MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES A High breakdown voltage (BVCEO 40V) A High-current driving (Ic(max) = 400mA) A With clamping diodes A Driving available with PMOS IC output A Wide operating temperature range (Ta = -20 to +75C) PIN CONFIGURATION INPUT IN1 1 18 O1 IN2 2 17 O2 IN3 3 16 O3 IN4 4 15 O4 IN5 5 14 O5 IN6 6 13 O6 IN7 7 12 O7 IN8 8 11 O8 GND 10 COM COMMON FUNCTION The M54522P and M54522FP each have eight circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54522FP is enclosed in a molded small flat package, enabling space-saving design. OUTPUT 9 Package type 18P4G(P) NC APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems INPUT 1 20 NC IN1 2 19 O1 IN2 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 IN7 8 13 O7 IN8 9 12 O8 GND 11 COM COMMON OUTPUT 10 Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM COM OUTPUT 20K INPUT 20K 2K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = -20 ~ +75 C) Symbol VCEO Parameter Collector-emitter voltage IC VI Collector current Input voltage IF VR Clamping diode forward current Clamping diode reverse voltage Pd Topr Power dissipation Tstg Conditions Ta = 25C, when mounted on board RECOMMENDED OPERATING CONDITIONS VO IC VIH "H" input voltage VIL "L" input voltage 400 -0.5 ~ +40 mA V 400 40 mA V 1.79(P)/1.10(FP) -20 ~ +75 W C -55 ~ +125 C (Unless otherwise noted, Ta = -20 ~ +75C) Limits Parameter Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) Unit V Current per circuit output, L Operating temperature Storage temperature Symbol Ratings -0.5 ~ +40 Output, H min 0 typ -- max 40 0 -- 400 200 Duty Cycle P : no more than 7% FP : no more than 5% Duty Cycle P : no more than 30% FP : no more than 20% IC 400mA 0 -- 8 -- IC 200mA 4 -- -- ELECTRICAL CHARACTERISTICS Unit V mA 0 30 V 0.5 V (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage Test conditions ICEO = 100A VI = 8V, I C = 400mA VCE (sat) Collector-emitter saturation voltage II VF Input current Clamping diode forward voltage IF = 400mA IR h FE Clamping diode reverse current DC amplification factor VR = 40V VCE = 4V, IC = 300mA, Ta = 25C VI = 4V, I C = 200mA VI = 17V Limits Unit min 40 typ+ -- max -- -- 1.15 2.4 -- 0.95 1.6 0.3 -- 0.85 1.5 1.8 2.4 -- -- 100 V A 1000 8000 -- -- V V mA + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time Test conditions CL = 15pF (note 1) Limits min typ max -- 30 -- -- 930 -- Unit ns ns Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50 CL 50% 50% ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VIN = 0 to 8V (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 2.0 VI = 4V Collector current Ic (mA) Power dissipation Pd (W) M54522P 1.5 M54522FP 1.0 0.5 400 300 200 Ta = 25C 100 Ta = 75C 0 0 25 50 75 0 100 1.0 1.5 2.0 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54522P) Duty-Cycle-Collector Characteristics (M54522P) 500 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) Collector current Ic (mA) 0.5 Ambient temperature Ta (C) 500 0 Ta = -20C 0 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 100 0 0 20 40 60 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty-Cycle-Collector Characteristics (M54522FP) Duty-Cycle-Collector Characteristics (M54522FP) 500 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 500 400 200 0 20 40 Duty cycle (%) 80 100 Grounded Emitter Transfer Characteristics 105 400 7 5 VCE = 4V VCE = 4V Ta = 25C 3 2 104 Ta = 75C 7 5 3 2 Ta = -20C 103 7 5 Collector current Ic (mA) DC amplification factor hFE *Ta = 75C 60 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 300 200 Ta = 75C 100 Ta = 25C 3 2 Ta = -20C 102 0 10 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 0 0 Collector current Ic (mA) 1 2 3 4 Input voltage VI (V) Clamping Diode Characteristics Input Characteristics 400 1.5 Ta = -20C 1.0 Ta = 25C Ta = 75C 0.5 Forward bias current IF (mA) 2.0 Input current II (mA) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 100 0 100 300 300 200 100 Ta = 25C Ta = 75C Ta = -20C 0 0 5 10 15 Input voltage VI (V) 20 25 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999