AH125 1/2 W High Linearity InGaP HBT Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA 3-pin SOT-89 Package Product Features Functional Block Diagram 400 - 3600 MHz +28 dBm P1dB +45 dBm Output IP3 16.2 dB Gain @ 2140 MHz 150 mA current draw +5 V Single Supply MTTF > 100 Years Lead-free/Green/RoHS-compliant SOT-89 Package Class 2 HBM ESD rating (>2kV) General Description GND 4 1 2 3 RF IN GND RF OUT Pin Configuration The AH125 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +45 dBm OIP3 and +28 dBm of compressed 1dB power while drawing 150 mA current. The AH125 is available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. Pin No. Symbol 1 Vbias 3 RFin 2,4 RFout/Vcc The AH125 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. Internal biasing allows the AH125 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations or repeaters. Ordering Information Part No. Description 1/2W High Linearity Amplifier AH125-89G Standard T/R size = 1000 pieces on a 7" reel. Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 1 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Parameter Min Case Temperature Tj for >106 hours MTTF -40 Rating Storage Temperature RF Input Power, CW, 50, T=25C Device Voltage -65 to 150C Input P10dB +6 V Typ Max Units +85 +200 C C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss W-CDMA Channel Power Output P1dB Output IP3 Noise Figure Quiescent Collector Current Thermal Resistance, JC Conditions Min Typ 400 14 At -50dBc ACLR, Note 1 Pout=+12 dBm/tone, f=1 MHz +41 130 2140 16.2 12 12 +19 +28 +45 4.4 150 Junction to case Max Units 3600 MHz MHz dB dB dB dBm dBm dBm dB mA C / W 18 170 64.3 Performance Summary Table Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Parameter Conditions Typical Frequency Gain Input Return Loss Output Return Loss W-CDMA Channel Power Output P1dB Output IP3 Noise Figure 920 20 20 9.9 At -50 dBc ACLR, Note 1 Note 2 1960 17 16 9 Units 2140 16.2 12 12 MHz dB dB dB +19 +19 +19 dBm +28.1 +47 7.7 +27.8 +47 4.6 +28.0 +45 4.4 dBm dBm dB Notes: 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz. 2. OIP3 is measured with two tones separated by 1 MHz. Measured at Pout=+17dBm/tone for 900 MHz, +14 dBm/tone for 1960 MHz, and +12 dBm/tone for 2140 MHz. Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 2 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Device Characterization Data Note: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. S-Parameters Test Conditions: VDEVICE=+5 V, ICQ=150 mA, T=+25C, unmatched 50 ohm system Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 -2.51 -6.65 -0.47 -0.50 -0.56 -0.65 -0.78 -0.82 -0.93 -0.93 -0.94 -0.91 -0.93 -0.90 -0.96 -1.07 -1.18 -1.18 -1.11 176.96 -179.55 -166.72 179.58 173.91 170.52 166.87 163.90 161.34 157.61 154.21 151.59 149.24 145.94 143.87 139.90 136.50 133.80 132.39 19.12 16.82 19.86 16.95 15.09 13.68 12.37 11.21 10.11 9.40 8.47 7.66 7.06 6.70 6.12 5.74 5.09 4.62 4.12 153.71 171.45 129.11 110.14 99.64 91.32 83.49 76.80 71.12 64.93 58.83 53.42 49.26 43.87 39.45 34.00 29.36 24.20 20.26 -33.85 -41.51 -32.54 -32.11 -32.29 -32.15 -32.04 -32.11 -31.97 -31.94 -31.97 -31.80 -32.04 -31.63 -31.18 -31.37 -31.25 -31.12 -31.25 -7.98 -51.50 37.90 15.12 6.66 2.53 -2.50 -4.03 -7.89 -9.93 -10.87 -14.20 -16.18 -16.91 -18.50 -23.47 -20.88 -27.12 -26.33 -4.58 -3.50 -6.46 -4.57 -4.14 -3.89 -3.71 -3.64 -3.70 -3.64 -3.54 -3.48 -3.67 -3.72 -3.54 -3.52 -3.70 -3.72 -3.64 -168.55 167.66 -173.90 -177.11 177.58 173.40 169.83 167.10 164.08 160.19 156.60 153.92 152.18 147.67 143.63 141.32 140.24 135.07 130.47 Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 3 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier R4 869-960 MHz Application Circuit C8 R1 R2 C2 C9 C1 C10 L1 C3 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of R2 is placed at 280 mil from AH125 RFout pin. (14.3 o at 920 MHz) 5. The edge of C9 is placed 35 mil from the edge of R2. (1.8o at 920 MHz) 6. The edge of R1 is placed at 100 mil from AH125 RFin pin. (5.1 o at 920 MHz) 7. The edge of C10 is placed 130 mil from the edge of R1. (6.6 o at 920 MHz) Typical Performance 869-960 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Frequency Gain Input Return Loss Output Return Loss ACLR Output P1dB Output IP3 Noise Figure Conditions 869 920 960 MHz Pout = +18 dBm, Note 1 20 14 10 -52 +27.4 +44 7.9 20 20 9.9 -52.5 +28.1 +47 7.7 20 22 9.9 -52 +27.9 +49 7.5 dB dB dB dBc dBm dBm dB Pout=+17 dBm/tone, f=1 MHz Notes: 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz. Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 4 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Performance Plots 869-960 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Input Return Loss vs. Frequency Gain vs. Frequency |S11| (dB) |S21| (dB) 21 20 19 Output Return Loss vs. Frequency 0 0 -5 -5 |S22| (dB) 22 -10 -15 +25C +85C -40C 18 840 860 880 900 920 940 Frequency (MHz) 960 -25 840 980 -15 -20 -20 -40C -10 860 880 +25C -40C +85C 900 920 940 Frequency (MHz) 960 -25 840 980 860 ACLR vs. Output Power over Frequency Gain vs. Temperature 22 880 +25C +85C 900 920 940 Frequency (MHz) 960 980 ACLR vs. Output Power over Temperature -40 -40 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -45 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW TLEAD=+25C -45 Freq.=920 MHz 20 -50 ACLR (dBc) ACLR (dBc) |S21| (dB) 21 -55 -60 -50 -55 -60 19 869 MHz 920 MHz -65 -65 960 MHz 869 MHz 18 -40 -15 10 35 Temperature (C) 60 85 15 OIP3 vs. Pout/Tone over Temperature 16 17 18 Output Power (dBm) -40C 19 14 20 OIP3 (dBm) OIP3 (dBm) 45 869 MHz 920 MHz 960 MHz -40C 11 12 13 14 15 16 Output Power per Tone (dBm) 17 18 10 11 12 13 14 15 16 Output Power per Tone (dBm) Current vs. Output Power 17 160 150 140 30 29 28 28 27 26 25 920 MHz -40C 960 MHz +25C 10 12 14 16 18 Output Power (dBm) Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc 880 20 22 900 920 Frequency (MHz) 940 960 26 24 22 20 +85C 869 MHz 24 130 +85C Output Power vs. Input Power 30 Output Power (dBm) P1dB (dBm) 170 869 MHz 860 18 P1dB vs. Frequency 180 +25C 35 35 10 45 40 +85C 35 20 50 40 +25C 19 1 MHz tone spacing Pout=+17dBm per tone TLEAD=+25C 1 MHz tone spacing 40 +85C OIP3 vs. Frequency 50 45 +25C 16 17 18 Output Power (dBm) 55 Freq.=920 MHz 1 MHz tone spacing -40C 15 OIP3 vs. Pout/Tone over Frequency 55 50 OIP3 (dBm) 960 MHz -70 14 55 Icq (mA) 920 MHz -70 920 MHz 960 MHz 18 860 880 900 920 Frequency (MHz) - 5 of 14 - 940 960 0 1 2 3 4 5 6 7 8 9 Input Power (dBm) Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Noise Figure vs. Frequency 10.0 NF (dB) 9.0 8.0 7.0 -40C +25C +85C 6.0 860 880 900 920 940 960 980 1000 Frequency (MHz) Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 6 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier R4 1805-1880 MHz Application Circuit C8 C4 C3 C20 R20 R1 C9 C1 C10 L1 Trace Cut R2 C2 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 250 mil from AH125 RFout pin. (25.5 o at 1845 MHz) 5. The edge of R1 is placed against the edge of C10. 6. The edge of C10 is placed at 30 mil from AH125 RFin pin. (3.1 o at 1845 MHz) 1.1 pF 2.4 pF Typical Performance 1805-1880 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Frequency 1805 1842 1880 MHz Gain Input Return Loss 17.8 9.5 18.2 16.5 18.1 17.0 dB dB Output Return Loss ACLR 9.4 8.4 7.8 dB Pout = +18 dBm, Note 1 Output P1dB Output IP3 Pout=+14 dBm/tone, f=1 MHz -51 +28 +44 -51 +27.9 +45 -49 +27.8 +43.5 dBc dBm dBm Conditions Notes: 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz. Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 7 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Performance Plots 1805-1880 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Gain vs. Frequency TLEAD=+25C 1 MHz tone spacing TLEAD=+25C 1 MHz tone spacing 18 17 16 -10 -15 -20 S11 1840 1860 Frequency (MHz) 1880 1900 -55 -30 1.80 S22 1805 MHz 1842 MHz 1880 MHz -65 1.82 1.84 1.86 Frequency (MHz) 1.88 1.90 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) OIP3 vs. Output Power per Tone P1dB vs. Frequency 30 48 TLEAD=+25C 1 MHz tone spacing 29 P1dB (dBm) 46 OIP3 (dBm) TLEAD=+25C -50 -60 -25 1820 W-CDMA 3GPP TM +64DPCH PAR=10.2dB @ 0.01% probability 3.84 MHz BW -45 ACLR (dBc) -5 Return Loss (dB) |S21| (dB) -40 0 19 15 1800 ACLR vs. Output Power Return Loss vs. Frequency 20 44 42 40 TLEAD=+25C 1 MHz tone spacing 28 27 26 25 1805 MHz 1842 MHz 1880 MHz 38 8 10 12 14 16 18 24 1820 Output Power/Tone (dBm) Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 8 of 14 - 1830 1840 1850 1860 Frequency (MHz) 1870 1880 Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier R4 2110-2170 MHz Application Circuit R1 C9 C1 C10 L1 C8 C4 C3 R2 C2 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 120 mils from AH125 RFout pin. (14.2 o at 2140 MHz) 5. The edge of C2 is placed at 280 mils from the edge of C9. (33.2 o at 2140 MHz) 6. The edge of C10 is placed at 60 mils from AH125 RFin pin. (7.1 o at 2140 MHz) 7. The edge of R1 is placed 10 mils from the edge of C10. (1.2 o at 2140 MHz) Typical Performance 2110-2170 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Frequency Gain Input Return Loss Output Return Loss ACLR Output P1dB Output IP3 Noise Figure 2110 2140 2170 MHz 16.1 10 13 16.2 12 12 16.3 15 11 dB dB dB Pout = +18 dBm -52 -52 -52 dBc Pout=+12 dBm/tone, f=1 MHz +28 +49 +28 +45 +28 +47 dBm dBm 4.3 4.4 4.4 dB Conditions Notes: 1. TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 9 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Performance Plots 2110-2170 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Input Return Loss Gain vs. Frequency |S11| (dB) |S21| (dB) 17 16 15 0 -5 -5 -10 -15 14 2.10 2.12 +25C +85C 2.14 2.16 Frequency (GHz) -40C 2.18 -25 2.10 2.20 2.12 +25C -40C +85C 2.14 2.16 Frequency (GHz) 2.18 -25 2.10 2.20 15 TLEAD=+25C -50 -55 -60 2110 MHz 2140 MHz 10 35 Temperature (C) 60 12 OIP3 vs. Output Power/Tone -40C 14 16 Output Power (dBm) 18 20 10 12 P1dB vs. Frequency 55 +25C +85C 14 16 Output Power (dBm) 18 20 Noise Figure vs. Frequency 30 TLEAD=+25C 1 MHz tone spacing 8 7 TLEAD=+25C 29 50 6 45 28 NF (dB) P1dB (dBm) OIP3 (dBm) -55 -65 10 85 2.20 -50 2170 MHz -65 -15 2.18 -60 2170 MHz 14 2.14 2.16 Frequency (GHz) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.3 dB @ 0.01% Probability 3.84 MHz BW -45 ACLR (dBc) ACLR (dBc) 16 +85C -40 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.3 dB @ 0.01% Probability 3.84 MHz BW -45 17 -40 2.12 +25C ACLR vs. Output Power -40 2140 MHz -15 ACLR vs. Output Power Gain vs. Temperature 18 2110 MHz -10 -20 -20 -40C |S21| (dB) Output Return Loss 0 |S22| (dB) 18 27 26 40 5 4 3 2 2110 MHz 2140 MHz 25 2170 MHz 35 8 9 10 11 12 13 14 15 Pout/Tone (dBm) Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc 16 17 18 24 2.11 1 2.12 2.13 2.14 2.15 Frequency (GHz) - 10 of 14 - 2.16 2.17 -40C 0 2.10 2.12 +25C 2.14 2.16 Frequency (GHz) +85C 2.18 2.20 Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier R4 2500-2700 MHz Application Circuit L1 C8 C4 C3 R2 C2 C9 R1 C10 C1 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. Distance from side edge of C10 to side edge of U1 pin 1 is 55 mils (7.9 at 2600 MHz). 5. Distance from end edge of R1 to side edge of U1 pin 1 is 110 mils (15.8 at 2600 MHz). 6. Distance from side edge of C9 to side edge of U1 pin 3 is 90 mils (13.0 at 2600 MHz). VCC R4 0 Ohms C3 22pF L1 RF Input J1 C1 0 Ohms R1 Z= 50 Ohm L=55 mils Z= 50 Ohm L=55 mils Z= 50 Ohm L=90 mils 1 3 U1 1pF 18nH 0805CS R1 R2 0 Ohms C9 0.6pF 2 C10 0.8pF C8 1uF C4 1000pF RF Output J2 22pF AH125-89PCB2600 Typical Performance 2500-2700 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Frequency Conditions Gain Input Return Loss Output Return Loss EVM Output P1dB Output IP3 Pout = +19 dBm Pout=+16 dBm/tone, f=1 MHz 2500 2600 2700 MHz 13.9 9.5 9.4 14.0 13.1 8.7 13.7 12.9 8.2 dB dB dB 1.5 +28 +49 1.25 +28 +48 1.3 +28 +47 % dBm dBm Notes: 1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 sub-channels, 5 MHz Carrier BW. Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 11 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Performance Plots 2500-2700 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit Return Loss vs. Frequency Gain vs. Frequency 15 5 TLEAD=+25C 13 12 11 -10 2.60 Frequency (GHz) 2.70 2.80 2 1 -20 2.40 S22 2.5 GHz 2.6 GHz 2.7 GHz 0 2.50 2.60 2.70 2.80 12 14 16 Frequency (GHz) 18 20 22 Output Power (dBm) OIP3 vs. Output Power/Tone EVM vs. Output Power 55 5 802.16-2004 O-FDMA, 64QAM-1/2 1024-FFT, 20 symbols and 30 subchannels 5 MHz Carrier BW TLEAD=+25C TLEAD=+25C 1 MHz tone spacing 50 OIP3 (dBm) 4 EVM (%) 3 -15 S11 2.50 802.16-2004 O-FDMA, 64QAM-1/2 T =+25C 1024-FFT, 20 symbols and 30 subchannels LEAD 5 MHz Carrier BW 4 -5 EVM (%) Return Loss (dB) Gain (dB) 14 10 2.40 EVM vs. Output Power 0 TLEAD=+25C 3 2 45 40 35 1 2.5 GHz 2.6 GHz 2.5 GHz 2.7 GHz 0 2.6 GHz 2.7 GHz 30 12 14 16 18 20 22 10 14 16 18 20 22 Output Power/Tone (dBm) Output Power (dBm) Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc 12 - 12 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Pin Configuration and Description GND 4 Pin No. 1 2 3 RF IN GND RF OUT Symbol Description 1 RF IN RF Input. Requires external match for optimal performance. External DC Block required. 2, 4 GND RF/DC Ground Connection 3 RFout / Vcc RF Output. Requires external match for optimal performance. External DC Block and supply voltage is required. Evaluation Board PCB Information Qorvo PCB 1071363 Material and Stack-up Nelco N-4000-13 r=3.7 typ. 0.014" 0.062" 0.006" Finished Board Thickness 1 oz. Cu top layer 1 oz. Cu inner layer Core 1 oz. Cu inner layer 0.014" Nelco N-4000-13 1 oz. Cu bottom layer 50 Ohm Lines: Width=28 mils Spacing=28 mils Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 13 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Package Marking and Dimensions Package Marking Product ID: AH125G Lot code: YXXX AH125G YXXX Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Dimension and tolerance formats conform to ASME Y14.4M-1994. 3. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. 4. Contact plating: NiPdAu PCB Mounting Pattern Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. 5. All dimensions are in millimeters (inches). Angles are in degrees. Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 14 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com AH125 1/2 W High Linearity InGaP HBT Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Caution! ESD-Sensitive Device Package lead plating: NiPdAu ESD Rating: Value: Test: Standard: Class 2 2000V to <4000V Human Body Model (HBM) JEDEC Standard JS-001-2012 ESD Rating: Value: Test: Standard: Class C3 Passes 2000V min Charged Device Model (CDM) JEDEC Standard JESD22-C101 RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating MSL Rating: 3 Test: +260C convection reflow Standard: JEDEC standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.triquint.com Email: customer.support@qorvo.com Tel: 877-800-8584 For information about the merger of RFMD and TriQuint as Qorvo: Web: www.qorvo.com For technical questions and application information: Email: sjcapplications.engineering@qorvo.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev D 01-25-16 (c) 2016 TriQuint Semiconductor, Inc - 15 of 14 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com