MJE350 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . designed for use in line–operated applications such as low power, line–operated

series pass and switching regulators requiring PNP capability.

•High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc

•Excellent DC Current Gain —

hFE = 30–240 @ IC = 50 mAdc

•Plastic Thermopad Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

300

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

3.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

500

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.16

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎÎ

6.25

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 1.0 mAdc, IB = 0)

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

300

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 300 Vdc, IE = 0)

ÎÎÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

ÎÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎÎÎ

240

ÎÎÎÎ

—



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE350/D

 Motorola, Inc. 1995



0.5 AMPERE

POWER TRANSISTOR

PNP SILICON

300 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

MJE350

2 Motorola Bipolar Power Transistor Device Data

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

200

7.0 205.0

10 10 50 10030

TJ = 150

–55

Figure 1. DC Current Gain

100

200 50030070

VCE = 2.0 V

VCC = 10 V

Figure 2. “On” Voltages

1.0

IC, COLLECTOR CURRENT (mA)

0.8

0.2

TJ = 25

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

VBE @ VCE = 10 V0.6

0.4

VCE(sat)

7.0 205.0 10 50 10030 200 50030070

IC/IB = 10

IC/IB = 5.0

1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

300

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

SECOND BREAKDOWN LIMITED

Figure 3. Active–Region Safe Operating Area

1.0 ms

700

2001005020

TJ = 150

IC, COLLECTOR CURRENT (mA)

100

300

500

100

40030 70

200

500

+1.2

IC, COLLECTOR CURRENT (mA)

Figure 4. Temperature Coefficients

5030105.0 5007.0 20

+0.8

+0.4

–0.4

–0.8

–1.2

–1.6

–2.0

–2.4

–2.8 100 200 300

*APPLIES FOR IC/IB < hFE/4

VC for VCE(sat)

VB for VBE

+100

C to +150

+25

C to +100

–55

C to +25

+25

C to +150

–55

C to +25

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 3 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

TC, CASE TEMPERATURE (

Figure 5. Power Derating

10080400 16020 60

8.0

4.0

0120 140

PD, POWER DISSIPATION (WATTS)

MJE350

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

MJE350

4 Motorola Bipolar Power Transistor Device Data

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MJE350/D

*MJE350/D*

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