VUO62-12NO7 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 60 A I FSM = 550 A 3~ Rectifier Bridge Part number VUO62-12NO7 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - Features / Advantages: Applications: Package: PWS-D Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Easy to mount with two screws Base plate: Copper internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO62-12NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved 1200 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.07 V 1.30 V 0.96 V IF = 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125 C 1.27 V T VJ = 150 C 60 A TVJ = 150 C 0.78 V 8.1 m d= for power loss calculation only thermal resistance case to heatsink max. Unit 1300 V VR = 1200 V rectangular R thCH typ. VR = 1200 V TC = 120 C Ptot min. 1.1 K/W 0.4 K/W TC = 25C 110 W t = 10 ms; (50 Hz), sine TVJ = 45C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 C 470 A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 A t = 10 ms; (50 Hz), sine TVJ = 45C 1.52 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 1.48 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 1.11 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 1.06 kAs 19 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220b VUO62-12NO7 Package Ratings PWS-D Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 C -40 125 C 125 C 159 Weight g MD mounting torque 4.25 5.75 Nm MT terminal torque 4.25 5.75 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Logo UL Product Number 26.0 mm 3000 V 2500 V XXXX-XXXX yywwZ 1234 Ordering Standard Location Lot# Ordering Number VUO62-12NO7 Equivalent Circuits for Simulation V0 mm Circuit Diagram Date Code I 50/60 Hz, RMS; IISOL 1 mA 9.5 R0 Marking on Product VUO62-12NO7 * on die level Delivery Mode Box Code No. 460451 T VJ = 150C Rectifier V 0 max threshold voltage 0.78 V R0 max slope resistance * 6.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO62-12NO7 Outlines PWS-D + D1 D3 D5 D2 D4 D6 ~ ~ ~ - IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO62-12NO7 Rectifier 500 100 50 Hz 0.8 x V RRM 10000 VR = 0 V 80 400 60 IF 2 IFSM It TVJ = 45C TVJ = 45C 1000 [A] [A] 40 2 [A s] TVJ = 150C 300 TVJ = 150C TVJ = 125C 150C 20 0 0.4 TVJ = 25C 0.8 1.2 200 0.001 1.6 100 0.010 VF [V] Ptot 1 10 t [ms] 2 Fig. 3 I t vs. time per diode Fig. 2 Surge overload current vs. time per diode 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 20 1.000 t [s] Fig. 1 Forward current vs. voltage drop per diode 30 0.100 DC = 0.6 KW 0.8 KW [W] 1 KW 2 KW 4 KW 8 KW 0.5 0.4 60 0.33 IF(AV)M Graph 1* 10 1 80 [A] 0.17 0.08 40 20 0 0 0 10 20 0 25 50 75 100 125 150 175 0 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 Constants for ZthJC calculation: 0.8 ZthJC [K/W] 0.4 i Rth (K/W) ti (s) 1 0.05 0.001 2 0.14 0.030 3 0.25 0.060 4 0.35 0.130 5 0.31 0.920 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b