The RF Line
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
•Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•Industry Standard Package
•Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
•Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 50 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Continuous IC250 mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD7.0
40 Watts
mW/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 — — Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0) ICBO — — 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 75 mAdc, VCE = 5.0 Vdc) hFE 10 — 100 —
NOTES: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
Order this document
by MRF1004MB/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 8
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 35 Vdc, IE = 0, f = 1.0 MHz) Cob — 3.3 5.0 pF
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) GPB 10 11 — dB
Collector Efficiency
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) η40 45 — dB
Load Mismatch
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1 — 0.1 µF
C2, C4 — 220 pF Chip Capacitor
C3 — 20 µF, 50 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z6 Distributed Microstrip Elements, See Photomaster
Board Material — 0.031″ Thick Glass Teflon
2
REV 8
TYPICAL CHARACTERISTICS
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency
Figure 6. Series Equivalent Input/Output Impedance
f
MHz Zin
Ohms ZOL* (Pin = 400 mW pk)
Ohms
960
1090
1215
5.0 + j17.5
10 + j23
16 + j29.5
23.5 – j26
18.5 – j25
15.5 – j23.5
ZOL* = Conjugate of the optimum load impedance into which the device
ZOL* = output operates at a given output power, voltage, and frequency.
ZOL* (Pout = 4.0 W pk)
Ohms
22.5 – j36
15 – j32.5
11 – j23
µ
µ
µ
µ
3
REV 8
TYPICAL CHARACTERISTICS
Figure 7. Typical Long Pulse Performance
4
REV 8
PACKAGE DIMENSIONS
CASE 332A–03
ISSUE D
K
F
D
HAJ
C
5
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 8
