SEMICONDUCTOR BCW69/70/89 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES 2 H A 3 G For Complementary with NPN Type BCW71/72, BCV71. 1 P Collector-Base BCW69/70 Voltage BCW89 -60 Collector-Emitter BCW69/70 -45 Voltage BCW89 UNIT J RATING K -50 VCBO P N SYMBOL C MAXIMUM RATING (Ta=25) CHARACTERISTIC D Super Mini Packaged Transistors for Hybrid circuits. DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M V 1. EMITTER VCEO 2. BASE V -60 VEBO -5 V IC -100 mA IE Emitter Current 100 * : Package Mounted On 99.9% Alumina 10x8x0.6mm. PC Collector Power Dissipation 200 mA Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range 3. COLLECTOR SOT-23 mW Tj 150 Tstg -65150 MARK SPEC Marking TYPE MARK BCW69 H1 BCW70 H2 BCW89 H5 1998. 6. 15 Revision No : 1 Lot No. Type Name 1/2 BCW69/70/89 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Collector-Emitter BCW69/70 Breakdown Voltage BCW89 Collector-Base BCW69/70 Breakdown Voltage BCW89 Collector-Emitter BCW69/70 Breakdown Voltage BCW89 SYMBOL V(BR)CEO V(BR)CBO V(BR)CES Emitter-Base Breakdown Voltage V(BR)EBO TEST CONDITION MIN. TYP. MAX. -45 - - -60 - - -50 - - -60 - - -50 - - -60 - - -5.0 - - V VCB=-20V, IE=0 - - -100 nA Ta=100, VCB=-20V, IE=0 - - -10 A - 90 - - 150 - 120 - 260 215 - 500 -600 - -750 IC=-10mA, IB=-0.5mA - -720 - IC=-50mA, IB=-2.5mA - -810 - IC=-10mA, IB=-0.5mA - - -300 IC=-50mA, IB=-2.5mA - -180 - IC=-10mA, VCE=-5V, f=100MHz - 150 - MHz VCB=-10V, IE=0, f=1MHz - - 7.0 pF - - 10 dB IC=-2mA, IB=0 V IC=-10A, IE=0 V IC=-10A, VBE=0 IE=10A, IC=0 V ICBO Collector Cut-off Current BCW69/89 UNIT VCE=-5V, IC=-10A BCW70 hFE DC Current Gain BCW69/89 VCE=-5V, IC=-2mA BCW70 Base-Emitter Voltage VBE(ON) Base-Emitter Saturation Voltage VBE(sat) Collector-Emitter Saturation Voltage Collector Output Capacitance Cob Noise Figure NF mV mV VCE(sat) fT Transition Frequency VCE=-5V, IC=-2mA mV IC=-0.2mA, VCE=-5V, Rg=2k, f=1kHz 1998. 6. 15 Revision No : 1 2/2