MPC17533 :MAR.19. 2002 REV.0.4
SMARTMOSRMPC17533
16PIN SVMFP
2 Channel H-Bridge Driver IC
MPC17533 is a monolithic type SMOS5AP
SMARTMOS IC built in 2 channel H-Bridge
Driver constituted LDMOSFET, input section
can be directly interfaced from the MCU.
This IC can control 4 mode output function
(Forward, Reverse, Brake, Open) by input logic.
This IC can drive various type of micro motor
and low loss by parallel drive because each
block is very accurate for high speed drive
and independent input/output circuit.
Features
- Manufactured by SMOS5AP process technology
1
*SMARTMOS is a registered trademark of Motorola Inc.
*Specifications in this data sheet may be changed without prior notice.
Product Preview
- Built in 2 Channel Circuit of H-Bridge Driver
- 4 Mode Drive(Forward, Reverse, Brake, Open)
- Direct Interface from the MCU
- Low ON-Resistance Ron=0.8 ohm(typ)
- IDR=0.7A (Cont.)
- Low Consumption Power
- Built in Shoot Through Current Prevention Circuit
- Built in Low Voltage Shutdown Circuit
- PWM Control frequency 200kHz(Max.)
- Comes in 16-pin Very Fine Mini-flat Package
(pin pitch : 0.65mm)
- Dual Channel Parallel Drive (Ron=0.8 ohm:typ)
MPC17533
1
2
3
4
5
6
7
8
OUT1A
IN1A
IN1B
VC
OUT1B
14
13
12
11
10
9
16
15
PGND2
IN2A
IN2B
VG
VM2
PGND1
OEB
LGND
VM1 OUT2A
OUT2B
(Top View)
Pin Connections
M
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MPC17533 :MAR.19. 2002 REV.0.4
Block Diagram
2
Control
VM1
OUT2B
OUT2A
5OUT1A
PGND2
VG
IN1A
7
IN1B
VC
Low voltage
Detector
Level Shifter Predriver
Each GND pin are connected by Metal line
8
4
16
3
10
12
1
15
9
6
VM2
2
H
Bridge
1
H
Bridge
2
11
OUT1B
IN2A
IN2B
OEB
LGND
14
13
PGND1
Logic
Function Table
OEB OUT1A OUT2B
Input Output
IN1A
IN2A
Z : High impedance
X : Don't care
IN2B OUT1B
OUT2A
IN1B
L L L L L
L H
L L H L H
L H H Z Z
H X X Z Z
Pin6(OEB) is Pull-Up by internal resistance.
L H L
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MPC17533 :MAR.19. 2002 REV.0.4
Maximum Ratings
3
*1
Driver Circuit Power Supply Voltage
Control Circuit Power Supply Voltage
Singnal Input Voltage
Driver Output Current (continuous)
Driver Output Current (pulsed) *2
Operating Junction Temperature
Thermal Resistance *3
Rating Symbol Min. Max. Unit
VM
VC
VIN
IDR
IDRp
Tj
Tstg
ROja
- 0.5 8.0
- 0.5 7.0
- 0.5 VC+0.5
0.7
1.4
150
150
150
---
---
- 55
V
V
V
A
A
*2) Ta=25C, Peak time is within 10ms at intervals 0.2seconds.
*3) 37 X 50 X 1.6[mm] Glass EPOXY Board mount.
*1) Device may be damaged when used over the ratings.
Driver Circuit Power Supply Voltage
Control Circuit Power Supply Voltage
Signal Input Voltage
Operating Ambient Temperature
Characteristics Symbol Min. Unit
VM
VC
VIN
Topr
2.0
0
-20
---
V
V
V
FIN kHz
Pulse Input Frequency
Input Pulse Rise Time TR
TF
Input Pulse Fall Time us
---
Recommended Operating Condition
us
Storage Temperature Range ---
Max.
6.8
5.7
VC
65
200
1.0
1.0
degC
Capacitor for Charge Pump C1,C2,C3
---
Pre-Driver Circuit Power Supply Voltage VG - 0.5 14.0 V
2.7
0.01 1.0 uF
Pre-Driver Circuit Power Supply Voltage
VG V13.512
Typ.
5.0
5.0
---
25
---
---
---
0.1
13
Power Dissipation *4 PD 830--- mW
degC./W
*4) Ta=25C
degC
degC
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MPC17533 :MAR.19. 2002 REV.0.44
Driver Circuit Power Supply Current
Control Circuit Power Supply Current
Logic Input Function
High Level Input Voltage
Characteristics Symbol Min. Max. Unit
IMO
ICO
VIH
A
1.0
20
---
---
V
V
DC CHARACTERISTICS
Typ.
Quiescent Power Supply Current
us
uA
UA
1.5
---
---
--- uA
Low Level Input Voltage
Driver Output ON Resistance
VIL
RON
VCx0.7 VCx0.3
---
---
ohm
E
D
(Ta=25C, VC=VM=5.0V, GND=0V)
Turn-ON time
Characteristics
Symbol Min. Max. Unit
tPLH
tPHL 0.5
---
--- 0.1
Typ.
Output Propagation Delay Time
Turn-Off time us
1.2
---
0.8
High Level Input Current
Low Level Input Current IIH
IIL - 1.0
---
---
--- uA
Low Voltage Detection Circuit VCDET 2.52.0
tPLH
50%
10%
IN1,IN2
OUTA,OUTB
Detection Voltage
50%
90%
---
1.0
V
C
C
0.50.1
tPHL
--- *1
*2
*3
*4
Test
circuit
AC CHARACTERISTICS (Ta=25C, VC=VM=5.0V, GND=0V)
Test
circuit
tPLH,tPHL Timing Chart
---
D
Low Voltage Detection Circuit tVCDET
Detection time --- ms
tVCDETon
50%
0%(<1uA)
VC
IM
50%
90%
tVCDEToff
tVCDET Timing Chart
1.5
10
2.5
VCDETon VCDEToff
Control Circuit Power Supply Current IC 3.0
---
Active Power Supply Current
mA
---
B
*1) ICO includes current to the pre-driver circuit.
*4) IDR=0.7[A] source+sink
*3) 2.7V < VC < 5.7V
*5) When no input logic signal .
*6) Detection voltage is defined output become High-impedance when VC voltage is dropped.
When the gate voltage VG is applied from an external source, VG=7.5[V]
*2) IC includes current to the pre-driver circuit. IC:Fin100kHz. IG:Fin20kHz.
*6
Pre-Driver Circuit Power Supply Current IG 0.7
--- mA
---
--- uA
50
IIL 100
OEB pin
Pre-Driver CircuitPower Supply Current IGO 150
--- --- UA
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MPC17533 :MAR.19. 2002 REV.0.45
Symbol PIN No. Simplified Circuit Schematic Function
VC 5
VM1
OUT1A
IN2A
2
1
8
OEB
VG
IN1A
VC
Pin Description
OUT1B
PGND1
9
1
11
8
2
5
3
3
12
4
6
13
Control Circuit
Power Supply Pin
Driver Power Supply
Voltage Input Pin
Driver Output Pin
Driver Output Pin
Power GND Pin
Pre-Driver Circuit Power Supply Pin
Control Signal
Input Pin
Enable Control
Signal Input Pin
VM2
OUT2A
11
15
10
OUT2B
PGND2
16
15
16
10
9
Driver Power Supply
Voltage Input Pin
Driver Output Pin
Driver Output Pin
Power GND Pin
IN1B
IN2B
4
6
13
14
VC
14
LGND 7
ControlCircuit GND Pin
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MPC17533 :MAR.19. 2002 REV.0.46
Test Circuit
5V 5V
AIIN
VIN
V
Test Circuit B
VC VM
MPC17533
PGND/LGND
IN1A
IN1B
IN2A
IN2B
OEB
OUT1A
OUT2A
OUT1B
OUT2B
13V
VG
5V 5V
R=8 [ohm]
VC VM
MPC17533
Test Circuit C
IN1A
IN1B
IN2A
IN2B
OEB
OUT1A
OUT2A
PGND/LGND
OUT1B
OUT2B
R=8 [ohm]
13V
VG
VC VM
MPC17533
OUT1A
OUT2A
5V 5V
Test Circuit A
AA
ICO IMO
PGND/LGND
IN1A
IN1B
IN2A
IN2B
OEB
OUT1B
OUT2B
VG
13V
A
IGO
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MPC17533 :MAR.19. 2002 REV.0.4
V
5V
VC VM
MPC17533
Test Circuit D
V
OUT1A
OUT2A
PGND/LGND
OUT1B
OUT2B
IN1A
IN1B
IN2A
IN2B
OEB
Fin
5V
VC VM
MPC17533
VG
OUT1A
OUT2A
PGND/LGND
OUT1B
OUT2B
IN1A
IN1B
IN2A
IN2B
OEB
A
5V
Test Circuit E
100kHz
A
13V
For IG Test
13V
VG
Test Circuit
7
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MPC17533 :MAR.19. 2002 REV.0.4
VG < 14[V]
MPC17533
OPEN
VG
C2H
8
(1)When applying the gate voltage VG from an external source, be sure to connect it via a
resistor equal to or greater than RG=VG/0.02[ohm]. However, this resistance is unnecessary
if you are connecting a charge pump output from a SMARTMOS product.
(2)Switching from the state of active current loading to high-impedance mode, indactance load
and P.C.B. layout may induce over maximum ratings to a power supply pin. Zener diode or
capacitor at VM pin will protect kick back voltage(it depends on the indactance load).
The schottky diode at output pin will also protect it.
Precautions on Application
C1H
C2L
C1L
RG > VG/0.02[ohm]
CG = 0.01[uF]
VM
OUTA
OUTB
VM
OUTA
OUTB
(3)Connect a capacitor of sufficient capacitance between the power supply and ground pins.
For all large-current paths, use sufficiently wide copper conductor patterns and route them
in the shortest distance possible.
(4)When using SMARTMOS products in your circuit design, make sure they are fully protected
against static charge.
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16 ピン SVMFP 外形寸法図
SPEC
MIN TYP MAX
A ***** 1.95 2.05
A1 0.10 0.15 0.20
0.25 0.30 0.35
C 0.18 0.20 0.25
D ***** 5.45 MAX
D1 5.20 5.25 5.30
e 0.60 0.65 0.70
E 5.25 5.30 5.35
He 7.70 7.90 8.10
L 0.45 0.60 0.75
L1 1.20 1.30 1.40
***** ***** 0.12
0.05
Z1 0.25 0.35 0.47
θ0.0°4.0°9.8°
A
Z1 e
b
xyL1
L
A
D
D1
H
e
E
C
A1
θ
A部拡大図
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権利に基づくライセンスを許諾するものでもありません。当社の製品は、外科的に人体に移植することを意図したシステムの構成
部品として、または、他の生命維持を意図した用途に、または、当社の製品の不具合により人体に危害を加えたり死に至らしめる
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このような意図または許可されていない用途のために当社の製品を購入あるいは使用する場合、購入者は当社およびその役員、
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SPS.TSPG.GAO
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