD TYPES ur CONDUCTION ANGLE ze sot | ~ ge | mat OM A TYPICAL z ; SX ec . 0 a = 10 1 BS top 9 rwoPyl 7360 IsoLaten SN =< AS STUD TYPES" = 80; CONDUCTION ANGLE a =Ol+ Cun x 9 ez 50 ol 0 10 20 30 40 0 10 20 30 40 50 IT(AMS), FULL CYCLE RMS ON-STATE CURRENT (AMP) ITERMS). RMS ON-STATE CURRENT (AMP) FIGURE 3 TYPICAL GATE TRIGGER VOLTAGE FIGURE 4 TYPICAL GATE TRIGGER CURRENT 70 50 OFF-STATE VOLTAGE = 12V OFF-STATE VOLTAGE = 12 V 30 20 Igt. GATE TRIGGER CURRENT (mA) 1 QUADRANTS 3 10 4 Vgt, GATE TRIGGER VOLTAGE (VOLTS) : 70 $0 -40 -20 0 20 40 60 86 160 120 140 60 -40 -20 9 20 40 60 80 100 120 140 Ty, SUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (2C} FIGURE 5 TYPICAL THERMAL RESPONSE EAND ISOLATED STUD =r{t) Raic r{t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.05 0.1 0.2 05 1.0 2.0 5.0 10 20 50 100 200 00 tk 2k 5k t, TIME (ms) MOTOROLA THYRISTOR DEVICE 3-69MOTOROLA SC {DIODES/OPTO} OL DEfpb367255 0078995 O 7-2s 2N5441 thru 2N5446 FIGURE 6 ON-STATE CHARACTERISTICS FIGURE 7 TYPICAL HOLDING CURRENT a GATE OPEN 20 = = 6 a x c 3 o z 5 o = = 59 MAIN TERMINAL #2 POSITIVE 40 = -~40 = -20 0 20040 60 tn PC Tj, JUNCTION TEMPERATURE (C) FIGURE 8 MAXIMUM ALLOWABLE SURGE CURRENT itm, INSTANTANEOUS ON-STATE CURRENT (AMP) Ty= -65 to 110C f= 60 ITSM, PEAK SINE WAVE CURRENT (AMP) 1.0 2.0 5.0 7.0 10 20 0 70 100 TM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) NUMBER OF FULL CYCLES Coit ce A Sa MOTOROLA THYRISTOR DEVICE DATA 3-70 Te oe ee