NTE5442 thru NTE5448
Silicon Controlled Rectifier (SCR)
8 Amp, TO127
Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-
signed for high−volume consumer phase−control applications such as motor speed, temperature,
and light controls, and for fast switching applications in ignition and starting systems, voltage regula-
tors, vending machines, and lamp drivers.
Features:
DSmall, Rugged Construction
DPractical Level Triggering and Holding Characteristics @ +25°C:
IGT = 7mA Typ
IHold = 6mA Typ
DLow “ON” Voltage: VTM = 1V Typ @ 5A @ +25°C
DHigh Surge Current Rating: ITSM = 80A
Absolute Maximum Ratings: (Note 1, TJ = +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM
NTE5442 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5444 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5446 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5448 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non−Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), VRSM
NTE5442 75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5444 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5446 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5448 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On−State Current (All Conduction Angles), IT(RMS) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average On−State Current (TC = +73°C), IT(AV) 5.1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Non−Repetitive Surge Current, ITSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) 80A. . . . . . . . . . . . . .
Circuit Fusing (TJ = −40° to +100°C, t = 1ms to 8.3ms), I2t 25A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, PGM 5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current, IGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, VRGM 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ−40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction−to−Case, RthJC 2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction−to−Ambient, RthJA 40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. NTE5446 is a discontinued device and is replaced by NTE5448.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied
concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in
a manner that the voltage applied exceeds the rated blocking voltage.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse
Blocking Current
IDRM,
IRRM
Rated VDRM or VRRM,
Gate Open
TJ = +25°C− − 10 μA
TJ= +100°C− − 2 mA
Gate Trigger Current
(Continuous DC)
IGT VD = 7V, RL = 100ΩTC = +25°C−7 30 mA
TC = −40°C− − 60 mA
Gate Trigger Voltage
(Continuous DC)
VGT VD = 7V, RL = 100ΩTC = +25°C−0.75 1.5 V
TC = −40°C− − 2.5 V
VD = Rated VDRM, RL = 100Ω, TJ = +100°C 0.2 − − V
Peak On−State Voltage VTM Pulse Width = 1ms to 2 ms,
Duty Cycle ≤ 2%
ITM = 5Apeak −1.0 1.5 V
ITM = 15.7Apeak − − 2.0 V
Holding Current IHold VD = 7V, Gate Open TC = +25°C−6 40 mA
TC = −40°C− − 70 mA
Gate Controlled Turn−On Time tgt ITM = 5A, IGT = 20mA, VD = Rated VDRM −1−μs
Circuit Commutated Turn−Off
Time
tqITM = 5A, IR = 5A −15 −μs
TJ= +100°C−20 −μs
Critical Rate−of−Rise of
Off−State Voltage
dv/dt VD = Rated VDRM, Exponential Waveform,
TJ = +100°C, Gate Open
−50 −V/μs
.530 (13.4) Max
.668
(17.0)
Max
.655
(16.6)
Max
.166 (4.23)
.150 (3.82) MaxHeat Sink Contact
Area (Bottom)
.143 (3.65) Dia Thru
A (Heat Sink Area)
KG
