Document Number: 83722 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 10-Dec-08 673
Optocoupler, Phototransistor Output, AC Input, Low Input Current
SFH628A, SFH6286
Vishay Semiconductors
DESCRIPTION
The SFH628A (DIP) and SFH6286 (SMD) feature a high
current transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infrared
emitting diode, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 or SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of > 8.0 mm are achieved
with option 6. This version complies with IEC 60950
(DIN VDE 0805) for reinforced insulation to an operation
voltage of 400 VRMS or DC.
FEATURES
• High common mode interference immunity
• Isolation test voltage, 5300 VRMS
• Low coupling capacitance
• Good CTR linearity depending on forward
current
• Low CTR degradation
• High collector emitter voltage, VCEO = 55 V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• Telecom
• Industrial controls
• Battery powered equipment
• Office machines
AGENCY APPROVALS
• UL1577, file no. E52744 system code J
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI IEC 60950; IEC 60065
Note
For additional information on the available options refer to option information.
i179080
1
1
E
C
A/C
C/A
1
2
4
3
ORDER INFORMATION
PART REMARKS
SFH628A-2 CTR 63 % to 200 %, DIP-4
SFH628A-3 CTR 100 % to 320 %, DIP-4
SFH628A-4 CTR 160 % to 500 %, DIP-4
SFH6286-2 CTR 63 % to 200 %, SMD-4
SFH6286-3 CTR 100 % to 320 %, SMD-4
SFH6286-4 CTR 160 % to 500 %, SMD-4
SFH628A-2X006 CTR 63 % to 200 %, DIP-4 400 mil (option 6)
SFH628A-3X006 CTR 100 % to 320 %, DIP-4 400 mil (option 6)
SFH628A-3X007 CTR 100 % to 320 %, SMD-4 (option 7)
SFH628A-4X006 CTR 160 % to 500 %, DIP-4 400 mil (option 6)
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current IF± 50 mA
Surge forward current t ≤ 10 µs IFSM ± 2.5 A
Power dissipation Pdiss 76 mW
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83722
674 Rev. 1.7, 10-Dec-08
SFH628A, SFH6286
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input, Low Input Current
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter voltage VCE 55 V
Emitter collector voltage VEC 7V
Collector current IC50 mA
tp ≤ 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Insulation thickness between
emitter and detector ≥ 0.4 mm
Comparative tracking index per DIN IEC112/
VDE 0303 part 1 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature range Tstg - 55 to + 150 °C
Ambient temperature range Tamb - 55 to +100 °C
Soldering temperature (2) max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm Tsld 260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 5 mA VF1.1 1.5 V
Capacitance VR = 0 V, f = 1 MHz CO45 pF
Thermal resistance Rthja 1070 K/W
OUTPUT
Collector emitter leakage current VCE = 10 V ICEO 10 200 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 7pF
Thermal resistance Rthja 500 K/W
COUPLER
Collector emitter saturation
voltage
IF = ± 1 mA, IC = 0.5 mA SFH628A-2 VCEsat 0.25 0.4 V
SFH6286-2 VCEsat 0.25 0.4 V
IF = ± 1 mA, IC = 0.8 mA SFH628A-3 VCEsat 0.25 0.4 V
SFH6286-3 VCEsat 0.25 0.4 V
IF = ± 1 mA, IC = 1.25 mA SFH628A-4 VCEsat 0.25 0.4 V
SFH6286-4 VCEsat 0.25 0.4 V
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Document Number: 83722 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 10-Dec-08 675
SFH628A, SFH6286
Optocoupler, Phototransistor Output,
AC Input, Low Input Current Vishay Semiconductors
Fig. 1 - Test Circuit Fig. 2 - Test Circuit and Waveforms
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
IF = ± 1.0 mA, VCE = 0.5 V SFH628A-2 CTR 63 200 %
SFH6286-2 CTR 63 200 %
IF = ± 0.5 mA, VCE = 1.5 V SFH628A-2 CTR 32 100 %
SFH6286-2 CTR 32 100 %
IF = ± 1 mA, VCE = 0.5 V SFH628A-3 CTR 100 320 %
SFH6286-3 CTR 100 320 %
IF = ± 0.5 mA, VCE = 1.5 V SFH628A-3 CTR 50 160 %
SFH6286-3 CTR 50 160 %
IF = ± 1 mA, VCE = 0.5 V SFH628A-4 CTR 160 500 %
SFH6286-4 CTR 160 500 %
IF = ± 0.5 mA, VCE = 1.5 V SFH628A-4 CTR 80 250 %
SFH6286-4 CTR 80 250 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time VCC = 5 V, IC = 2 mA, RL = 100 Ωton 6µs
Rise time VCC = 5 V, IC = 2 mA, RL = 100 Ωtr3.5 µs
Turn-off time VCC = 5 V, IC = 2 mA, RL = 100 Ωtoff 5.5 µs
Fall time VCC = 5 V, IC = 2 mA, RL = 100 Ωtf5µs
isfh618a_11
±IF
47 Ω
RL
IC
VCC
isfh618a_12
10 %
90 %
Inputpulse
Outputpulse
tr
ton
tf
toff
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1) 55/100/21
Comparative tracking index CTI 175 399
VIOTM 10000 V
VIORM 890 V
PSO 400 mW
ISI 275 mA
TSI 175 °C
Creepage distance standard DIP-8 7 mm
Clearance distance standard DIP-8 7 mm
Creepage distance 400 mil DIP-8 8 mm
Clearance distance 400 mil DIP-8 8 mm
Insulation thickness,
reinforced rated per IEC 60950 2.10.5.1 0.4 mm
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83722
676 Rev. 1.7, 10-Dec-08
SFH628A, SFH6286
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input, Low Input Current
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Current Transfer Ratio (typ.)
Fig. 4 - Current Transfer Ratio (typ.)
Fig. 5 - Diode Forward Voltage (typ.)
Fig. 6 - Diode Forward Voltage (typ.)
Fig. 7 - Transistor Capacitance
Fig. 8 - Output Characteristics
240
280
%
200
160
- 40 - 20 0 20 40 60 ºC
100
isfh618a_01
T
A
120
80
40
0
CTR
IF = 5mA
IF = 1mA
IF = 2mA
IF = 0.5mA
VCE = 0.5 V, CTR = f (TA)
240
280
%
200
160
- 40 - 20 0 20 40 60 ºC
100
isfh618a_02
TA
120
80
40
0
CTR
IF = 5mA
IF = 1mA
IF = 2mA
IF = 0.5mA
1.15
1.2
V
1.1
1.05
mA
isfh618a_03
IF
1
0.95
0.9
Vr
TA = 25 ºC, VF = f (IF)
10-1 100101
1.15
1.2
V
1.1
- 40 - 20 0 20 40 60 ºC
100
isfh618a_04
T
A
1.05
1
0.95
0
VF
IF = 1.0 mA, VF = f (TA)
16
20
pF
12
V
isfh618a_05
V
CE
8
4
0
C
CE
TA = 25 ºC, f = 1.0 MHz
CEE = f (VCE)
10-1 100101102
10-2
10
12
mA
8
V
isfh618a_06
V
CE
6
4
2
0
I
CE
TA = 25 ºC,
CE = f
(VCE, IF)
10
-1
10
0
10
1
10
2
10
-2
IF = 5 mA
IF = 2 mA
IF = 1 mA
IF = 0.5 mA
OHOO2119
Document Number: 83722 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 10-Dec-08 677
SFH628A, SFH6286
Optocoupler, Phototransistor Output,
AC Input, Low Input Current Vishay Semiconductors
Fig. 9 - Permissible Forward Current Diode
Fig. 10 - Permissible Power Dissipation
Fig. 11 - Switching Times (Typ.)
PACKAGE DIMENSIONS in inches (millimeters)
100
mA
75
0255075ºC
100
isfh618a_07
TA
50
25
0
/FIF = f (TA)
200
mW
150
125
175
0255075ºC
100
isfh618a_08
TA
100
25
75
50
0
Ptot
Ptot = f (TA)
Transistor
Diode
103
102
101
100
Ω
isfh618a_09
RL
t
103104105
102
μ5
tF
t off
tR
t on
TA = 25 ºC, IF = 1.0 mA,
VCC = 5.0 V, tON, tR,
tOFF, tF, = f (RL)
i178027
0.255 (6.48)
0.268 (6.81)
1
2
4
3
0.179 (4.55)
0.190 (4.83)
Pin one ID
0.030 (0.76)
0.045 (1.14)
4°
typ.
0.100 (2.54)
0.130 (3.30)
0.150 (3.81)
0.020 (0.508)
0.035 (0.89)
10°
3° to 9°
0.018 (0.46)
0.022 (0.56)
0.008 (0.20)
0.012 (0.30)
0.031 (0.79) typ.
0.050 (1.27) typ.
0.300 (7.62) typ.
0.110 (2.79)
0.130 (3.30)
0.230 (5.84)
0.250 (6.35)
0.050 (1.27)
ISO method A
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83722
678 Rev. 1.7, 10-Dec-08
SFH628A, SFH6286
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input, Low Input Current
i178029
0.255 (6.48)
0.268(6.81)
3 4
0.179 (4.55)
0.190 (4.83)
Pin one ID
0.030 (0.76)
0.045 (1.14)
4° typ.
1.00 (2.54) typ.
0.130 (3.30)
0.150 (3.81)
0.0098(0.249)
0.035 (0.102)
0.020 (0.508)
0.040 (1.02)
0.031 (0.79)
typ.
0.050 (1.27)
typ.
0.010 (0.25)
typ.
10 °
3° to 7°
0.375 (9.52)
0.395 (10.03)
0.296 (7.52)
0.312 (7.90)
0.315 (8.00)
min.
Lead
coplanarity
0.004 max.
SMD
ISO method A
0.100 (2.54) R 0.010 (0.25)
0.070 (1.78)
0.030 (0.76)
0.315 (8.00) min. 0.060 (1.52)
0.435 (11.05)
0.407 (10.36)
0.391 (9.96)
Optio n6
min.
0.300 (7.62)
typ.
min.
max.
0.028 (0.7)
Option 7
18450-1
0.307 (7.8)
0.291 (7.4)
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
0.331 (8.4)
0.406 (10.3)
Document Number: 83722 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 10-Dec-08 679
SFH628A, SFH6286
Optocoupler, Phototransistor Output,
AC Input, Low Input Current Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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