og 74c D 2924237 OOO? & i 2N 1595->2N 1599 TD5 - TD6 THYRISTORS T- 256-7] General purpose SCR suited for power supplies up to 400 Hz on resistive or inductive loads. @ VoRM = VRRM Up to 600 V. @ Glass passivated chips. @ High stability and reliability. ITIRMS) = 1.6 A/T, = goc b0V< = VDRM < 600V VRRM Thyristors 4 usage gnral pour des alimentations jusqu Case 400 Hz sur charges rsistives ou inductives. Boftier 1939 metal (CB-7) VpRM = VRRM Jusqua 600 V. @ Pastilles glassives. @ Grande stabilit des caractristiques. | i ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION Symbol Value Unit RMS on-state current IT(RMS} 1,6 A Courant efficace a Itat p * @T> = 80C Mean on-state current* IT(AV) 1 A Courant moyen a tat passant" @T, = 80C Non repetitive surge peak on-state current** ITSM 15,7 (t = 8,3 ms) A Courant non rptitif de surcharge crte ITSM 15 (t= 10 ms) A accidentelle 4 l'tat passant** @ Tj < 126C 12t for fusing (2t 1,12 (t = 10 ms) A2s Valeur de fa constante t @ Tj < 125C Critical rate of rise of on-state current"** . Vitesse critique de croissance du courant a tat passant*** difdt 50 Alus Storage and operating junction temperatures Tempratures extrmes de stockage et de Tstg 7 o ; 1s og jonction en fonctionnement J ~ Mer @Tj = 125C 2N 1595 2N 1596 2N 1597 2N 1598 2N 1599 TOS TD6 VpRM = VRRM (VY) 60 100 200 300 400 600 600 Thermal resistances . Rsistances thermiques Symbo! Value Unit Junction to case ; Jonction-boltier Rthij-c) 2 ecw Junction to ambient . Jonction-ambiante Fithi(j-a) 150 C/W *Single phase circuit, 180 conduction angle **Half-sine wave *Circuit monophas, angle de conduction 180 **Demi-onde sinusoidale an] = G = 5OmA tr< 0.5 us July 1984 - 1/2 THOMSON SEMICONDUCTORS 45, avenue de l'Europe - 78140 VELIZY - France f \ THOMSON Tl, :946.97.19 / Tlex : 698 866 F 123 @ COMPONENTSS G S-THOMSON 74Cc D B tse9237 QOO?K4? & J 2N1695>2N1599-TD5-TD6 ~ . 780 OT69T OD GATE CHARACTERISTICS (Maximum values) : 7. as- / CARAGTERISTIQUES DE GACHETTE (Valeurs maximales) . - / PGM = 1 W tp = 10 gs) IFGM = 100 mA (tp = 10 us) VRGM = 5V Paiav) = 0.1 W VFGM = 10 V (tp = 104s) . ELECTRICAL CHARACTERISTICS CARACTERISTIQUES ELECTRIQUES Value Symbol ~ Unit Test conditions _ min typ max ler 4 10 mA T= 25C Vp = 12V RL = 339 tp #20 ys Vet 07 | 15 v T= 25C Vp = 12V RL = 330 tp #20 us Vao 0,2 Vv T= 125C Vp = VorRM RL = 3,3 kN IH 10 mA Tj = 25C It = 100 mA Gate open VT 1,2 2. Vv Tj = 25C ITM =1A tp = 10 ms 'DRM 0,2 1 mA Tj = 125C VDRM specified IRRM 0,2 1 mA Tj = 125C VRRM specified tot 1 us Hi = eA digit : 0,1 A/us vo = VoRM | Tj = 125C IT=1A VR = 24V Vp = 0,87 VpaM tg 40 us din/dt = 30A/us dv/dt = 20 V/as Gate open dv/dt* 100 Vins Tj = 125C near sone up to 0,67 VoRm specified *For higher guaranted values, please consult us, CASE DESCRIPTION DESCRIPTION DU BOITIER @ 5,08 Pin 6,10 @ 7,75 Brochage 6,60 Y | 8,50 T t ! 1 f Cooling method : by convection (method A) | or conduction (method C) ! Marking : type number | Weight: 1,1 | Polarity : anode to case 12,70 min. | - | | @ 0,407 4 0,508 | bed TO 39 metal (CB-7) 2/2 THOMSON SEMICONDUCTORS 124