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DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 26 2004 Dec 13
DISCRETE SEMICONDUCTORS
BSR30; BSR31; BSR33
PNP medium power transistors
db
ook, halfpage
M3D109
2004 Dec 13 2
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
Telephony and general industrial applications
Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic package.
NPN complements: BSR40; BSR41 and BSR43.
PINNING
PIN DESCRIPTION
1emitter
2collector
3base
321
sym07
9
1
2
3
Fig.1 Simplified outline (SOT89 ) and symbo l .
MARKING
TYPE NUMBER MARKING CODE
BSR30 BR1
BSR31 BR2
BSR33 BR4
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BSR30 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
BSR31
BSR33
2004 Dec 13 3
NXP Semiconductors Pr oduct data sheet
PNP medium power transistors BSR30; BSR31; BSR33
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BSR30; BSR31 70 V
BSR33 90 V
VCEO collector-emitter voltage open base
BSR30; BSR31 60 V
BSR33 80 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 1 A
ICM peak collector current 2 A
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 1.35 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 93 K/W
Rth(j-s) thermal resistance from junction to soldering point 13 K/W
2004 Dec 13 4
NXP Semiconductors Pr oduct data sheet
PNP medium power transistors BSR30; BSR31; BSR33
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp = 300 μs; δ < 0.01.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current IE = 0 A; VCB = 60 V 100 nA
IE = 0 A; VCB = 60 V; Tj = 150 °C 50 μA
IEBO emitter-base cu t-off current IC = 0 A; VEB = 5 V 100 nA
hFE DC current gain IC = 100 μA; VCE = 5 V; note 1
BSR30 10
BSR31; BSR33 30
DC current gain IC = 100 mA; VCE = 5 V; note 1
BSR30 40 120
BSR31; BSR33 100 300
DC current gain IC = 500 mA; VCE = 5 V; note 1
BSR30 30
BSR31; BSR33 50
VCEsat collector-emitter saturation
voltage IC = 150 mA; IB = 15 mA; note 1 0.25 V
IC = 500 mA; IB = 50 mA; note 1 0.5 V
VBEsat base-emitt er saturation voltage IC = 150 mA; IB = 15 mA; note 1 1 V
IC = 500 mA; IB = 50 mA; note 1 1.2 V
fTtransition freque ncy IC = 50 mA; VCE = 10 V;
f = 100 MHz 100 MHz
2004 Dec 13 5
NXP Semiconductors Pr oduct data sheet
PNP medium power transistors BSR30; BSR31; BSR33
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Dec 13 6
NXP Semiconductors Pr oduct data sheet
PNP medium power transistors BSR30; BSR31; BSR33
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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General Information in this document is believed to be
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part of any q uotation or contra ct, is b elieve d to be accurate and reliable and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp7 Dat e of release: 2004 Dec 13 Document orde r number: 9397 750 13873