AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 1 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
3-pin SOT-89 Package
Applications
Repeaters
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
Ordering Information
Part No.
Description
AH125-89G
Standard T/R size = 1000 pieces on a 7” reel.
Product Features
400 − 3600 MHz
+28 dBm P1dB
+45 dBm Output IP3
16.2 dB Gain @ 2140 MHz
150 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant SOT-89 Package
Class 2 HBM ESD rating (>2kV)
General Description
The AH125 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +45 dBm OIP3 and +28 dBm of compressed 1dB
power while drawing 150 mA current. The AH125 is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
The AH125 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium
power, and high efficiency are required. Internal biasing
allows the AH125 to maintain high linearity over
temperature and operate directly off a single +5V supply.
This combination makes the device an excellent
candidate for transceiver line cards in current and next
generation multi-carrier 3G base stations or repeaters.
Pin Configuration
Pin No.
Symbol
1
Vbias
3
RFin
2,4
RFout/Vcc
Functional Block Diagram
RF IN GND RF OUT
GND
1
2
3
4
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 2 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Case Temperature
−40
+85
°C
Tj for >106 hours MTTF
+200
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−65 to 150°C
RF Input Power, CW, 50Ω, T=25°C
Input P10dB
Device Voltage
+6 V
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Parameter
Conditions
Min
Typ
Max
Units
400
3600
MHz
2140
MHz
14
16.2
18
dB
12
dB
12
dB
At -50dBc ACLR, Note 1
+19
dBm
+28
dBm
Pout=+12 dBm/tone, Δf=1 MHz
+41
+45
dBm
4.4
dB
130
150
170
mA
Junction to case
64.3
C / W
Performance Summary Table
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Parameter
Conditions
Typical
Units
920
1960
2140
MHz
20
17
16.2
dB
20
16
12
dB
9.9
9
12
dB
At -50 dBc ACLR, Note 1
+19
+19
+19
dBm
+28.1
+27.8
+28.0
dBm
Note 2
+47
+47
+45
dBm
7.7
4.6
4.4
dB
Notes:
1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz.
2. OIP3 is measured with two tones separated by 1 MHz.
Measured at Pout=+17dBm/tone for 900 MHz, +14 dBm/tone for 1960 MHz, and +12 dBm/tone for 2140 MHz.
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 3 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Device Characterization Data
Note:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in
the dashed red line.
S-Parameters
Test Conditions: VDEVICE=+5 V, ICQ=150 mA, T=+25°C, unmatched 50 ohm system
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
100
-2.51
176.96
19.12
153.71
-33.85
-7.98
-4.58
-168.55
300
-6.65
-179.55
16.82
171.45
-41.51
-51.50
-3.50
167.66
500
-0.47
-166.72
19.86
129.11
-32.54
37.90
-6.46
-173.90
700
-0.50
179.58
16.95
110.14
-32.11
15.12
-4.57
-177.11
900
-0.56
173.91
15.09
99.64
-32.29
6.66
-4.14
177.58
1100
-0.65
170.52
13.68
91.32
-32.15
2.53
-3.89
173.40
1300
-0.78
166.87
12.37
83.49
-32.04
-2.50
-3.71
169.83
1500
-0.82
163.90
11.21
76.80
-32.11
-4.03
-3.64
167.10
1700
-0.93
161.34
10.11
71.12
-31.97
-7.89
-3.70
164.08
1900
-0.93
157.61
9.40
64.93
-31.94
-9.93
-3.64
160.19
2100
-0.94
154.21
8.47
58.83
-31.97
-10.87
-3.54
156.60
2300
-0.91
151.59
7.66
53.42
-31.80
-14.20
-3.48
153.92
2500
-0.93
149.24
7.06
49.26
-32.04
-16.18
-3.67
152.18
2700
-0.90
145.94
6.70
43.87
-31.63
-16.91
-3.72
147.67
2900
-0.96
143.87
6.12
39.45
-31.18
-18.50
-3.54
143.63
3100
-1.07
139.90
5.74
34.00
-31.37
-23.47
-3.52
141.32
3300
-1.18
136.50
5.09
29.36
-31.25
-20.88
-3.70
140.24
3500
-1.18
133.80
4.62
24.20
-31.12
-27.12
-3.72
135.07
3700
-1.11
132.39
4.12
20.26
-31.25
-26.33
-3.64
130.47
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 4 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
869-960 MHz Application Circuit
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of R2 is placed at 280 mil from AH125 RFout pin. (14.3o at 920 MHz)
5. The edge of C9 is placed 35 mil from the edge of R2. (1.8o at 920 MHz)
6. The edge of R1 is placed at 100 mil from AH125 RFin pin. (5.1o at 920 MHz)
7. The edge of C10 is placed 130 mil from the edge of R1. (6.6o at 920 MHz)
Typical Performance 869-960 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Frequency
Conditions
869
920
960
MHz
Gain
20
20
20
dB
Input Return Loss
14
20
22
dB
Output Return Loss
10
9.9
9.9
dB
ACLR
Pout = +18 dBm, Note 1
-52
-52.5
-52
dBc
Output P1dB
+27.4
+28.1
+27.9
dBm
Output IP3
Pout=+17 dBm/tone, Δf=1 MHz
+44
+47
+49
dBm
Noise Figure
7.9
7.7
7.5
dB
Notes:
1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz.
L1
C1
C10
R1 R2
C9
C2
C3
C8
R4
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 5 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Performance Plots 869-960 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
18
19
20
21
22
840 860 880 900 920 940 960 980
|S21| (dB)
Frequency (MHz)
Gain vs. Frequency
-40°C
+25°C
+85°C
-25
-20
-15
-10
-5
0
840 860 880 900 920 940 960 980
|S11| (dB)
Frequency (MHz)
Input Return Loss vs. Frequency
-40°C
+25°C
+85°C
-25
-20
-15
-10
-5
0
840 860 880 900 920 940 960 980
|S22| (dB)
Frequency (MHz)
Output Return Loss vs. Frequency
-40°C
+25°C
+85°C
18
19
20
21
22
-40 -15 10 35 60 85
|S21| (dB)
Temperature (°C)
Gain vs. Temperature
869 MHz
920 MHz
960 MHz
-70
-65
-60
-55
-50
-45
-40
14 15 16 17 18 19 20
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Power over Frequency
869 MHz
920 MHz
960 MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
-70
-65
-60
-55
-50
-45
-40
14 15 16 17 18 19 20
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Power over Temperature
-40°C
+25°C
+85°C
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Freq.=920 MHz
35
40
45
50
55
10 11 12 13 14 15 16 17 18
OIP3 (dBm)
Output Power per Tone (dBm)
OIP3 vs. Pout/Tone over Temperature
-40°C
+25°C
+85°C
Freq.=920 MHz
1 MHz tone spacing
35
40
45
50
55
10 11 12 13 14 15 16 17 18
OIP3 (dBm)
Output Power per Tone (dBm)
OIP3 vs. Pout/Tone over Frequency
869 MHz
920 MHz
960 MHz
35
40
45
50
55
860 880 900 920 940 960
OIP3 (dBm)
Frequency (MHz)
OIP3 vs. Frequency
-40°C
+25°C
+85°C
1 MHz tone spacing
Pout=+17dBm per tone
130
140
150
160
170
180
10 12 14 16 18 20 22
Icq (mA)
Output Power (dBm)
Current vs. Output Power
869 MHz
920 MHz
960 MHz
24
25
26
27
28
29
30
860 880 900 920 940 960
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
-40°C
+25°C
+85°C
18
20
22
24
26
28
30
0 1 2 3 4 5 6 7 8 9
Output Power (dBm)
Input Power (dBm)
Output Power vs. Input Power
869 MHz
920 MHz
960 MHz
TLEAD=+25°C
1 MHz tone spacing
TLEAD=+25°C
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 6 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
6.0
7.0
8.0
9.0
10.0
860 880 900 920 940 960 980 1000
NF (dB)
Frequency (MHz)
Noise Figure vs. Frequency
-40°C
+25°C
+85°C
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 7 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
1805-1880 MHz Application Circuit
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C9 is placed at 250 mil from AH125 RFout pin. (25.5 o at 1845
MHz)
5. The edge of R1 is placed against the edge of C10.
6. The edge of C10 is placed at 30 mil from AH125 RFin pin. (3.1 o at 1845 MHz)
Typical Performance 1805-1880 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Frequency
Conditions
1805
1842
1880
MHz
Gain
17.8
18.2
18.1
dB
Input Return Loss
9.5
16.5
17.0
dB
Output Return Loss
9.4
8.4
7.8
dB
ACLR
Pout = +18 dBm, Note 1
-51
-51
-49
dBc
Output P1dB
+28
+27.9
+27.8
dBm
Output IP3
Pout=+14 dBm/tone, Δf=1 MHz
+44
+45
+43.5
dBm
Notes:
1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz.
L1
C1
C10
R1 R2
C9
C2
C3
C8
R4
C4
C20
R20
Trace Cut
2.4 pF
1.1 pF
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 8 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Performance Plots 1805-1880 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
15
16
17
18
19
20
1800 1820 1840 1860 1880 1900
|S21| (dB)
Frequency (MHz)
Gain vs. Frequency
-30
-25
-20
-15
-10
-5
0
1.80 1.82 1.84 1.86 1.88 1.90
Return Loss (dB)
Frequency (MHz)
Return Loss vs. Frequency
S11
S22
-65
-60
-55
-50
-45
-40
11 12 13 14 15 16 17 18 19 20 21
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Power
1805 MHz
1842 MHz
1880 MHz
W-CDMA 3GPP TM +64DPCH
PAR=10.2dB @ 0.01% probability
3.84 MHz BW
38
40
42
44
46
48
810 12 14 16 18
OIP3 (dBm)
Output Power/Tone (dBm)
OIP3 vs. Output Power per Tone
1805 MHz
1842 MHz
1880 MHz
24
25
26
27
28
29
30
1820 1830 1840 1850 1860 1870 1880
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
TLEAD=+25°C
TLEAD=+25°C
1 MHz tone spacing
TLEAD=+25°C
1 MHz tone spacing
TLEAD=+25°C
1 MHz tone spacing
TLEAD=+25°C
1 MHz tone spacing
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 9 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
2110-2170 MHz Application Circuit
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C9 is placed at 120 mils from AH125 RFout pin. (14.2 o at 2140 MHz)
5. The edge of C2 is placed at 280 mils from the edge of C9. (33.2 o at 2140 MHz)
6. The edge of C10 is placed at 60 mils from AH125 RFin pin. (7.1 o at 2140 MHz)
7. The edge of R1 is placed 10 mils from the edge of C10. (1.2 o at 2140 MHz)
Typical Performance 2110-2170 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Frequency
Conditions
2110
2140
2170
MHz
Gain
16.1
16.2
16.3
dB
Input Return Loss
10
12
15
dB
Output Return Loss
13
12
11
dB
ACLR
Pout = +18 dBm
-52
-52
-52
dBc
Output P1dB
+28
+28
+28
dBm
Output IP3
Pout=+12 dBm/tone, Δf=1 MHz
+49
+45
+47
dBm
Noise Figure
4.3
4.4
4.4
dB
Notes:
1. TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW
L1
C1
C10
R1 R2
C9
C2
C3
C8
R4
C4
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 10 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Performance Plots 2110-2170 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
14
15
16
17
18
2.10 2.12 2.14 2.16 2.18 2.20
|S21| (dB)
Frequency (GHz)
Gain vs. Frequency
-40°C
+25°C
+85°C
-25
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
|S11| (dB)
Frequency (GHz)
Input Return Loss
-40°C
+25°C
+85°C
-25
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
|S22| (dB)
Frequency (GHz)
Output Return Loss
-40°C
+25°C
+85°C
14
15
16
17
18
-40 -15 10 35 60 85
|S21| (dB)
Temperature (°C)
Gain vs. Temperature
2110 MHz
2140 MHz
2170 MHz
-65
-60
-55
-50
-45
-40
10 12 14 16 18 20
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Power
2110 MHz
2140 MHz
2170 MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
3.84 MHz BW
-65
-60
-55
-50
-45
-40
10 12 14 16 18 20
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Power
-40°C
+25°C
+85°C
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
3.84 MHz BW
35
40
45
50
55
8 9 10 11 12 13 14 15 16 17 18
OIP3 (dBm)
Pout/Tone (dBm)
OIP3 vs. Output Power/Tone
2110 MHz
2140 MHz
2170 MHz
24
25
26
27
28
29
30
2.11 2.12 2.13 2.14 2.15 2.16 2.17
P1dB (dBm)
Frequency (GHz)
P1dB vs. Frequency
0
1
2
3
4
5
6
7
8
2.10 2.12 2.14 2.16 2.18 2.20
NF (dB)
Frequency (GHz)
Noise Figure vs. Frequency
-40°C
+25°C
+85°C
TLEAD=+25°C
1 MHz tone spacing
TLEAD=+25°C
TLEAD=+25°C
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 11 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Typical Performance 2500-2700 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Frequency
Conditions
2500
2600
2700
MHz
Gain
13.9
14.0
13.7
dB
Input Return Loss
9.5
13.1
12.9
dB
Output Return Loss
9.4
8.7
8.2
dB
EVM
Pout = +19 dBm
1.5
1.25
1.3
%
Output P1dB
+28
+28
+28
dBm
Output IP3
Pout=+16 dBm/tone, Δf=1 MHz
+49
+48
+47
dBm
Notes:
1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 sub-channels, 5 MHz Carrier BW.
2500-2700 MHz Application Circuit
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. Distance from side edge of C10 to side edge of U1 pin 1 is 55 mils (7.9° at 2600
MHz).
5. Distance from end edge of R1 to side edge of U1 pin 1 is 110 mils (15.8° at 2600
MHz).
6. Distance from side edge of C9 to side edge of U1 pin 3 is 90 mils (13.0° at 2600
MHz).
L1
C1
C10
R1 R2
C9
C2
C3
C8
R4
C4
J1 J2
C1
RF Input RF Output
R1 R2 R1
Z= 50 Ohm
L=55 mils Z= 50 Ohm
L=55 mils
1pF 0 Ohms 22pF
0 Ohms C10
0.8pF C9
0.6pF
U1
AH125-89PCB2600
1
2
3
Z= 50 Ohm
L=90 mils
R4
VCC
L1
0 Ohms
C8
1uF
C4
1000pF
18nH
0805CS
C3
22pF
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 12 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Performance Plots 2500-2700 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
10
11
12
13
14
15
2.40 2.50 2.60 2.70 2.80
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
-20
-15
-10
-5
0
2.40 2.50 2.60 2.70 2.80
Return Loss (dB)
Frequency (GHz)
Return Loss vs. Frequency
S11
S22
0
1
2
3
4
5
12 14 16 18 20 22
EVM (%)
Output Power (dBm)
EVM vs. Output Power
2.5 GHz
2.6 GHz
2.7 GHz
802.16-2004 O-FDMA, 64QAM-1/2
1024-FFT, 20 symbols and 30 subchannels
5 MHz Carrier BW
0
1
2
3
4
5
12 14 16 18 20 22
EVM (%)
Output Power (dBm)
EVM vs. Output Power
2.5 GHz
2.6 GHz
2.7 GHz
802.16-2004 O-FDMA, 64QAM-1/2
1024-FFT, 20 symbols and 30 subchannels
5 MHz Carrier BW
30
35
40
45
50
55
10 12 14 16 18 20 22
OIP3 (dBm)
Output Power/Tone (dBm)
OIP3 vs. Output Power/Tone
2.5 GHz
2.6 GHz
2.7 GHz
TLEAD=+25°C
TLEAD=+25°C
TLEAD=+25°C
TLEAD=+25°C
TLEAD=+25°C
1 MHz tone spacing
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 13 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Pin Configuration and Description
Pin No.
Symbol
Description
1
RF IN
RF Input. Requires external match for optimal performance. External DC Block
required.
2, 4
GND
RF/DC Ground Connection
3
RFout / Vcc
RF Output. Requires external match for optimal performance. External DC Block
and supply voltage is required.
Evaluation Board PCB Information
Qorvo PCB 1071363 Material and Stack-up
50 Ohm Lines: Width=28 mils
Spacing=28 mils
RF IN GND RF OUT
GND
1
2
3
4
1 oz. Cu bottom layer
Nelco N-4000-13
Core
Nelco N-4000-13
εr=3.7 typ.
1 oz. Cu top layer
1 oz. Cu inner layer
1 oz. Cu inner layer
0.014"
0.014"
0.062" ± 0.006"
Finished Board
Thickness
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 14 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Package Marking and Dimensions
Package Marking
Product ID:
AH125G
Lot code: YXXX
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Dimension and tolerance formats conform to ASME Y14.4M-1994.
3. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
4. Contact plating: NiPdAu
PCB Mounting Pattern
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. RF trace width depends upon the PC board material and construction.
4. Use 1 oz. Copper minimum.
5. All dimensions are in millimeters (inches). Angles are in degrees.
AH125G
YXXX
AH125
½ W High Linearity InGaP HBT Amplifier
Datasheet: Rev D 01-25-16
- 15 of 14 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
ESD Rating: Class 2
Value: 2000V to <4000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JS-001-2012
ESD Rating: Class C3
Value: Passes ≥ 2000V min
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
Solderability
Compatible with both lead-free (maximum 260 °C reflow
temperature) and leaded (maximum 245 °C reflow
temperature) soldering processes.
Package lead plating: NiPdAu
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS directive
(Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
MSL Rating: 3
Test: +260°C convection reflow
Standard: JEDEC standard IPC/JEDEC J-STD-020
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for TriQuint products. The information contained herein
or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.triquint.com Tel: 877-800-8584
Email: customer.support@qorvo.com
For information about the merger of RFMD and TriQuint as Qorvo:
Web: www.qorvo.com
For technical questions and application information:
Email: sjcapplications.engineering@qorvo.com