General Description Features MagnaChip's IGBT Module 7DM-3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are ideally suited for IH, High BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.8V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10us at TC=100 Isolation Type Package Applications Power inverters, Motors drives and other Induction Heating, Motor Drives, High Power Inverters Welding Machine, UPS applications where switching losses are significant portion of the total losses. 7DM-3 Equivalent Circuit E301932 Absolute Maximum Ratings @Tc = 25oC (Per Leg) Characteristics Symbol Rating Unit Collector-Emitter Voltage VCES 1200 V Gate- Voltage VGES 20 V 275 A 200 A ICM 200 A IF 200 A IFM 400 A PD 1136 W TSC 10 us Operating Junction Temperature Tj -55~150 o Storage Temperature Range Tstg -55~125 o Viso 2500 V - 4 N.m TC=25oC Continuous Collector Current o IC TC=80 C Pulsed Collector Current(1) Diode Continuous Forward Current TC=80oC Diode Maximum Forward Current Power Dissipation TC=25oC Short Circuit Withstand Time Isolation Voltage AC 1minute Mounting screw Torque : M6 C C Note : (1) Repetitive rating : Pulse width limited by max. junction temperature March 2013.Version 3.0 1 MagnaChip Semiconductor Ltd. MPMD200B120RH NPT & Rugged Type 1200V IGBT Module MPMD200B120RH NPT & Rugged Type 1200V IGBT Module Characteristics Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0V 1200 - - Gate Threshold Voltage VGE(th) VCE = VGE, IC = 2mA 4.5 - 6.5 Collector Cut-Off Current ICES VCE = 1200V, VGE = 0V - - 2 mA Gate Leakage Current IGES VGE = 20V, VCE = 0V - - 500 nA TC=25 - 2.8 3.3 V TC=100 - 3.4 - V - 790 - - 100 - V Collector-Emitter saturation voltage VCE(sat) VGE = 15V, IC=200A Dynamic Characteristics Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 470 - Input Capacitance Cies - 8876 - Output Capacitance Coes - 977 - Reverse Transfer Capacitance Cres - 330 -- Turn-On Delay Time td(on) - 135 - tr - 60 - VCC = 600V, IC =200A, - 450 - VGE =15V, - 70 - RG = 4.7, Inductive Load - 11.0 - mJ Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC = 600V, IC = 200A, VGE = 15V VCE = 30V, VGE = 0V, f = 1.0MHz nC pF ns Turn on Switching Loss Eon Turn off Switching Loss Eoff - 8.0 - mJ Total Switching Loss Ets - 19.0 - mJ Short Circuit Withstand Time Tsc 10 - - us TC=25 - 2.9 3.5 TC=100 - 2.3 - TC=25 - 130 - Vcc = 600V, VGE = 15V RG = 4.7 @ Tc = 100 Electrical Characteristics of FRD @Ta =25oC(unless otherwise specified) Diode Forward Voltage Diode Reverse Recovery Time VFM IF=200A V trr ns 250 TC=100 Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr March 2013.Version 3.0 IF =20A, VR=600V, di/dt = -400A/us TC=25 - 8 - TC=100 - 18 - TC=25 - 520 - TC=100 - 2250 - A nC 2 MagnaChip Semiconductor Ltd. MPMD200B120RH NPT & Rugged Type 1200V IGBT Module Electrical Characteristics of IGBT @TC =25oC(unless otherwise specified) Characteristics Symbol Min. Typ. Max. Unit Junction-to-Case(IGBT Part) RJC - - 0.11 /W Junction-to-Case(DIODE Part) RJC - - 0.2 /W Case-to-Sink ( Conductive grease applied) RCS 0.05 - - /W Weight - - 360 g Weight of Module March 2013.Version 3.0 3 MagnaChip Semiconductor Ltd. MPMD200B120RH NPT & Rugged Type 1200V IGBT Module Thermal Characteristics and Weight 300 Common Emitter TC=25 20V 15V 200 10V 12V 150 100 8V 50 200 150 8V 100 50 0 0 1 2 3 4 5 0 6 0 1 Collector-Emitter Voltage, VCE[V] 300 5 6 VCE=600V,IC=200A TC=25 Gate-Emitter Voltage, V GE[V] 14 150 100 50 0 12 10 8 6 4 2 0 0 1 2 3 4 5 6 0 100 200 Collector-Emitter Voltage,V CE[V] 300 400 500 600 700 800 Gate Charge, Qg[nC] Fig.3 Typical Saturation Voltage Characteristics Fig.4 Gate Charge Characteristics 35 Eon(TC=25) Eon(TC=125) 25 4 16 200 30 3 Fig.2 Typical Output Characteristics TC=25 TC=125 250 2 Collector - Emitter Voltage,VCE[V] Fig.1 Typical Output Characteristics Collector Current,IC[A] 20V 15V 12V 10V Common Emitter TC=125 250 Collector Current,IC[A] Collector Current, IC[A] 250 Eoff(TC=25) Eoff(TC=125) 30 25 Eoff[mJ] Eon[mJ] 20 15 10 20 15 10 5 5 0 0 0 5 10 15 20 25 0 30 10 15 20 25 30 RG[ ] RG[ ] Fig.5 Typical turn-on energy = f(RG) VGE = 15V, IC = 200A, VCE = 600V March 2013.Version 3.0 5 Fig.6 Typical turn-off energy = f(RG) VGE = 15V, IC = 200A, VCE = 600V 4 MagnaChip Semiconductor Ltd. MPMD200B120RH NPT & Rugged Type 1200V IGBT Module 300 1400 TJ = 150 VGE 15V 320 TJ 150 PD=f(TC) 1200 Power Dissipation[W] Collector Current,IC[A] 280 240 200 160 120 80 1000 800 600 400 200 40 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 Case Temperatute, Tc[] Fig.7 Rated Current vs. Case Temperature 300 140 160 TC=25 TC=125 250 FRD Forward Current, IF[A] Thermal Response Zthjc[/W] 120 Fig.8 Power Dissipation vs. Case Temperature 1 0.1 100 TC[] IGBT 0.01 1E-3 200 150 100 50 1E-4 1E-5 TC=25 0 1E-4 1E-3 0.01 0.1 1 10 0 Rectangular Pulse Duration Time[sec] 2 3 4 Forward Drop Voltage, VF[V] Fig.9 Transient Thermal Impedance March 2013.Version 3.0 1 Fig.10 Forward Characteristics 5 MagnaChip Semiconductor Ltd. 5 MPMD200B120RH NPT & Rugged Type 1200V IGBT Module 360 7DM-3 Dimensions are in millimeters, unless otherwise specified March 2013.Version 3.0 6 MagnaChip Semiconductor Ltd. MPMD200B120RH NPT & Rugged Type 1200V IGBT Module Package Dimension MPMD200B120RH NPT & Rugged Type 1200V IGBT Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. March 2013.Version 3.0 7 MagnaChip Semiconductor Ltd.