SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$$226 Unit in mm Small Package Sc-59 Low Forward Voltage VFr0.9V(Typ.) Fast Reverse Recovery Time trr=l.6ns(Typ.) Small Total Capacitance CT=0.9pF(Typ.) MAXIMUM RATINGS (Ta=25C) | oo, =e CHARACTERISTIC SYMBOL RATING UNIT Ne ee oo FL} te Maximum(Peak) Reverse Voltage VRM 85 V +) | L S Reverse Voltage VR 80 V " S Maximum(Peak) Forward Current IFM 300% mA i Co Average Forward Current lo 100% mA dq ; L. ANODE 2 Surge Current (10ms) IFSM 2% A B 2. CATHODE 1 2q 3. ANODE 1/CATHODE 2 Power Dissipation P 150 mW JEDEC 7 Junction Temperature Tj 125 C ELAJ sc-59 Storage Temperature Range Tstg -55~125 C TOSHIBA 1~3G16 * Unit Rating. Total Rating=Unit Rating x 0.7 Weight 0.0138 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| NAX.| UNIT VF(1) Ip=1lmA ~ 0.60 ~ Forward Voltage VF(2) IF=1LOmA - 0.72 - Vv VF(3) | Tr=100mA - |0.90 }1.20 T Vp=30V - - O.L Reverse Current RQ) R UA Tr(2) VR=80V - - 0.5 Total Capacitance CT Vp=0, F=1MHz - 0.9 3.0 pF Reverse Recovery Time trr Ip=lOmA, Fig.l - 1.6 4.0 ns Marking A C 3 4 B1$$226 Ip (mA) FORWARD CURRENT TOTAL CAPACITANCE Cr (pF) Fig Ip VR 10 10 Z a S m4 H Z a 107! a) Oo fa yan? = 10 > a] m 107? 0 FORWARD VOLTAGE Vp (V) Cr - ~ T YR 2 i=? Ta =25C ~ f = 1MHz = <4 = a aH B [<a] > oO QO w om iw yn jacq col 5 05 0.3 1 3 10 30 1 = of REVERSE VOLTAGE Vy (V) . 1 REVERSE RECOVERY TIME (try) TEST CIRCUIT INPUT WAVEFORM INPUT 0.014F DUT 0 OUTPUT Q e z % SAMPLING e eS OSCILLOSCOPE -6V _ | E CRpn=500) 50 ns PULSE GENERATOR CRour=50 2) 1134 In VR 25 20 6 8 REVERSE VOLTAGE Vp () 03 1 3 10 30 50 FORWARD CURRENT Ip (mA) OUTPUT WAVEFORM Ip=10mA 9 0.1 Ip IR