SIEMENS BFR 182 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA * fy = BGHz F= 1.2dB at 900MHz PS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking | Ordering Code Pin Configuration Package BFR182 |RGs Q62702-F1315 1=B 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Vaiues Unit Collector-emitter voltage VoEO 12 Vv Collector-emitter voltage Voces 20 Collector-base voltage VoBo 20 Emitter-base voltage VeBo 2 Collector current Ie 35 mA Base current la 4 Total power dissipation Prot mw Tg $ 93C 250 Junction temperature qT 150 C Ambient temperature Ta - 65 ...+ 150 Storage temperature T stg - 65...+ 150 Thermal Resistance Junction - soldering point | Pinus [ < 230 K/W 1) Tg is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1371 09.96SIEMENS BFR 182 Electricai Characteristics at T, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. Ityp. [ max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Io=1MA, ig=0 12 - - Collector-emitter cutoff current loes yA Voe = 20 V, Vag = 0 - - 100 Collector-base cutoff current IcBo nA Vop = 10 V, fe =0 - : 100 Emitter-base cutoff current lepo pA Veg =1V, Io =0 - - 1 DC current gain hee - Ig = 10 MA, Voge =8V 50 100 200 Semiconductor Group 1372 09.96SIEMENS BFR 182 Electrical Characteristics at T, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. max. AC Characteristics Transition frequency fr GHz Io = 15 MA, Veg = 8 V, f= 500 MHz 6 8 - Collector-base capacitance Cob pF Vop = 10 V, Veg = Ybe = 0, f= 1 MHz - 0.33 0.5 Collector-emitter capacitance Coe Voge = 10 V, Vee = Vbe = 0, f= 1 MHz - 0.2 - Emitter-base capacitance Cab Veg = 0.5 V, Vog = Vb = 0, f= 1 MHz - 0.6 - Noise figure F dB Ig = 3 MA, Voge =8 V, Zs = Zgopt f= 900 MHz - 1.2 - f= 1.8 GHz - 1.9 - Power gain 2) Gma Io = 10 MA, VoE = 8 V, 2g = Zgop1 4.= ZLopt f = 900 MHz - 17.5 - f= 1.8 GHz - 11.5 - Transducer gain 1Sot_l? Io = 10 mA, Vee = 8 V, Zg =Z,= 0 2 f= 900 MHz - 14.5 - f= 1.8 GHz - 9 - 2) Ga = !S2q/Sial (k-(k2-1)"/2) Semiconductor Group 1373 09.96SIEMENS BFR 182 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS= 4.8499 fA BF = 84.113 - NF = 0.56639 - VAF = 21.742 Vv IKF = 0.14414 A ISE = 8.4254 fA NE = 0.91624 - BR = 10.004 - NR = 0.54818 - VAR = 2.2595 Vv IKR = 0.03978 A ISC = 5.9438 fA NC = 0.5641 - RB = 2.8263 Q IRB = 0.071955 mA RBM = 3.4217 Q RE = 2.1858 Q RC = 1.8159 Q CJE = 8.8619 fF VJE = 1.0378 Vv MJE = 0.40796 - TF = 22.72 ps XTF = 0.43147 - VIF = 0.34608 V ITF = 6.5523 mA PTF = 0 deg |CJC= 490.25 fF VJC = 1.0132 Vv MJC = 0.31068 - XCJC= 0.19281 - TR= 1.7541 ns CJS = 0 fF VJS = 0.75 Vv MS = 0 - XTB = O - EG = 1.14 eV XTI = 3 - FC = 0.64175 - TNOM 300 K Ail parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fiir Mobil-und Satellitenfunktechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.85 nH Coq LBO = 0.51 nH -__|#-_, LEl= 0.69 nH Le0 ca B| Tronsistor |C = Lp LEO = ot nH 80+ chip | 7c Ici = 0 nH E LCO = 0.49 nH a le oe CBE= 73 iF CCB = 84 fF CCE = 165 fF Lin HAQ7222 Valid up to 6 GHz For examples and ready to use parameters please contact your focal Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://Awww.siemens.de/Semiconductor/products/35/357.htm Semiconductor Group 1374 09.96SIEMENS BFR 182 Total power dissipation Pi; = f(Ta*, Ts) * Package mounted on epoxy 100 ae Li a 20 40 60 a 100 120 C 150 m ThTs 2 Permissible Pulse Load Rinjs = f(t) 10 ; if Lit Hi if Ht tH neat tH rit ; rn rH all I Hi ri . Pe i ISK AW nN UE ni t u Mt ae | ott Ci Avi tr a 1011 1 107 10 10% 10 Semiconductor Group Permissible Pulse Load Piotmax/Ptotpc = f (fp) 103 Tit Fo fl \ ry aa Bite 0 Son HT | Hi i] sie 10% 10 10 ual 107 1375 in te tl | I Lt | rT ee 10 "107 10" we & 09.96SIEMENS BFR 182 Collector-base capacitance C,p = f (Vcp) Transition frequency fF; = f (ic) VBE = he = 0, f= 1MHz Voce = Parameter 10 GHz Cos 0 4 8 12 16 Vv 22 we % Power Gain Gma, Gms = Alc) Power Gain Gma, Gms = Kic) f= 0.9GHz f= 1.8GHz Voge = Pararneter Voge = Parameter 20 12 | 10V Lt ; o Zea =i 2 \\ LZ 40V a | ino: SADE TTS \ 14 N 12 Nov NJ Now 4 10 Now 8 2 | | 0 5 10 15 mA 25 0 4 8 12 16 20 mA 26 we |, e i Semiconductor Group 1376 09.96SIEMENS BFR 182 Power Gain Gma, Gms = {Vce): Intermodulation Intercept Point /P3=f(ic) 1Sp4!2 = K Vg) (3rd order, Output, Z2g=Z =500) f= Parameter Vor = Parameter, f= 900MHz 207 =10mA 30 | L 8V 0.9GHz Bm ae 5V G a IP, | 16 a 7 tn fo ee de ee a oe 0.9GHZ | 141-4 + nee Ps oy 18 f 120-7 ; 1.8GHz fh 1V 10 T 10 4 + i awe em 1.8GHz ew ~ 5 8 7 | / \ Lt | OL. 0 2 4 6 8 v 12 0 5 10 15 Vv 25 we Ver ~ Ver Power Gain Gina, Gms = Ah Power Gain |S21/2= {ff Voge = Parameter Vce = Parameter 32 28 dB dB 28 24 G 26 Sox 22 t 24 22 20 18 16 14 12 8 10 6 a 4 6 2 4 Q 0 00 05 10 15 2.0 25 GHz 35 0 O58 10 #15 20 25 GHz 35 p f ef Semiconductor Group 1377 09.96