THERMAL DATA
TO220 ISOWATT220
Rthj-case Thermal Resistance Junction-case Max 1.67 3.57 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 2.8 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =50V) 42 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tjmax, δ <1%) 1.6 mJ
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc=100o
C, pulse width limited by Tjmax, δ <1%) 1.8 A
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID= 250 µAV
GS = 0 500 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRatingx0.8 T
c= 125 oC250
1000 µA
µA
IGSS Gate-Source Leakage
Current (VDS =0) V
GS =± 30 V 100 mA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID = 250 µA2.2533.75V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D=1.4A
V
GS =10V I
D=1.4A T
c= 100oC3.25 4
8Ω
Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10 V 2.8 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=1.4A 0.8 2 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 300
55
15
400
70
20
pF
pF
pF
STP2NA50/FI
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