FMMT549 — PNP Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 1
August 2009
FMMT549
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continuous.
•Sourced from process PB.
Absolute Maximum Ratings* TA = 25°C unless othe rwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations
Thermal Characteristics*
* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in2 of 2 oz copper.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -30 V
VCBO Collector-Base Voltage -35 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current - Continuous
- Peak Pulse Current -1
-2 A
A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Unit
PDTotal Device Dissipation, by RθJA
Derate above 25°C500
4mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 250 °C/W
1. Base 2. Emitter 3. Collector
SuperSOT-23
Marking : 549
1
2
3
FMMT549 — PNP Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 2
Electrical Characteristics TA = 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Conditions Min. Max. Units
Off Characteristics
BVCEO Collector-Emitter Breakdown V oltage IC = -10mA, IB = 0 -30 V
BVCBO Collector -Base Breakdown Volt a ge IC = -100μA, IE = 0 -35 V
BVEBO Emitter-Base Breakdown Voltage IE = -100μA, IC = 0 -5.0 V
ICBO Collector Cutoff Current VCB = -30V, IE = 0
VCB = -30V, IE = 0, TA = 100°C-100
-10 nA
μA
IEBO Emitter Cutoff Current VEB= -4.0V, IC=0 -100 nA
On Characteristics*
hFE DC Current Gain VCE = -2.0V, IC = -50mA
VCE = -2.0V, IC = -500mA
VCE = -2.0V, IC = -1A
VCE = -2.0V, IC = -2A
70
100
80
40
300
VCE (sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100mA
IC = -2A, IB = -200mA -500
-750 mV
mV
VBE (sat) Base-Emitter Saturation Voltage IC = -1A, IB = -100mA -1.25 V
VBE (on) Base-Emitter On Voltage IC = -1A, VCE = -2.0V -1.0 V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = -100mA, VCE = -5V,
f = 100MHz 100 MHz
Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz 25 pF
FMMT549 — PNP Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 3
Typical Performance Characteristics
012345
0
100
200
300
400
500
600
700
800
4mA
3.5mA
3mA
2.5mA
1mA
Ib=0.5mA
2mA
1.5mA
Collector Current, Ic [mA]
Collector-Emitter Voltage, Vce[V]
Collector- Emitter Voltage vs
Collector current
Current Ga in vs Collecto r Current
0.0001 0.001 0.01 0.1 1 10
0
100
200
300
400
500
600
I - COL L ECTO R CURRE NT (A)
H - CURRENT G AIN
C
FE
25° C
12 5°C
- 40° C
V = 2.0V
ce
Base- Emitt er On Voltage vs
Collector Current
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT ( A)
V - BASE -EMITTER O N VOLTAGE (V)
C
BEON
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Base-Emitter Saturation
Vol t age vs Collec tor Cur rent
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT ( A)
V -BASE-EMITTER SATURATION VOLTAGE(V)
C
BESAT
25 °C
- 40 °C
125 °C
β = 10
Collector-Emitter Saturation
Vol t age vs Col lecto r Cu rrent
0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
1
1.2
I - COLL ECTO R CU RR ENT (A)
V - COLLECTOR- E MITTER VOLTA GE ( V)
C
CESAT
- 40°C
25°C
12 5 ° C
β = 10
I npu t/Output C apacitance vs
Reverse Bia s Volta ge
0.1 0.5 1 10 20 50 100
0
20
40
60
80
100
120
V - COLLECTOR VOLTAGE (V)
CAPACIT ANCE (pf)
CE
V = 2.0V
ce
C
ibo
C
obo
f = 1.0MHz
FMMT549 — PNP Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 4
Physical Dimensions
Dimensions in Millimeters
0.96~1.14
0.12
0.03~0.1
0
0.38 RE
F
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.02
3
0.20 MI
N
0.40 ±0.03
SOT-23
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower¥
Auto-SPM¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore¥
FETBench¥
FlashWriter®*
FPS¥
F-PFS¥
FRFET®
Global Power ResourceSM
Green FPS¥
Green FPS¥ e-Series¥
Gmax™
GTO¥
IntelliMAX¥
ISOPLANAR¥
MegaBuck™
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM¥
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START¥
SPM®
STEALTH™
SuperFET¥
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS™
SyncFET™
Sync-Lock™ ®*
The Power Franchise®
TinyBoost¥
TinyBuck¥
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TriFault Detect¥
TRUECURRENT¥*
PSerDes¥
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHI LD SEM ICONDUCTOR RESERVES THE RIG HT TO MAKE CHANGES WITHOUT FURTHER NOTI CE TO ANY PRODUCTS HEREIN TO I MPROVE
RELIABI LITY , FUNCTION, O R DESIGN. FAI RCHILD DOES NOT ASSUME ANY L IABIL ITY ARI SING OUT OF THE APPL ICATION O R USE OF ANY PRODUCT OR
CIRCUI T DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RIG HTS OF OTHERS. THESE
SPECIFI CATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDI TIONS, SPECI FICAL LY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHI LD’S PRODUCTS ARE NOT AUTHORIZED F OR USE AS CRITI CAL COM PONENTS IN LI FE SUPPORT DEVICES OR SY STEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAI RCHI LD SEM ICONDUCTOR CO RPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical im plant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, ww w.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all w arranties and will appropriately address any warranty issues t hat may arise. Fairch ild will not p rovide
any w arranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buy ing direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only. Rev. I41
