Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
CIRCUIT DIAGRAM
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
→COM COMMON
→O8
IN8→
GND
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
→O7
→O6
→O5
→O4
→O3
→O2
→O1
1NC
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
COMMON
→O8
IN7→
IN8→
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
→COM
GND 10 11
→O7
→O6
→O5
→O4
→O2
→O3
→O1
NC
NC : No connection
Package type 18P4G(P)
INPUT OUTPUT
INPUT OUTPUT
Package type 20P2N-A(FP)
20K
2K
20K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
The eight circuits share the COM and GND.
DESCRIPTION
M54522P and M54522FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
ÁHigh breakdown voltage (BVCEO ≥ 40V)
ÁHigh-current driving (Ic(max) = 400mA)
ÁWith clamping diodes
ÁDriving available with PMOS IC output
ÁWide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and interfaces between microcom-
puter output and high-current or high-voltage systems
FUNCTION
The M54522P and M54522FP each have eight circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20kΩ between input transistor bases and input pins.
A spike-killer clamping diode is provided between each out-
put pin (collector) and COM pin. The output transistor emit-
ters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54522FP is enclosed in a molded small flat package,
enabling space-saving design.
Aug. 1999
Collector-emitter breakdown voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
VO
VIL
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +40
400
–0.5 ~ +40
400
40
1.79(P)/1.10(FP)
–20 ~ +75
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
V
V
Parameter
—
—
—
—
0
8
4
0
40
0.5
Limits
min typ max
Symbol Unit
0
0
—
—
400
200
30
mA
V
V
mA
V
µA
—
40
—
—
0.3
—
—
1000
—
1.15
0.95
0.85
1.5
—
8000
—
2.4
1.6
1.8
2.4
100
—
Symbol UnitParameter Test conditions Limits
min typ+max
V
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
—
—30
930 —
—
Symbol UnitParameter Test conditions Limits
min typ max
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
IC
VIH
Output voltage
“H” input voltage
“L” input voltage
IC≤400mA
IC≤200mA
Duty Cycle
P : no more than 30%
FP : no more than 20%
Duty Cycle
P : no more than 7%
FP : no more than 5%
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
V
(BR) CEO
II
VF
IR
hFE
Collector-emitter saturation voltage
VCE (sat)
ICEO = 100µA
VI = 8V, IC = 400mA
VI = 4V, IC = 200mA
VI = 17V
IF = 400mA
VR = 40V
VCE = 4V, IC = 300mA, Ta = 25°C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
Aug. 1999
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
PG
50ΩC
L
Measured device
OPEN
V
O
R
L
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
IN
= 0 to 8V
(2) Input-output conditions : R
L
= 25Ω, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54522FP
M54522P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
0
200
100
300
V
I
= 4V
Ta = –20°C
Ta = 25°C
Ta = 75°C
400
500
0.5 1.0 1.5 2.0
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54522P)
Duty cycle (%)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
0
0
100
200
300
400
500
➀
➁
➂
➃
➄
➆➅
➇
20 40 60 80 100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54522P)
Duty cycle (%)
0
0
100
200
300
400
500
➀
➁
➃
➄
➆➅
➇
➂
20 40 60 80 100
Collector current Ic (mA)
TYPICAL CHARACTERISTICS
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Collector Characteristics
(M54522FP)
Duty cycle (%)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0
100
200
300
400
500
➀
➁
➂
➃
➄
➆➅
➇
20 40 60 80 100
Collector current Ic (mA)
•The collector current values
represent the current per circuit.
•Repeated frequency
≥ 1
0Hz
•The value in the circle represents the
value of the simultaneously-operated circuit. •Ta = 75°C
Duty-Cycle-Collector Characteristics
(M54522FP)
Duty cycle (%)
0
0
100
200
300
400
500
➀
➁
➃
➄
➆➅
➇
➂
20 40 60 80 100
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
100103
VCE = 4V
Ta = 25°C
Ta = 75°C
Ta = –20°C
5
3
2
7
5
3
2
7
105
104
5
3
2
7
103
10223 57102
23 57101
23 57
DC amplification factor hFE
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
0
VCE = 4V
Ta = 25°C
Ta = 75°C
Ta = –20°C
100
200
300
400
01234
Collector current Ic (mA)
Input Characteristics
Input voltage VI (V)
0
Ta = 25°C
Ta = 75°C
Ta = –20°C
0.5
1.0
1.5
2.0
05 10152025
Input current II (mA)
Clamping Diode Characteristics
Forward bias voltage VF (V)
0
0
100
200
Ta = –20°C
Ta = 25°C
Ta = 75°C
300
400
0.5 1.0 1.5 2.0
Forward bias current IF (mA)
