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GENERAL DESCRIPTION
The MDS70 is a COMMON BASE bipolar transistor. It is designed for
MODE S pulsed systems in the frequency band 1030-1090 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input prematch for broadband capacity. Low thermal resistance
package reduces junction temperature, extends life.
CASE OUTLINE
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 225 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 5.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150oC
Operating Junction Temperature + 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS TEST CONDITIONS MIN TYP
MAX
UNITS
Pout
Power Out 70
95 Watts
Pg Power Gain 10.3 11.65 dB
RT Rise Time 80 ns
ηc Collector Efficiency
F = 1030-1090 MHz
Vcc = 50 Volts
Pin = 6.5W
Pulse Mod: Mode S2
35 %
VSWR1 Load Mismatch Tolerance 1090 MHz 5:1
BVebo
Emitter to Base Breakdown
Ie = 5 mA 3.5 Volts
BVces Collector to Emitter Breakdown Ic = 25 mA 65 Volts
hFE DC - Current Gain Ic = 500 mA, Vce = 5 V 20
θjc1 Thermal Resistance
0.8
oC/W
Notes: 1) At rated pulse conditions 2) Mode S Burst: 0.5us (on/off), N=128, Per=6.4ms; LTDC=1%
Rev C: August 2010
MDS70
70 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090MHz