VS-20ETS08S-M3, VS-20ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 20 A FEATURES * Glass passivated pellet chip junction Base cathode 2 * Meets MSL level 1, per LF maximum peak of 245 C * Designed and qualified JEDEC(R)-JESD 47 2 1 1 Anode 3 J-STD-020, according to * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode D2PAK (TO-263AB) APPLICATIONS * Input rectification PRIMARY CHARACTERISTICS IF(AV) 20 A * Vishay Semiconductors switches and output rectifiers which are available in identical package outlines VR 800 V, 1200 V VF at IF 1.1 V DESCRIPTION IFSM 300 A TJ max. 150 C Package D2PAK (TO-263AB) Circuit configuration Single The VS-20ETS...S-M3 rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 16.3 21 A VALUES UNITS 20 A Capacitive input filter TA = 55 C, TJ = 125 C common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VRRM 800/1200 V IFSM 300 A 1.1 V -40 to +150 C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 C mA VF 20 A, TJ = 25 C TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-20ETS08S-M3 800 900 VS-20ETS12S-M3 1200 1300 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 C, 180 conduction half sine wave 20 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 UNITS A A2s A2s Revision: 27-Oct-17 Document Number: 94889 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS08S-M3, VS-20ETS12S-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES UNITS 1.1 V 10.4 m 0.85 V 20 A, TJ = 25 C TJ = 150 C TJ = 25 C 0.1 VR = Rated VRRM TJ = 150 C mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA (1) Typical thermal resistance, case to heatsink TEST CONDITIONS TJ, TStg RthCS VALUES UNITS -40 to +150 C DC operation 1.3 For D2PAK version 62 Mounting surface, smooth, and greased 0.5 2 g 0.07 oz. minimum 6.0 (5.0) maximum 12 (10) kgf * cm (lbf * in) Approximate weight Mounting torque C/W 20ETS08S Case style D2PAK (TO-263AB) Marking device 20ETS12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note #AN-994 150 20ETS.. Series RthJC (DC) = 1.3 C/W 140 O 130 Conduction angle 120 110 100 30 60 90 120 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 150 20ETS.. Series RthJC (DC) = 1.3 C/W 140 130 O Conduction period 120 30 110 60 90 100 120 180 180 10 DC 90 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 35 Revision: 27-Oct-17 Document Number: 94889 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS08S-M3, VS-20ETS12S-M3 Series www.vishay.com 300 180 120 90 60 30 25 20 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 30 Vishay Semiconductors RMS limit 15 O 10 Conduction angle 20ETS.. Series TJ = 150 C 5 250 200 150 100 20ETS.. Series 0 50 0 4 8 12 20 16 24 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 35 300 DC 180 120 90 60 30 30 25 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 20 RMS limit 15 O 10 Conduction period 20ETS.. Series TJ = 150 C 5 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 250 200 150 100 20ETS.. Series 50 0 0 5 10 15 20 0.01 25 0.1 1 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 1000 TJ = 25C 100 TJ = 150C 10 20ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forwad Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 27-Oct-17 Document Number: 94889 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS08S-M3, VS-20ETS12S-M3 Series www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 20ETS.. Series 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 20 E T S 12 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration 4 - Package: TRL -M3 8 9 E = single T = D2PAK (TO-263AB) 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - 08 = 800 V 12 = 1200 V None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free Revision: 27-Oct-17 Document Number: 94889 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS08S-M3, VS-20ETS12S-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETS08S-M3 50 1000 Antistatic plastic tube VS-20ETS08STRR-M3 800 800 13" diameter reel VS-20ETS08STRL-M3 800 800 13" diameter reel VS-20ETS12S-M3 50 1000 Antistatic plastic tube VS-20ETS12STRR-M3 800 800 13" diameter reel VS-20ETS12STRL-M3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 SPICE model www.vishay.com/doc?95409 Revision: 27-Oct-17 Document Number: 94889 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC(R) outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0 to 8 MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC(R) outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000