SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
TISP4070J1BJ THRU TISP4395J1BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Description
Ground Return Element of Y Configuration
-2x Current Capability of Y Upper Elements
-Available in a Wide Range of Voltages
-Enables Symmetrical and Asymmetrical Y Designs
-SMB (DO-214AA) Package
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element
of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,
the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using
the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the
TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the
Applications Information section. These SMB package combinations are often more space efficient than single package Y protection
multi-chip integrations.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are
limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low-
voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the devices switches off and restores normal system operation.
How to Order
Device Symbol
SMB Package (Top View)
Device VDRM
V
V(BO)
V
TISP4070J1 58 70
TISP4080J1 65 80
TISP4095J1 75 95
TISP4115J1 90 115
TISP4125J1 100 125
TISP4145J1 120 145
TISP4165J1 135 165
TISP4180J1 145 180
TISP4200J1 155 200
TISP4219J1 180 219
TISP4250J1 190 250
TISP4290J1 220 290
TISP4350J1 275 350
TISP4395J1 320 395
12
MT2MT1
MD4JAA
MT2
MT1 SD4JAA
Rated for International Surge Wave Shapes
Wave Shape Standard I
PPSM
A
2/10 GR-1089-CORE 1000
8/20 IEC 61000-4-5 800
10/160 TIA/EIA-IS-968 (FCC Part 68) 400
10/700 ITU-T K.20/21/45 350
10/560 TIA/EIA-IS-968 (FCC Part 68) 250
10/1000 GR-1089-CORE 200
............................................ UL Recognized Components
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TISP 4xxxJ1BJ B J (SMB/D O - 214AA J-Bend) R (Embossed T ape Re eled) TISP4xxxJ1BJR-S
Order As
*RoHS COMPLIANT
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
TISP4xxxJ1BJ Overvoltage Protector Series
Recommended Operating Conditions
Rating Symbol Value Unit
Repetitive peak off-state voltage
’4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
VDRM
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1000
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape) 800
10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape) 400
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 370
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 350
5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single) 350
10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape) 250
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 200
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM 80
100
A
50 Hz, 1 cycle
60 Hz, 1 cycle
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A diT/dt 800 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ=25°C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Component Min Typ Max Unit
R1, R2
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K.20/K.45/K.21 (Basic coordi nation with 400 V GDT)
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 survival
0
6.5
0
0
0
Ω
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current V
D
= ±V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10 µA
V
(BO)
AC breakover voltage dv/dt = ±250 V/ms, R
SOURCE
=300Ω
4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
V
V
(BO)
Ramp breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±77
±88
±104
±125
±135
±156
±177
±192
±212
±231
±263
±303
±364
±409
V
V
(BO)
Impulse breakover
voltage
2/10 wave shape, I
PP
=±1000 A, R
S
=2.5Ω,
(see Note 3)
4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±96
±101
±112
±130
±140
±161
±183
±199
±221
±242
±276
±320
±386
±434
V
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
I(BO) Breakover current dv/dt = ±250 V/ms, R SOURCE =300Ω±600 mA
IHHolding current IT=±5A, di/dt=+/-30mA/ms ±20 mA
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85 VDRM ±5 kV/µs
IDOff-state current VD=±50 V TA = 85 °C±10 µA
Coff Off-state capacitance
f=1MHz, Vd=1V rms, V
D=0, ‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
195
120
105
235
145
125
pF
f=1MHz, Vd=1V rms, V
D=-1V ‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
180
110
95
215
132
115
f=1MHz, Vd=1V rms, V
D=-2V ‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
165
100
90
200
120
105
f=1MHz, Vd=1V rms, V
D=-50V ‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
85
50
42
100
60
50
f=1MHz, Vd=1V rms, V
D= -100 V
(see Note 4)
‘4125 thru ‘4219
‘4250 thru ‘4395
40
35
50
40
NOTE 4: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V
Parameter Test Conditions Min Typ Max Unit
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000)
,
TA = 25 °C, (see Note 5) 90 °C/W
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for Terminals 1-2
All Measurements are Referenced to Terminal 2
-v VDRM
IDRM
VD
IH
ITSM
IPPSM
V(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
VD
ID
IH
ITSM
IPPSM
-i
Quadrant III
Switching
Characteristic PM4XAF
VDRM
IDRM
I(BO)
I(BO)
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
Figure 2. Figure 3.
Figure 4. Figure 5.
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0·001
0·01
0·1
1
10
100 TC4JAG
VD = ±50 V
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.90
0.95
1.00
1.05
1.10
1.15 TC4JAF
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
VT - On-State Voltage - V
0.7 1.5 2 3 4 157 1510
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
300
400
1
10
100
TA = 25 °C
tW = 100 µs
TC4JAA
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4JAD
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
Figure 6. Figure 7.
Figure 8.
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
VD - Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalized to V D = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
TJ = 25 °C
Vd = 1 Vrms
TC4JABB
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
VDRM - Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300 350100
C - Differential Off-State Capacitance - pF
40
50
60
70
80
90
C = Coff(-2 V) - Coff(-50 V)
TC4JAE
NORMALIZED CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
VD — Off-State Voltage — V
0.5 0.7 123457 2030405010
Normalized Capacitance Asymmetry - %
0.0
0.5
1.0
1.5
2.0
2.5 TC4JCC
Vd = 1 V rms, 1 MHz
Vd = 10 mV rms, 1 MHz
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Rating and Thermal Information
Figure 9. Figure 10.
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
2
3
4
5
6
7
8
9
15
20
30
40
10
TI4JAA
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*V
GEN /ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4JADC
'4070
THRU
'4115
'4125
THRU
'4219
'4250
THRU
'4395
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Y Configuration Design
This protection configuration has three modes of protection. The RING to TIP terminal pair protection is given by the series combination of
protectors Th1a and Th1b, see Figure 11. The terminal pair protection voltage will be the sum of the V(BO), breakover voltage, of Th1a and the
V(BO) of Th1b. Protectors Th1a and Th1b are the same device type and the terminal pair protection voltage will be 2 V(BO)1. For a terminal pair
protection voltage of ±400 V, Th1a and Th1b would have V(BO)1 = ±400/2 = ±200 V.
Similarly for the other terminal pairs, RING to GROUND protection is given by the series combination of Th1b and Th2 and the terminal pair
protection voltage is V(BO)1 + V(BO)2. TIP to GROUND protection voltage will also be V(BO)1 + V (BO)2.
The maximum terminal pair voltage before clipping might occur is the sum of the protector VDRM, off-state voltages, see Figure 12. For RING to
TIP this will be 2 VDRM1. The ±200 V V(BO)1 protectors of the previous example have a VDRM of ±155 V, giving a maximum non-clipping signal
voltage of ±310 V. For RING to GROUND and TIP to GROUND terminal pairs, the maximum non-clipping signal voltage will be VDRM1 + V DRM2 .
Under longitudinal surge conditions, when the prospective currents of the line conductors, IRING and ITIP, are equal, Th2, the ground return
protector, carries the sum of the Th1a and Th1b currents, see Figure 13. The current rating of Th2 must be twice that of Th1a and Th1b.
GR-1089-CORE Designs
The main impulse waveforms of the standard are 500 A, 2/10 and 100 A, 10/1000. Assuming fuse current limiters, F1a and F1b, a suitable
Th1a and Th1b protector for these conductor currents is the TISP4xxxH3BJ series of devices. The ground return protector, Th2, must be rated
for at least 1000 A,2/10 and 200 A, 10/1000. A suitable Th2 protector for these ground currents is the TISP4xxxJ1BJ series of devices. This
arrangement is shown in Figure 14 and the following table lists all the catalogue device combinations.
Figure 11. Protection Voltage Figure 12. Off-State Voltage Figure 13. Current Flow
AI4JAC
Th1a
Th2
Th1b
RING
TIP
V(BO)1
V(BO)1
V(BO)2
V(BO)1 + V(BO)2
2 V(BO)1
V(BO)1 + V(BO)2
AI4JAB
Th1a
Th2
Th1b
RING
TIP
VDRM1
VDRM1
VDRM2
VDRM1 + VDRM2 VDRM1 + VDRM2
2 VDRM1
Th1a
AI4JAA
Th1b
RING
TIP
UNPROTECTED SIDE
PROTECTED SIDE
ITIP IRING
II
TIP
+
I
RING Th2
RING to TIP Voltages RING to GROUND,
TIP to GROUND Voltages GR-1089-CORE Y Configuration Parts and Part Voltages
V
DRM
V
V
(BO)
V
V
DRM
V
V
(BO)
V
Th1a, Th1b
Part #
Th2
Part #
V
DRM
V
V
(BO)
V
±116 ±140 ±116 ±140 TISP4070H3BJ TISP4070J1BJ ±58 ±70
±130 ±160 ±130 ±160 TISP4080H3BJ TISP4080J1BJ ±65 ±80
±150 ±190 ±150 ±190 TISP4095H3BJ TISP4095J1BJ ±75 ±95
±180 ±230 ±180 ±230 TISP4115H3BJ TISP4115J1BJ ±90 ±115
±200 ±250 ±200 ±250 TISP4125H3BJ TISP4125J1BJ ±100 ±125
±240 ±290 ±240 ±290 TISP4145H3BJ TISP4145J1BJ ±120 ±145
±270 ±330 ±270 ±330 TISP4165H3BJ TISP4165J1BJ ±135 ±165
±290 ±360 ±290 ±360 TISP4180H3BJ TISP4180J1BJ ±145 ±180
±310 ±400 ±310 ±400 TISP4200H3BJ TISP4200J1BJ ±155 ±200
±360 ±438 ±360 ±438 TISP4219H3BJ TISP4219J1BJ ±180 ±219
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
GR-1089-CORE Designs (Continued)
ITU-T K.20, K.45 and K.21 Designs
The main impulse voltage wave shape of these recommendations is 10/700. The current wave shape is loading dependent, but it is 5/310 into
a short circuit. To coordinate with a ±400 V primary protector a minimum series resistance of 6.5 Ω is required (“The New ITU-T
Telecommunication Equipment Resistibility Recommendations”, Compliance Engineering Magazine, January-February 2002). The coordination
resistance limits the peak non-truncated current to ±400/6.5 = 62 A. A suitable Th1a and Th1b protector for these conductor currents is the
TISP3xxxT3BJ series of devices, which combine Th1a and Th1b in a single SMB3 package. The ground return protector, Th2, must be rated
for at least 124 A of a 5/310 waveshape. Suitable Th2 protectors for these ground currents are the TISP4xxxH3BJ or TISP4xxxJ1BJ series of
devices. The arrangement is shown in Figure 15 and the following table lists all the catalogue device combinations. Using the SMB3 packaged
TISP3xxxT3BJ saves one third of the PCB placement area compared to solution using three single protector SMB packaged devices.
±380 ±500 ±380 ±500 TISP4250H3BJ TISP4250J1BJ ±190 ±250
±440 ±580 ±440 ±580 TISP4290H3BJ TISP4290J1BJ ±220 ±290
±550 ±700 ±550 ±700 TISP4350H3BJ TISP4350J1BJ ±275 ±350
±640 ±790 ±640 ±790 TISP4395H3BJ TISP4395J1BJ ±320 ±395
RING to TIP Voltages RING to GROUND,
TIP to GROUND Voltages GR-1089-CORE Y Configuration Parts and Part Voltages
V
DRM
V
V
(BO)
V
V
DRM
V
V
(BO)
V
Th1a, Th1b
Part #
Th2
Part #
V
DRM
V
V
(BO)
V
Figure 14. GR-1089-CORE Design Figure 15. Coordinated ITU-T K Recommendation Design
AI4JAD
Th1a
TISP4xxxH3BJ
Th2
TISP4xxxJ1BJ
Th1b
TISP4xxxH3BJ
F1a
F1b
RING
TIP
AI4JAE
Th2
TISP4xxxJ1BJ
Th1a + Th1b
TISP4xxxT3BJ
R1a
R1b
RING
TIP
RING to TIP Voltages RING to GROUND,
TIP to GROUND Voltages
ITU-T Y Configuration Parts and Part Voltages
R1a = R1b = 6.5 Ω
V
DRM
V
V
(BO)
V
V
DRM
V
V
(BO)
V
Th1a + Th1b
Part #
Th2
Part #
V
DRM
V
V
(BO)
V
±116 ±140 ±116 ±140 TISP3070T3BJ TISP4070J1BJ ±58 ±70
±130 ±160 ±130 ±160 TISP3080T3BJ TISP4080J1BJ ±65 ±80
±150 ±190 ±150 ±190 TISP3095T3BJ TISP4095J1BJ ±75 ±95
±180 ±230 ±180 ±230 TISP3115T3BJ TISP4115J1BJ ±90 ±115
±200 ±250 ±200 ±250 TISP3125T3BJ TISP4125J1BJ ±100 ±125
±240 ±290 ±240 ±290 TISP3145T3BJ TISP4145J1BJ ±120 ±145
±270 ±330 ±270 ±330 TISP3165T3BJ TISP4165J1BJ ±135 ±165
±290 ±360 ±290 ±360 TISP3180T3BJ TISP4180J1BJ ±145 ±180
±310 ±400 ±310 ±400 TISP3200T3BJ TISP4200J1BJ ±155 ±200
±360 ±438 ±360 ±438 TISP3219T3BJ TISP4219J1BJ ±180 ±219
±380 ±500 ±380 ±500 TISP3250T3BJ TISP4250J1BJ ±190 ±250
±440 ±580 ±440 ±580 TISP3290T3BJ TISP4290J1BJ ±220 ±290
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
ITU-T K.20, K.45 and K.21 Designs (Continued)
An ITU-T compliant design would probably require the replacement of the fuses by coordination resistors. With a ±410 V off-state voltage, this
may seem unnecessary as modern primary protectors will switch at lower voltages and automatically coordinate. On a perfect longitudinal
waveform this is true. However, the ITU-T also applies a transverse (metallic) test as well, to simulate non-simultaneous switching of the
primary protection. In this case, one conductor is grounded, which places the RING to TIP protection in parallel with the unswitched primary
protector. The ±270 V off-state voltage is likely to be lower than the primary switching voltage and there isn’t coordination. Under GR-1089-
CORE conditions with non-simultaneous switching, the 100 A 10/1000 current, which should have gone through the unswitched primary
protector, is diverted through the top arms of the Y into the switched primary, causing a 200 A current flow in that primary protector.
±550 ±700 ±550 ±700 TISP3350T3BJ TISP4350J1BJ ±275 ±350
±640 ±790 ±640 ±790 TISP3395T3BJ TISP4395J1BJ ±320 ±395
RING to TIP Voltages RING to GROUND,
TIP to GROUND Voltages
ITU-T Y Configuration Parts and Part Voltages
R1a = R1b = 6.5 Ω
VDRM
V
V(BO)
V
VDRM
V
V(BO)
V
Th1a + Th1b
Part #
Th2
Part #
VDRM
V
V(BO)
V
Asymmetrical Designs
These designs are for special needs, where the RING to TIP protection voltage must be different to the RING to GROUND and TIP to
GROUND voltages. ADSL modem interfaces often have a need for asymmetric voltage limiting, see Figure 16. Here, the RING to TIP voltage
limitation is given by the d.c. blocking capacitor, C1, and the RING to GROUND and TIP to GROUND limitation is insulation breakdown. Often
the breakdown limit is set by the spacing of the PW (Printed Wiring) tracks. Figure 17 shows a solution. Using two ±165 V V(BO) parts for Th1a
and Th1b, the RING to TIP voltage is limited to ±330 V. Using a higher voltage ±350 V V(BO) part for Th2 limits the insulation stress to ±515 V.
Figure 17 and its following table is for a GR-1089-CORE compliant design.
RING to TIP Voltages RING to GROUND,
TIP to GROUND Voltages GR-1089-CORE Y Configuration Parts and Part Voltages
VDRM
V
V(BO)
V
VDRM
V
V(BO)
V
Th1a, Th1b Th2
Part # VDRM
V
V(BO)
VPart # VDRM
V
V(BO)
V
±270 ±330 ±410 ±515 TISP4165H3BJ ±135 ±165 TISP4350J1BJ ±275 ±350
Figure 16. ADSL Modem Interface Voltage Limitations Figure 17. Asymmetrical Design for US ADSL Modems
T1
TIP
RING
C1
T1 or PW
Insulation
Breakdown
C1
Voltage
Limit
AI4JAH
Th1a
TISP4165H3BJ
Th2
TISP4350J1BJ
Th1b
TISP4165H3BJ
F1a
F1b
RING
TIP
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Carrier Information
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
SMB Land Pattern
MDXX BID
2.54
(.100)
2.40
(.095)
2.16
(.085)
DIMENSIONS ARE: MILLIMETERS
(INCHES)
Device Symbolization Code
TISP4070J1 4070J1
TISP4080J1 4080J1
TISP4095J1 4095J1
TISP4115J1 4115J1
TISP4125J1 4125J1
TISP4145J1 4145J1
TISP4165J1 4165J1
TISP4180J1 4180J1
TISP4200J1 4200J1
TISP4219J1 4219J1
TISP4250J1 4250J1
TISP4290J1 4290J1
TISP4350J1 4350J1
TISP4395J1 4395J1
Package Carrier Standard Quantity
SMB Embossed Tape Reel Pack 3 000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Bourns:
TISP4095J1BJR-S TISP4080J1BJR-S TISP4115J1BJR-S TISP4145J1BJR-S TISP4180J1BJR-S TISP4165J1BJR-
S TISP4219J1BJR-S TISP4290J1BJR-S TISP4250J1BJR-S TISP4200J1BJR-S TISP4350J1BJR-S
TISP4395J1BJR-S TISP4070J1BJR-S
