PN4393
Silicon N−Channel JFET Transistor
Chopper, High Speed Switch
TO92 Type Package
Applications:
DLow Level Analog Switches
DChopper Stabilized Amplifiers
DSample and Hold Circuits
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Gate Voltage, VDG 30V............................................................
Gate−Source Voltage, VGS −30V.........................................................
Forward Gate Current, IGF 50mA.........................................................
Total Device Dissipation (TA = +25C), PD625mW.........................................
Derate Above 25C 5mW/C.......................................................
Operating Junction Temperature Range, TJ−55 to +150C..................................
Storage Temperature Range, Tstg −55 to +150C..........................................
Thermal Resistance, Junction−to−Case, RthJC 125C/W....................................
Thermal Resistance, Junction−to−Ambient, RthJA 357C/W..................................
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired and are based on a maximum junction temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = 1A, VDS = 0 −30 − − V
Gate Reverse Current IGSS VGS = −15V, VDS = 0 − − −1.0 nA
VGS = −15V, VDS = 0, TA = +150C− − −0.2 A
Gate−Source Cutoff Voltage VGS(off) VDS = 20V, ID = 1nA −0.5 − −3.0 V
Gate−Source Forward Voltage VGS(f) VDS = 0, IG = 1mA − − 1.0 V
Drain Cutoff Leakage Current ID(off) VDS = 20V, VGS = −5V − − 0.1 nA
VDS = 20V, VGS = −5V, TA = +150C− − 0.2 A
ON Characteristics
Zero−Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0, Note 2 5−30 mA
Drain−Source ON Voltage VDS(on) ID = 3mA, VGS = 0 − − 0.4 V
Drain−Source ON Resistance rDS(on) ID = 1mA, VGS = 0 − − 100
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 1%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small−Signal Characteristics
Drain−Source ON Resistance rds(on) VDS = VGS = 0, f = 1kHz − − 100
Input Capacitance Ciss VDS = 20V, VGS = 0, f = 1MHz − − 14 pF
Reverse Transfer Capacitance Crss VGS = 5V, f = 1MHz − − 3.5 pF
Switching Characteristics
Rise Time trID(on) = 3mA − − 5 ns
Fall Time tfVGS(off) = 3V − − 30 ns
Turn−On Time ton ID(on) = 3mA − − 15 ns
Turn−Off Time toff VGS(off) = 3V − − 50 ns
.021 (.445) Dia Max
D S G
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
