ti FAIRCHILD SEMICONDUCTOR ay DE Pf suean7y OOe7ssSi 3 i Loe eee eee fee _ FAIRCHILD 2N3253 T-35% /9 eee . ' A Schlumberger Company NPN Switching Type ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGE Temperatures 2N3253 TO-39 Storage Temperature -65 C to 200C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at | 25 C Ambient Temperature 0.8 W 25 C Case Temperature 3.0 W Voltages & Currents | Vczo Collector to Emitter Voltage 40 V (Note 4) Vcso Collector to Base Voltage 75V Veeo Emitter to Base Voltage 5.0V le Collector Current 10A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown 75 Vv lo = 10 pA, Ie =0 Voltage BVeso Emitter to Base Breakdown Voltage 5.0 Vv le = 10 wA, Ie = 0 leBo Emitter Cutoff Current 50 nA Vee = 4.0 V, lb =0 Icao Collector Reverse Current 500 nA Vce = GOV, le = 0 , (100C) 75 vA |Voe =60V, le =0 ! Icex Collector Reverse Current 500 nA | Vce = 60 V, Ves = 4.0 V Ip Base Current 500 nA Voce = 60 V, Vos = 4.0 V hee DC Pulse Current Gain (Note 5) 25 lo = 150 mA, Vee = 1.0 V 25 75 Ic = 375 MA, Vee = 1.0 V 20 lc = 750 mA, Vce = 5.0 V Veceoteus) | Collector to Emitter Sustaining Voitage | 40 Vv lc = 10 mA, ls =0 (Notes 4 & 5) Voetsay Collector to Emitter Saturation 0.35 Vv le = 150 MA, Ig = 15 MA Voltage (Pulsed) (Note 5) 0.6 Vv Ic = 500 mA, lg = 50 mA 1.2 Vv le =1.0A, Ip = 100 mA Vegan Base to Emitter Saturation Voltage 1.0 Vv Ic = 150 mA, le = 15 mA (Pulsed) (Note 5) 0.7 1.3 Vv le = 500 mA, Is = 50 mA 1.8 Vv le = 1.0A, lp = 100 mA NOTES: 1. These ratings are limiting values above which the serviceabitity of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/ C); (TO-236) junction-to-ambient thermal! resistance of 357 C/W (derating factor of 2.8 mW/ C). Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: fength = 300 ys; duty cycle < 1%. 6. For product family characteristic curves, refer to Curve Set T139. > ee 3-271 FAIRCHILD SEMICONDUCTOR 2N3253 T. 35 ~1 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL} CHARACTERISTIC MIN| MAX | UNITS TEST CONDITIONS Cop Output Capacitance 12 pF Ves = 20 V, le = 0 Cn Input Capacitance 80 pF Ves = 0.5 V, le =O te High Frequency Current Gain 1.75 Ic =50 mA, Vce = 10 V, f = 100 MHz ta Turn On Delay Time 15 ns lc = 500 mA, Ip, = 50 mA (test circult no. 3164) tr Rise Time (test circuit no. 3164) 35 ns Ic = 500 mA, Is: =50 mA ts Storage Time (test circuit no. 3165) 40 ns Ico = 500 mA, la: = Ie2 = 50 MA tt Fall Time (test circuit no. 3165) 30 ns Ic = 500 mA, Ia: = In2 = 50 MA Qr Total Control Charge 5.0 ncoul | Ic = 500 mA, Is = 50 mA (test circuit no. 3163) 3-272 tm n* oyEe FAIRCHILD SEMICONDUCTOR a4 DEB sues74 ooz7ssy 9 Bf 3469674 FAIRCHILD SEMICONDUCTOR B4D 27554 Des ee IR CHILD 2N3700/2N3701 7-29-23 a NPN Small Signal General Purpose chlumberger Company Amplifiers Veco ... 80 V (Min) @ 30 mA PACKAGE Veeiay +. 0.5 V (Max) @ 500 mA 2N3700 TO-18 2N3701 TO-18 \ ABSOLUTE MAXIMUM RATINGS (Note 1) | Temperatures Storage Temperature -65 C to 200C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 0.5 W 400 C Case Temperature 1.0W 25C Case Temperature 18W Voltages & Currents Vceo Collector to Emitter Voltage 80 V (Note 4) Vcso Collector to Base Voltage 140 V Veso Emitter to Base Voltage 7.0V le Collector Current 1.0A ELECTRICAL CHARACTERISTICS (25 G Ambient Temperature unless otherwise noted) (Note 6) 3700 3701 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX __|UNITS TEST CONDITIONS BVceo Collector to Base Breakdown 140 140 v Io = 100 pA, le = 0 Voitage BVezo Emitter to Base Breakdown 7.0 7.0 Vv le = 100 pA, Ie = 0 Valtage lezo Emitter Cutoff Current 10 10 nA Ves = 5.0V, Ie = 0 IcBo Collector Cutoff Gurrent 10 10 nA |Vca =90V, le =0 10 10 pA | Vea =90V, le =0, Ta= 150C re DC Pulse Current Gain (Note 5), 100 300 | 40 120 ic = 150 MA, Voe = 10 V 90 40 120 Ig = 10 MA, Vee = 10 V 50 30 100 Ic = 0.4 MA, Vee = 10 V 50 30 100 Ig = 500 MA, Vce = 10 V 15 15 Ic = 1.0 MA, Vee = 10 V 40 lo = 150 mA, Voce = 10 V, Ts = 58C NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature ot 200 G and junction-to-case thermal resistance of 97 C/W (darating factor of 10.3 mw? C); junction-to-ambient thermal resistance of 350 C/W (derating factor of 2.85 mW C). 4, Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 us; duty cycle < 1%. 6. For product family characteristic curves, refer to Curve Set T149. 3-274FAIRCHILD SEMICONDUCTOR ay DE Bj 3yene74 o0a7555 o iE ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) t t TEST CONDITIONS | t 3700 3701 SYMBOL | CHARACTERISTIC MIN MAX [MIN MAX | UNITS Vceotsuss | Collector to Emitter Sustaining| 80 80 Vv Ic = 30 mA, Ip = 0 Voltage (Notes 4 & 5) Veetean Pulsed Collector to Emitter 0.2 0.2 Vv Ic = 150 mA, Ip = 15 mA Saturation Voltage (Note 5) 0.5 0.5 Vv le = 500 mA, tp = 50 mA Vecisatt Base to Emitter Saturation Ww 1.1 Vv Io = 150 mA, lp = 15 MA Sie. Voltage (Pulsed) cy | Cop Output Capacitance 12 12 pF | Vce =10V, le =0, f = 1.0 MHz - Cio Input Capacitance 60 60 pF Vea = 0.5 V, Ic =0, f= 1.0 MHz hte High Frequency Current Gain | 5.0 10 4.0 10 lo = 50 mA, Voe = 10 V, f = 20 MHz Nite Small Signal Current Gain 80 | 400 | 30 | 200 le = 1.0 MA, Vee = 5.0 V, f = 1.0 kHz tp'Ce Collector to Base TimeConstant} 25 400 25 400 ps le = 10 mA, Vos = 10 V, f = 4.0 MHz NF Noise Figure 4.0 dB le = 100 pA, Vee = 10 V, f = 1.0 kHz, Re = 1.0 kO 3-275FAIRCHILD SEMICONDUCTOR 84 DER S4b9b?4 00275S5b 2 3469674 FAIRCHILD SEMICONDUCTOR 84D 27556 er 2N3724/2N3725 739! 2N4013/2N4014 NPN Small Signal High Current High Speed Switches Cem FAIRCHILD Se A Schlumberger Company Veco ... 30 V (Min) (2N3724, 2N4013), 50 V (Min) PACKAGE (2N3725, 2N4014) - 2N3724 _ TO-5 Voeisst) ... 0.65 V (Max) @ 800 mA, 0.75 V (Max) @ 1.0A 2N3725 TO-5 (2N3724, 2N4013) 2N4013 TO-18 bre... 60-150 @ 1.0 A (2N3724, 2N4013) 2N4014 TO-18 ton... 35.ns (Max), tor... 60 ns (Max) @ 500 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 GC to 200C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 4013/4 3724/5 25 C Ambient Temperature 0.36 W 0.8 W 25 C Case Temperature 12W 3.5 W Voltages & Currents 3724/4013 3725/4014 Vceo Collector to Emitter Voltage 30 V 50 V (Note 4) Veso Collector to Base Voltage 50 V 80 V Vces Collector to Emitter Voltage 50 V 80 V Veso Emitter to Base Voltage 6.0 V 6.0V lc Collector Current (Note 5) 1.0A 1.0A lc DC Collector Current 500 mA 500 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3724/4013 3725/4014 SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX | UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown| 50 80 Vv le = 10 pA, Vee = 0 Voltage BVcgo Collector to Base Breakdown 50 50 Vv Io = 10 pA, te =O Voltage BVeeo Emitter to Base Breakdown 6.0 6.0 Vv le = 10 pA, Ic = 0 Voltage NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200 G and junction-to-case thermal resistance of 50 C/W (derating factor of 20 mW/* GC) for 2N3724 and 2N3725; and 146 CW (derating factor of 685 mW/ GC) for the 2N4013 and 2N4014; junction-to-ambient thermal resistance of 219 C/W (derating factor of 4.56 mw/" C) for the 2N3724, 2N3725, and 485 C/V (derating factor of 2.06 mW/ C) for the 2N4013 and 2N4014. 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys: duty cycle = 1%. 6. For product family characteristic curves, reter to Curve Set T162 for 2N3724/5 and 1139 for 2N4013/4 a ae 3-276FATRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICON ay DE 3465674 O0e7S57 4 J : DUCTOR 2N3724/2N3725 2N4013/2N4014 84D 27557 Te 35457 Dm ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 3724/4013 3725/4014 . SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS Icgo Collector Cutoff Current 1.7 BwA | Von = 40 V, fs =0 1.7 LA Ves = 60 V, le =O 120 HA | Voce =40V, le = 0, Ta=100C 120 BA Vee = 60 V, le =0, Ta = 100 C Ices Collector Reverse Current 10 pA | Vce = 50 V, le = 0 . 10 BA Vee = 80 V, le =0 Nee DC Pulse Current Gain (Note 5) | 60 150 | 60 150 Ic = 100 MA, Vcr = 1.0 V 35 35 le = 500 mA, Vee = 1.0 V 40 40 Ic = 300 mA, Vce = 1.0 V 30 25 Io = 1.0 A, Voce = 5.0 V 30 30 lc = 10 mA, Vee = 1.0 V 25 20 lo = 800 mA, Vce = 2.0 V 30 30 Ic = 100 mA, Voe =1.0 Vv, Ta = 55C 20 20 Ic = 500 mA, Vce = 1,0 V, Ta =-55C Vceoisus | Collector to Emitter Sustaining | 30 50 Vv Ic = 10 mA, Ia = 0 Voltage (Notes 4 & 5) Veetwan Collector to Emitter Saturation 0.25 0.25 Vv Io = 10 MA, Is = 1.0 mA Valtage (Note 5) 0.2 0.26 Vv Ic = 100 mA, Ia = 10 mA1 0.32 0.4 Vv lc = 300 mA, ls = 30 mA 0.42 0.52 Vv Ic = 500 mA, Ip = 50 mA 0.65 0.8 Vv lc = 800 mA, Ip = 80 mA 0.75 0.95 Vv le =1.0A, ls = 100 mA Vecteat Base to Emitter Saturation 0.76 0.76 Vv lc = 10 mA, fa = 1.0 mA Voltage (Note 5) 0.86 0.86 Vv Ie = 100 mA, Ip = 10 mA 11 1.1 Vv Ic = 300 mA, Is = 830 mA 1.5 1.5 Vv lc = 800 mA, ls = 80 MA 1.7 7 Vv lc =1.0A, ls = 100 mA 0.8 1.1 0.8 11 Vv Ic = 500 mA, le = 50 mA Cop Output Capacitance 12 10 pF | Vee = 10V, le =0 Cio Input Capacitance 55 55 pF Vee = 0.5 V, Ie = 0 Ne High Frequency Current Gain j 3.0 3.0 Ic = 50 mA, Voe = 10 V, f = 100 MHz ton Turn On Time 35 35 ns Io = 500 mA, tay = 50 MA (test circuit no. 265) tott Turn Off Time 60 60 ns lc = 500 mA, lay = 50 mA, (test circuit no. 265) lp2 = -50 mA 3-277FAIRCHILD SEMICONDUCTOR ay DER 34b4b74 0027558 b l- ; 3459674 FAIRCHILD SEMICONDUCTOR 84D 27558 De nn wed 2N3903/FTSO3903 7=25-5 eee = 2N3904/FTSO3904 A Schlumberger Company NPN Small Signal General Purpose Amplifiers & Switches @ Voeo ... 40 V (Min) PACKAGE i bre ... 100-300 @ 10 mA (2N/FTSO3904) 2N3903 TO-92 e NF... 5.0 dB (Max) Wide Band (2N/FTSO3904) 2N3904 TO-92 Complements ... 2N3905, 2N3906 FTSO3903 TO-236AA/AB FTSO3904 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 C to 150C Operating Junction Temperature 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N FTSO 25 C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25 C Case Temperature 1.0 W ; Voltages & Currents Vceo Collector to Emitter Voltage 40V (Note 4) Vceo Collector to Base Voltage 60V Veso Emitter to Base Voltage 6.0 V Ic Collector Current 200 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 5) 3903 3904 SYMBOL | CHARACTERISTIC MIN MAX} MIN MAX _|{ UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown) 40 40 Vv Ic = 1.0 mA, Ip =0 Voltage (Note 4) BVcso Collector to Base Breakdown 60 60 Vv Ic = 10 pA, le = 0 Voltage BVeso Emitter to Base Breakdown 6.0 6.0 Vv le = 10 pA, Ic =O Voltage Icex Collector Cutoff Current 50 50 nA Vee = 30 V, Ven = 3.0 V lat Base Cutoff Current 50 60 nA Vee = 30 V, Vea = 3.0 V hee DC Current Gain (Note 4) 20 40 Ie = 0.1 MA, Voce = 1.0 V 35 70 Io = 1.0 MA, Vee = 1.0 V 50 150 | 100 | 300 Ilo = 10 MA, Vee = 1.0 V 30 ,| 80 Ig =50 mA, Voce = 1.0 V 15 30 lc = 100 mA, Vee = 1.0 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or Jow duty cycle operations. 3. These ratings give a maximum junction temperature of 180C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 6.0 mWP GC); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/ C); (TO-236) junction-to-amblent thermal resistance of 857 C/W (derating factor of 2.8 mW/ C). 4. Pulse conditions: length = 300 ys; duty cycle = 2%. 5. For product family characteristic curves, refer to Curve Set 144. * Package mounted on 99.5% alumina 8 mm x & mm x 0.6 mm. a 3-278By DE Bp 34enb74 0027559 & T . 3469674 FAIRCHILD SEMICONDUCTOR 64D 27559 Dm oo 2N3903/FTSO3903 9N3904/FTSo3904. 7 - 39 -/S ELECTRICAL CHARACTERISTICS (25G Ambient Temperature unless otherwise noted) (Note 5) mmeonpter 3903 3904 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS Vcetea Collector to Emitter Saturation 0.2 0.2 Vv lc =10 mA, lp = 1.0mMA Voltage (Note 4) 0.3 0.3 Vv Ic = 50 mA, ts = 5.0 mA Veeisan Base to Emitter Saturation 0.65 | 0.85 | 0.65} 0.85 Vv le = 10 mA, lp = 1.0mA Voltage (Note 4) 0.95 0.95 Vv Ic = 50 mA, Ip = 5.0 mA Cop Output Capacitance 4.0 4.0 pF Ves = 5.0 V, le =0, f=100 kHz 5 Ci Input Capacitance 8.0 8.0 PF | Vee =0.5 V, fo = 0, f= 100 kHz _ Ate Small Signal Current Gain 50 | 200 | 100 | 400 Ic = 1.0 MA, Vee = 10 V, f= 1.0 kHz hie Input Impedance 1.0 | 80; 1.0 10 kQ Io = 1.0 MA, Voce = 10 V, f = 1.0 kHz Noe Output Admittance 1.0 40 1.0 40 pmho | Ic = 1.0 mA, Vce = 10 V, f = 1,0 kHz Fie Voltage Feedback Ratio 01] 50} 05 | 8&0 | x10 | ic=1.0MA, Vee = 10V, = 1,0 kHz fr Current Gain Bandwidth 250 300 MHz | Ic =10 mA, Vce = 20 V, Product f = 100 MHz ta Turn On Delay Time 35 35 ns lc = 10 MA, Voc = 3.0 V, (test circuit no. 526) lar = 10 MA, Veeiorr = 0.5 V t Rise Time (test circuit no. 526) 35 35 ns Ic = 10 MA, Veo = 3.0 V, ler = 10 MA, Veziorm = 0.5 V ts Storage Time 175 200 ns Ic = 10 MA, Veo = 3.0 V, (test circuit no. 527) lei = lpg = 1.0mA tt Fall Time (test circuit no. 527) 50 50 ns le = 10 MA, Voc = 3.0 V, Ist = tg2 = 1.0 mA NF Noise Figure 6.0 5.0 dB Ic = 100 nA, Vee = 5.0 V, f = 10 Hz to 15.7 kHz, Re = 1.0 kQ 3-279FAIRCHILD SEMICONDUCTOR BY pe i syeqez4 OO275b0 4 i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27560 Ds as 2N3905/FTSO3905 7-37~'5 =a 2N3906/FTSO3906 PNP Small Signal General Purpose Amplifiers & Switches Vceo ... -40 V (Min) PACKAGE hre ... 100-300 @ 10 mA (2N3906) 2N3905 TO-92 NF... 4.0dB (Max) Wide Band (2N3906) 2N3906 TO-92 Coniplements ... 2N3903, 2N3904 - FTSO3905 TO-236AA/AB FTSO3906 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures ; Storage Temperature ~55 C to 150C Operating Junction Temperature 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N FTsO 25 C Ambient Temperature 0.625 W 0.350 W* 70 C Ambient Temperature 0.400 W 25 C Case Temperature 1.0 W Voltages & Currents Vceo Collector to Emitter Voltage -40 V (Note 4) Veso Collector to Base Voltage -40V Veso Emitter to Base Voltage -.0V Ie Collector Current 200 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 3905 3906 SYMBOL }| CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown) 40 ~40 Vv Ig = 1.0 mA, lp = 0 Voltage (Note 5) BYcso Collector to Base Breakdown | 40 40 Vv Ic = 10 wA, le =O Voltage BVeso Emitter to Base Breakdown -5.0 -5.0 Vv le = 10 pA, Ic =O Voltage lcex Collector Cutoff Current 50 50 nA | Vce = 30 V, Ves = -3.0 V let Base Cutoff Current 50 50 nA | Vce = -30V, Ves = -3.0 V ee DC Pulse Current Gain (Note 5) 30 60 Io =0.1 MA, Vee =1.0 V 40 80 Ic = 1.0 MA, Vce = 1.0 V 50 160 | 100 | 300 Io = 10 MA, Vce = -1.0 V 30 60 Ic = 50 mA, Vee = 1.0V 15 30 fc = 100 mA, Vee = -1.0 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (10-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/* C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/* C); (TO-236) junction-to-ambient thermal resistance of 357 CW (derating factor of 28 mW/ C). Rating refers to a high current point where collector to emitter voltage is Jowest. Pulse conditions: length = 300 ys; duty cycle < 2%. For product family characteristic curves, refer to Curve Set T215, Package mounted on 99.5% alumina 8mm x 8mm x 0.6 mm. 4. 5. 6. Ceara a erase neeeeeee eee n cece e eee eee ees eee eee eee reece eee eee eT Ee? 3-280ae pe Bf ayesn74 O0e7Sbl & i FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR B4D 27561 D 2N3905/FTSO3905 2N3906/FTSO3906 7-37_ )s ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 3905 3906 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS Vegan Collector to Emitter Saturation 0.25 -0.25 Vv lc =10 mA, Is = 1.0 mA Voltage (Note 5) 0.4 -0.4 4 Ic = 50 MA, le = 5.0 mA Vegan Base to Emitter Saturation 0.65) 0.85 | -0.65; -0.85 Vv lc = 10 mA, Ie = 1.0 mA Voltage (Note 5) 0.95 0.95 Vv Ic = 50 mA, is = 5.0 mA Co Output Capacitance 4.5 4.5 PF | Vee =-5.0V, le =0, f=100kHz Cw Input Capacitance 10 10 pF Ves = 0.5 V, Ic =0, f= 100kHz Kite Small Signal Current Gain 50 | 200 | 100 | 400 lc = 1.0 MA, Vee = -10 V, f= 1.0 kHz Hie Input Impedance 0.5 8.0 2.0 10 kQ Ic = 1.0 MA, Vez = -10 V, = 1.0 kHz Nos Output Admittance 1.0 40 3.0 60 nmho | lc = 1.0 mA, Vce = -10 V, f = 1.0 kHz te Voltage Feedback Ratio 0.1 5.0 0.1 10 x107 | lo = 1.0 mA, Vce = -10V, f = 1.0 kHz fr Current Gain Bandwidth 200 250 MHz | lc =10 MA, Voce = -20 Vv, Product f = 100 MHz ta Turn On Delay Time 35 35 ns Ilo = 10 MA, fa: = 1.0 mA, (test circuit no. 333) Vec = -3.0 V tr Rise Time (test circuit no. 333) 35 35 ns le = 10 MA, le: = 1.0 mA, Vee = -3.0 V ts Storage Time 200 225 ns Ic = 10 MA, lai = 1.0 mA, (test circuit no. 239) laz = 1.0 MA, Veco = -3.0 V t Fail Time (test circuit no. 239) 60 75 ns lc = 10 mA, Is; = 1.0 mA, lao = -1.0 mA, Vee = -3.0 V NF Wide Band Noise Figure 5.0 4.0 dB lo = 100 pA, Vee = -5.0 V Rs = 1.0 kf, f= 10 Hz to 15.7 kHz