ECG055C InGaP HBT Gain Block Product Features * 20 dB Gain @ 1 GHz * +18 dBm P1dB @ 1 GHz GND 4 RF In RF Out 3 1 * +34 dBm OIP3@ 1 GHz * Single Voltage Supply * 3.4 dB Noise Figure * Internally matched to 50 * Robust 1000V ESD, Class 1C * Lead-free/green/RoHS-compliant SOT-363 package The ECG055C consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in low-cost, surface-mountable plastic lead-free/green/RoHS-compliant SOT-86 packages. A SOT-89 version is also available as the ECG055B. All devices are 100% RF and DC tested. 2 GND Function Input Output/Bias Ground Pin No. 1 3 2, 4 The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG055C will work for other various applications within the DC to 6 GHz frequency range such as CATV and fixed wireless. Applications Mobile Infrastructure CATV / FTTX WLAN / ISM RFID WiMAX / WiBro Specifications (1) Parameter Functional Diagram The ECG055C is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG055C typically provides 20 dB of gain, +34 dBm Output IP3, and +18 dBm P1dB. * DC - 6 GHz * * * * * Product Description Typical Performance (1) Units Min MHz MHz dB dBm dBm MHz dB dB dB dBm dBm dB V mA DC Operational Bandwidth Test Frequency Gain Output P1dB Output IP3 (2) Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Device Voltage Device Current 17 4.2 Typ 1000 19.7 +18 +34 2000 18 22 21 +18 +32 3.4 4.8 65 Max Parameter 6000 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure 19 5.3 Units MHz dB dB dB dBm dBm dB Typical 500 20.1 -35 -23 +18 +34 3.6 900 19.7 -26 -22 +18.1 +34 3.4 1900 18.2 -22 -21 +18.2 +32 3.4 2140 17.9 -22 -21 +17.8 +30.5 3.4 Not Recommended For New Designs Recommended replacement parts: AG403-86G 1. Test conditions unless otherwise noted: 25 C, Supply Voltage = +6 V, Rbias = 18 , 50 system. 2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature RF Input Power (continuous) Device Current Thermal Resistance, Rth Junction Temperature -65 to +150 C +12 dBm 150 mA 179C/W +160C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description ECG055C-G InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-86 package) Standard tape / reel size = 1000 pieces on a 7" reel Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 1 of 4 June 2011 ECG055C InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, Rbias = 18 , Icc = 65 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 20.3 -35 -23 +18.2 +33 3.4 500 20.1 -35 -23 +18 +33.5 3.6 900 19.7 -26 -22 +18.1 +34.5 3.4 1900 18.2 -22 -21 +18.2 +33.5 3.4 2140 17.9 -22 -21 +17.8 +32.9 3.4 2400 17.6 -22 -20 +17.8 +32 3.8 3500 16.1 -24 -17 +17.2 5800 13.7 -21 -11 1. Test conditions: T = 25 C, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18 , Icc = 65 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain 160 S11 18 16 14 S22 -10 120 Icc (mA) S 1 1 , S 2 2 (d B ) 20 G a in (d B ) Icc vs. Vde Return Loss 0 22 -20 -30 80 40 25C 0 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 -40 12 0 1 2 3 4 5 0 6 1 Frequency (GHz) 2 3 4 5 6 Vde (V) Frequency (GHz) Noise Figure OIP3 vs. Frequency 40 P1dB vs. Frequency 20 5.0 4.5 OIP3 (dBm) 35 30 P1dB (dBm) NF (dB) 4.0 3.5 3.0 25 18 16 2.5 25C -40C 85C 20 1 2 3 Frequency (MHz) 4 2.0 800 25C -40C 85C 14 1000 1200 1400 1600 1800 2000 1 Frequency (MHz) 2 3 Frequency (MHz) 4 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 4 June 2011 ECG055C InGaP HBT Gain Block Recommended Application Circuit Vcc Icc = 65 mA R4 Bias Resistor C4 Bypass Capacitor C3 0.018 F L1 RF Choke RF IN RF OUT ECG055 C2 Blocking Capacitor C1 Blocking Capacitor Reference Designator L1 C1, C2, C4 50 820 nH .018 F Recommended Component Values Frequency (MHz) 500 900 1900 2200 220 nH 68 nH 27 nH 22 nH 1000 pF 100 pF 68 pF 68 pF 2500 18 nH 56 pF Recommended Bias Resistor Values Supply R1 value Size Voltage 6V 18.5 ohms 0805 7V 33.8 ohms 1210 8V 49 ohms 1210 9V 65 ohms 2010 10 V 80 ohms 2010 12 V 111 ohms 2512 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R4 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 F chip capacitor Do Not Place 18 1% tolerance Size 0603 0603 0603 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. 0805 Typical Device S-Parameters S-Parameters (Vdevice = +4.8 V, ICC = 65 mA, T = 25C, calibrated to device leads) Freq (MHz) 50 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) -38.17 -30.35 -26.51 -23.32 -22.01 -21.87 -21.62 -23.63 -26.77 -31.76 -32.57 -24.49 -18.97 9.34 38.64 30.55 16.54 8.06 -3.80 -11.61 -13.22 -23.25 -20.76 122.50 133.61 125.72 20.30 20.11 19.67 19.00 18.39 17.62 16.91 16.27 15.65 15.09 14.65 14.16 13.73 178.31 161.09 143.04 126.43 111.18 96.71 83.83 71.31 59.48 47.94 36.34 24.39 13.11 -22.39 -22.33 -22.23 -22.09 -21.81 -21.55 -21.16 -20.78 -20.29 -19.79 -19.25 -18.78 -18.29 S12 (ang) 0.12 0.74 1.87 2.57 3.37 3.41 3.82 3.21 2.65 1.21 -0.79 -3.46 -6.40 S22 (dB) S22 (ang) -22.58 -23.00 -22.48 -21.21 -20.79 -19.71 -18.27 -17.28 -15.32 -14.24 -12.75 -11.56 -10.39 -1.41 -29.41 -50.33 -77.23 -101.82 -119.95 -141.35 -155.62 -170.83 174.50 163.59 150.73 140.55 Device S-parameters are available for download from the website at: http://www.triquint.com Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 4 June 2011 ECG055C InGaP HBT Gain Block ECG055C-G Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with a two-digit numeric lot code (shown as "XX") followed with an "S" designator on the top surface of the package. The obsolete tin-lead package is marked with a two-digit numeric lot code followed with a "Y" designator; it may also have been marked with a "Y" designator followed by a two-digit lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 4 June 2011