FMMT549 PNP Low Saturation Transistor Features * ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. * Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Unit VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current - Continuous - Peak Pulse Current -1 -2 A A TJ Junction Temperature 150 C -55 to +150 C TSTG Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150 degrees C. 2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics* Symbol PD RJA Parameter Value Unit Total Device Dissipation, by RJA Derate above 25C 500 4 mW mW/C Thermal Resistance, Junction to Ambient 250 C/W * Device mounted on FR-4 PCB 4.5" X 5", mounting pad 0.02 in2 of 2 oz copper. (c) 2009 Fairchild Semiconductor Corporation FMMT549 Rev. C1 www.fairchildsemi.com 1 FMMT549 -- PNP Low Saturation Transistor August 2009 Symbol TA = 25C unless otherwise noted Parameter Conditions Min. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -30 V BVCBO Collector-Base Breakdown Voltage IC = -100A, IE = 0 -35 V BVEBO Emitter-Base Breakdown Voltage IE = -100A, IC = 0 -5.0 V ICBO Collector Cutoff Current VCB = -30V, IE = 0 VCB = -30V, IE = 0, TA = 100C -100 -10 nA A IEBO Emitter Cutoff Current VEB= -4.0V, IC=0 -100 nA On Characteristics* hFE DC Current Gain VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -500mA VCE = -2.0V, IC = -1A VCE = -2.0V, IC = -2A 70 100 80 40 300 VCE (sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100mA IC = -2A, IB = -200mA -500 -750 mV mV VBE (sat) Base-Emitter Saturation Voltage IC = -1A, IB = -100mA -1.25 V VBE (on) Base-Emitter On Voltage IC = -1A, VCE = -2.0V -1.0 V Small Signal Characteristics fT Cob Current Gain Bandwidth Product IC = -100mA, VCE = -5V, f = 100MHz Output Capacitance VCB = -10V, IE = 0, f = 1MHz 100 MHz 25 pF * DC Item are tested by Pulse Test: Pulse Width300s, Duty Cycle2% (c) 2009 Fairchild Semiconductor Corporation FMMT549 Rev. C1 www.fairchildsemi.com 2 FMMT549 -- PNP Low Saturation Transistor Electrical Characteristics Collector- Emitter Voltage vs Collector current Current Gain vs Collector Current 600 800 500 3.5mA 600 3mA 2.5mA 500 2mA 400 1.5mA 300 200 1mA 100 Ib=0.5mA 0 H FE - CURRENT GAIN Collector Current, Ic [mA] Vce = 2.0V 4mA 700 400 125C 300 25C 200 - 40C 100 0 1 2 3 4 0 0.0001 5 VBESAT -BASE-EMITTER SATURATION VOLTAGE(V) Base-Emitter On Voltage vs Collector Current 1.6 Vce = 2.0V 1.4 1.2 1 - 40 C 0.8 0.6 25 C 0.4 125 C 0.2 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 1.6 = 10 1.4 1.2 1 - 40 C 0.8 0.6 25 C 125 C 0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 120 = 10 f V=ce1.0MHz = 2.0V - 40C 1 100 125C 0.8 0.6 25C 0.4 0.2 C ibo 80 60 40 Cobo 20 0.1 1 I C - COLLECTOR CURRENT (A) 0 0.1 10 (c) 2009 Fairchild Semiconductor Corporation FMMT549 Rev. C1 10 Input/Output Capacitance vs Reverse Bias Voltage 1.2 0 0.01 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) Base-Emitter Saturation Voltage vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current CAPACITANCE (pf) VCESAT - COLLECTOR-EMITTER VOLTAGE (V) V BEON- BASE-EMITTER ON VOLTAGE (V) Collector-Emitter Voltage, Vce[V] 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 www.fairchildsemi.com 3 FMMT549 -- PNP Low Saturation Transistor Typical Performance Characteristics FMMT549 -- PNP Low Saturation Transistor Physical Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters (c) 2009 Fairchild Semiconductor Corporation FMMT549 Rev. C1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com