PN4393 Silicon N-Channel JFET Transistor Chopper, High Speed Switch TO92 Type Package Applications: D Low Level Analog Switches D Chopper Stabilized Amplifiers D Sample and Hold Circuits Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired and are based on a maximum junction temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit -30 - - V VGS = -15V, VDS = 0 - - -1.0 nA VGS = -15V, VDS = 0, TA = +150C - - -0.2 A -0.5 - -3.0 V OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) VDS = 20V, ID = 1nA Gate-Source Forward Voltage VGS(f) VDS = 0, IG = 1mA - - 1.0 V Drain Cutoff Leakage Current ID(off) VDS = 20V, VGS = -5V - - 0.1 nA VDS = 20V, VGS = -5V, TA = +150C - - 0.2 A VDS = 20V, VGS = 0, Note 2 5 - 30 mA ON Characteristics Zero-Gate Voltage Drain Current IDSS Drain-Source ON Voltage VDS(on) ID = 3mA, VGS = 0 - - 0.4 V Drain-Source ON Resistance rDS(on) - - 100 ID = 1mA, VGS = 0 Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 1%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS = 0, f = 1kHz - - 100 Small-Signal Characteristics Drain-Source ON Resistance rds(on) Input Capacitance Ciss VDS = 20V, VGS = 0, f = 1MHz - - 14 pF Reverse Transfer Capacitance Crss VGS = 5V, f = 1MHz - - 3.5 pF Switching Characteristics Rise Time tr ID(on) = 3mA - - 5 ns Fall Time tf VGS(off) = 3V - - 30 ns Turn-On Time ton ID(on) = 3mA - - 15 ns Turn-Off Time toff VGS(off) = 3V - - 50 ns .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D S G .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max