FPDB50PH60 - Fairchild Semiconductor

FPDB50PH60

December, 2005

FPDB50PH60

Smart Power Module for Front-End Rectifier

General Description

FPDB50PH60 is an advanced smart power module of

PFC(Power Factor Correction) that Fairchild has newly

developed and designed mainly targeting mid-power

application especially for an air conditioners. It combines

optimized circuit protection and drive IC matched to high

frequency switching IGBTs. System reliability is futher

enhanced by the integrated under-voltage lock-out and

over-current protection function.

Features

• Low thermal resistance due to AlN-DBC substrate

• 600V-5 0A 2- ph as e IGB T PW M se mi - c on v er t e r i nc l ud in g

a drive IC for IGBT gate driving and protection

• Typical switching frequency of 20kHz

• Isolation rating of 2500Vrms/min.

Applications

• AC 180V ~ 264V single-phase front-end rectifier

Fig. 1.

26.8mm

44mm

Top View Bottom View

26.8mm

44mm

Top View Bottom View

December, 2005

FPDB50PH60

December, 2005

Integrated Power Functions

• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)

Integrated Drive, Protection and System Control Functions

• For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to a UV fault

• Input interface: 5V CMOS /LS TTL comp atib le, Sch mit t trigge r input

Pin Configuration

Fig. 2.

Top View

(1) VCC(L)

(2) COM

(3) NC

(4) IN(R)

(5) IN(S)

(6) VFO

(21) VAC-

(22) NSENSE

(23) N

(27) PR

(15) NC

(16) NC

(17) NC

(18) NC

(19) RTH

(20) VTH

(24) N

(25) R

(26) S

Case Temperature (TC)

Detecting Point

DBC S ubstrate

(7) C FOD

(8) C SC

(9) N C

(10) NC

(11) NC

(12) NC

(13) NC

(14) NC

(1) VCC(L)

(2) COM

(3) NC

(4) IN(R)

(5) IN(S)

(6) VFO

(21) VAC-

(22) NSENSE

(23) NC

(27) PR

(15) NC

(16) NC

(17) NC

(18) NC

(19) RTH

(20) VTH

(24) N

(25) R

(26) S

Case Temperature (TC)

Detecting Point

DBC S ubstrate

(7) C FOD

(8) C SC

(9) N C

(10) NC

(11) NC

(12) NC

(13) NC

(14) NC

(1) VCC(L)

(2) COM

(3) NC

(4) IN(R)

(5) IN(S)

(6) VFO

(21) VAC-

(22) NSENSE

(23) N

(27) PR

(15) NC

(16) NC

(17) NC

(18) NC

(19) RTH

(20) VTH

(24) N

(25) R

(26) S

Case Temperature (TC)

Detecting Point

DBC S ubstrate

(7) C FOD

(8) C SC

(9) N C

(10) NC

(11) NC

(12) NC

(13) NC

(14) NC

(1) VCC(L)

(2) COM

(3) NC

(4) IN(R)

(5) IN(S)

(6) VFO

(21) VAC-

(22) NSENSE

(23) NC

(27) PR

(15) NC

(16) NC

(17) NC

(18) NC

(19) RTH

(20) VTH

(24) N

(25) R

(26) S

Case Temperature (TC)

Detecting Point

DBC S ubstrate

(7) C FOD

(8) C SC

(9) N C

(10) NC

(11) NC

(12) NC

(13) NC

(14) NC

FPDB50PH60

December, 2005

Pin Descriptions

Internal Equivalent Circuit and Input/Output Pins

Note :

1) Converter is compose d of tw o IGBTs including four diodes and one IC which has gate driving and protection functions.

Fig. 3.

Pin Number Pin Name Pin Description

CC Common Bias Voltage for IC and IGBTs Driving

2 COM Common Supply Ground

4IN

(R) Signal Input for R-phase IGBT

5IN

(S) Signal Input for S-phase IGBT

FO Fault Output

FOD Capacitor for Fault Output Duratio n Time Selection

SC Capacitor (Low-pass Filter) for Over Current Detection

19 R(TH) NTC Thermistor terminal

20 V(TH) NTC Thermistor terminal

21 VAC- Current Sensing Terminal

22 NSENSE Current Sensing Reference Terminal

24 N Negative Rail of DC–Link

25 R Output for R Phase

26 S Output for S Phase

27 PRPositive Rail of DC–Link

3, 9~18, 23 NC No Connection

CSC

CFOD

VFO

IN(S)

IN(R)

COM

VCC

OUT(S)

OUT(R)

(20) VTH

(19) RTH

(8) C SC

(7) C FOD

(6) V FO

(5) IN (S)

(4) IN (R)

(2) C O M

(1) V C C

(27 ) PR

(26 ) S

(25 ) R

(23 ) NC

(22 ) NSENSE

(21 ) VAC-

Shunt

Resistor

NTC

Thermistor

Q1 Q2

(24 ) N

FPDB50PH60

December, 2005

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Converter Part

Note

1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM,

the average junction temperat ure should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)

Control Part

Total System

Thermal Resistance

Note :

2. For the measurement point of case temperature(TC), please refer to Fig. 2.

Item Symbol Condition Rating Unit

Supply Voltage ViApplied between R-S 264 VRMS

Supply Voltage (Surge) Vi(Surge) Applied between R-S 500 V

Output Voltage VPN Applied between P- N 450 V

Output Voltage (Surge) VPN(Surge) Applied between P- N 500 V

Collector-emitter Voltage VCES 600 V

Input Current (100% Load) IiTC < 95°C, Vi=220V, VPN= 390V,

VPWM=20kHz 30 A

Input Current (125% Load) Ii(125%) TC < 95°C, Vi=220V, VPN= 390V,

VPWM=20kHz, 1min Non-repetitive 37.5 A

Collector Dissipation PCTC = 25°C per One IGBT 143 W

Power Rating of Shunt Resistor PRSH TC < 125°C 2 W

Operating Junction Temperature TJ(Note 1) -20 ~ 125 °C

Item Symbol Condition Rating Unit

Control Supply Voltage VCC Applied between VCC - COM 20 V

Input Signal Voltage VIN Applied between IN - COM -0.3~5.5 V

Fault Output Supply Voltage VFO Applied between VFO - COM -0.3~VCC+0.3 V

Fault Output Current IFO Sink Current at VFO Pin 5 mA

Current Sensing Input Voltage VSC Applied between CSC - COM -0.3~VCC+0.3 V

Item Symbol Condition Rating Unit

Module Case Operation Temperature TC-20 ~ 100 °C

Storage Temperature TSTG -40 ~ 125 °C

Isolation Voltage VISO 60Hz, Sinusoidal, AC 1 minute, Connection

Pins to DBC 2500 Vrms

Item Symbol Condition Min. Typ. Max. Unit

Junction to Case Thermal

Resistance

(Referenced to PKG cen-

ter)

Rθ(j-c)Q IGBT - - 0.7 °C/W

Rθ(j-c)HD High-side diode - - 1.5 °C/W

Rθ(j-c)LD Low-side diode - - 0.85 °C/W

FPDB50PH60

December, 2005

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Converter Part

Note

3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate dr iving condition

internally. For the detailed information, please see Fig. 4

Control Part

Note

4. The fault-out pulse width tFOD depends on the capacitan ce value of CFOD according to the following appr oximate equation : CFOD = 18.3 x 10-6 x tFOD[F]

Item Symbol Condition Min. Typ. Max. Unit

IGBT saturation voltage VCE(sat) VCC =15V, VIN = 5V; IC =50A - 2.8 3.2 V

High-side diode voltage VFH IC = 50A - 2. 1 2.7 V

Low-side diode voltage VFL IC = 50A - 1.3 1.7 V

Switching Times tON VPN = 400V, VCC = 15V, IC =30A

VIN = 0V ↔ 5V, Inductive Load

(Note 3)

-550-ns

tC(ON) -200-ns

tOFF -430-ns

tC(OFF) -180-ns

trr -60-ns

Irr -6-A

Current sensing resistor RSENSE 1.8 2.0 2.2 mΩ

Collector - emitter

Leakage Current ICES VCE = VCES --250µA

Item Symbol Condition Min. Typ. Max. Unit

Quiescent VCC Supply Cur-

rent IQCCL VCC = 15V, IN = 0V VCC - COM - - 2 6 mA

Fault Output Voltage VFOH VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V

VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V

Over Current Trip Level VOC(ref) VCC = 15V 0.45 0.5 0.55 V

Supply Circuit Under-

Vo ltage Protec tion UVCCD Detection Level 10.7 11.9 13.0 V

UVCCR Reset Level 11.2 12.4 13.2 V

Fault-out Pulse Width tFOD CFOD = 33nF (Note 4) 1.4 1.8 2.0 m s

ON Threshold Voltage VIN(ON) Applied between IN - COM 3.0 - - V

OFF Threshold Voltage VIN(OFF) --0.8V

Resistance of Thermistor RTH @ TC = 25°C (Note Fig. 9) - 50 - kΩ

@ TC = 80°C (Note Fig. 9) - 5.76 - kΩ

FPDB50PH60

December, 2005

Electrical Characteristics

Fig. 4. Switching Time Definition

Mechanical Characteris tics and Ratings

Fig. 5. Flatness Measurement Position

Item Condition Limits Units

Min. Typ. Max.

Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.72 N•m

Device Flatness Note Fig. 5 0 - +120 µm

Weight -15.00- g

tON tC(ON)

trr

Irr

10% of IC

100% of IC

90% of IC

120% of IC

15% of VCE

(a) T urn -o n

tOFF

tC(OFF)

(b) T u rn -off

VCE

VIN VIN

15% of VCE

10% of IC

(+)

FPDB50PH60

December, 2005

Time Charts of SPMs Protective Function

P1 : Normal operation - IGBT ON and conducting current

P2 : Under voltage detectio n

P3 : IGBT gate interrupt

P4 : Fault signal generation

P5 : Under voltage reset

P6 : Normal operation - IGBT ON and conducting current

Fig. 6. Under-Voltage Protection

P1 : Normal operation - IGBT ON and conducting current

P2 : Over current detection

P3 : IGBT gate interrupt / Fault signal generation

P4 : IGBT is slowly turned off

P5 : IGBT OFF signal

P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation

P7 : IGBT OFF state

P8 : Fault Output reset and normal operation start

Fig. 7. Over Current Protection

In te rn a l IGB T

Ga te -E mitte r Vo lta g e

Input S ignal

O utput C urrent

Fault O utput Signal

C ontrol Supply Voltage

detect

reset

In te rn a l IGBT

G ate-E m itter V oltage

In p u t Sig n a l

Ou tp u t Cu rre n t

Sensing Voltage

Fault O utput Signal

OC Reference

Voltage (0.5V)

RC Filte r De lay

OC D e te c tio n

FPDB50PH60

December, 2005

Fig. 8. Application Example

CSC

CFOD

VFO

IN(S)

IN(R)

COM

VCC

OUT(S)

OUT(R)

VTH

RTH

CSC

CFOD

VFO

IN(S)

IN(R)

COM

VCC

NSENSE

VAC-

Shunt

Resistor

NTC

Thermistor

Microcontroller

DSP

+5V

Vac

Inverter

PFCM

R-T Graph

100

120

20 30 40 50 60 70 80 90 100 110 120 130

Temperature [°C]

Resistance [kΩ]

Fig. 9. R-T Curve of the Built-in Thermistor

FPDB50PH60

December, 2005

Detailed Package Outline Drawings

FPDB50PH60

December, 2005

Detailed Package Outline Drawings

FPDB50PH60

December, 2005

Detailed Package Outline Drawings

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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