June 2015
DocID027433 Rev 3
1/13
This is information on a product in full production.
www.st.com
STL20N6F7
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - product ion data
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max ID
STL20N6F7 60 V 0.0054 Ω 20 A
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code Marking Package Packing
STL20N6F7 20N6F PowerFLAT™ 3.3x3.3 Tape and reel
1234
PowerFLAT™ 3.3x3.3 HV
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
8
1 2 3 4
76 5
AM15810v1
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics .................................................................... 5
3 Test cir c uit s ..................................................................................... 7
4 Package mechanical data ............................................................... 8
4.1 Pow er FLAT 3.3x3.3 pac kage informat ion ......................................... 9
5 Revision history ............................................................................ 12
STL20N6F7
Electrical ratings
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1 Electrical ratings
Table 2: A bsolut e maximum r ating s
Symbol Parameter Value Unit
VDS Drain-source voltage 60 V
VGS Gate-source voltage ± 20 V
ID
(1)
Drain current (continuous) at TC = 25 °C 100 A
ID
(1)
Drain current (continuous) at TC = 100 °C 61 A
IDM
(1)(2)
Drain current (pulsed) 400 A
ID
(3)
Drain current (continuous) at Tpcb = 25 °C 20 A
ID
(3)
Drain current (continuous) at Tpcb = 100 °C 12 A
IDM
(2)(3)
Drain current (pulsed) 80 A
PTOT
(1)
Total dissipation at TC = 25 °C 78 W
PTOT
(3)
Total dissipation at Tpcb = 25 °C 3 W
Tstg Storage temperat ure -55 to 150 °C
Tj Operatin g junct ion tem perat ure
Notes:
(1)This value is rated according to Rthj-c.
(2)Pulse width limited by safe operating area.
(3)This value is rated according to Rthj-pcb.
Table 3: Thermal data
Symbol Parameter Value Unit
Rthj-pcb
(1)
Thermal resi stan ce jun cti on-pcb max. 42.8 °C/W
Rthj-case Thermal resi stan ce jun cti on-case max. 1.6 °C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec.
Electrical characteristics
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2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
breakdown voltage ID = 1 mA, VGS = 0 V 60
V
IDSS Zero gate voltage
drain current VGS = 0 V
VDS = 60 V
1 µA
IGSS Gate-body leakage
current VGS = 20 V, VDS = 0
100 nA
VGS(th) Gate threshold
voltage VDS = VGS, ID = 250 μA 2
4 V
RDS(on) Static drain-source
on-resistance VGS = 10 V, ID = 10 A
0.0046 0.0054 Ω
Table 5: Dy namic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capac itan ce VDS = 25 V, f = 1 MHz,
VGS = 0 V
- 1600 - pF
Coss Output capacitance - 880 - pF
Crss Reverse transfer
capacitance - 66 - pF
Qg Total gate charge VDD = 30 V, ID = 20 A,
VGS = 10 V
- 25 - nC
Qgs Gate-source charge - 7.2 - nC
Qgd Gate-drain charge - 8.1 - nC
Table 6: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VDD = 30 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
- 15 - ns
tr Rise time - 17.6 - ns
td(off) Turn-off delay time - 24.4 - ns
tf Fall time - 7.8 - ns
Table 7: Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VSD
(1)
Forward on voltage ISD = 20 A, VGS = 0 -
1.2 V
trr Reverse recovery
time ID = 20 A,
di/dt = 100 A/µs
VDD = 48 V
- 39.6
ns
Qrr Reverse recovery
charge - 36
nC
IRRM Reverse recovery
current - 1.8
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
STL20N6F7
Electrical characteristics
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2.1 Electrical characteristics
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer char a cter i st ics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
Electrical characteristics
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Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Source-drain diode forward characteristics
STL20N6F7
Test circuits
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3 Test circuits
Figure 13: Switching times test circuit for resistive
load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching
and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
Package mechanical data
STL20N6F7
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
STL20N6F7
Package mechanical data
DocID027433 Rev 3
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4.1 PowerFLAT 3.3x3.3 package information
Figure 19: PowerFLAT™ 3.3x3.3 HV package outline
BOTTOM VIEW
SIDE VIEW
TOP VIEW
8465286_A
Package mechanical data
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Table 8: PowerFLAT™ 3.3x3.3 HV package mechanical data
Dim. mm
Min. Typ. Max.
A 0.70 0.80 0.90
b 0.25 0.30 0.39
c 0.14 0.15 0.20
D 3.10 3.30 3.50
D1 3.05 3.15 3.25
D2 2.15 2.25 2.35
e 0.55 0.65 0.75
E 3.10 3.30 3.50
E1 2.90 3.00 3.10
E2 1.60 1.70 1.80
H 0.25 0.40 0.55
K 0.65 0.75 0.85
L 030 0.45 0.60
L1 0.05 0.15 0.25
L2
0.5
ϑ 8° 10° 12°
STL20N6F7
Package mechanical data
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Figure 20: PowerFLAT™ 3.3x3.3 HV recommended footprint
8465286_footprint
Revision history
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5 Revision history
Table 9: Document rev ision history
Date Revision Changes
28-Jan-2015 1 Fi rst release.
03-Feb-2015 2 Updated Table 2: "Absolute maximum ratings"
10-Jun-2015 3
In Section 2 Electrical characteristics:
- updated Table 5: Dynamic
- updated Table 6: Switching times
- updated Table 7: Source-drain diode
Added Section 2.1 Electrical characteristics (curves)
STL20N6F7
DocID027433 Rev 3
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