VS-20ETS08S-M3, VS-20ETS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 1Document Number: 94889
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Surface Mount Input Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
The VS-20ETS...S-M3 rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
PRIMARY CHARACTERISTICS
IF(AV) 20 A
VR800 V, 1200 V
VF at IF1.1 V
IFSM 300 A
TJ max. 150 °C
Package D2PAK (TO-263AB)
Circuit configuration Single
3
Anode
1
Anode
Base
cathode
2
D2PAK (TO-263AB)
1
2
3
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W 16.3 21 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 20 A
VRRM 800/1200 V
IFSM 300 A
VF20 A, TJ = 25 °C 1.1 V
TJ-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM AT 150 °C
mA
VS-20ETS08S-M3 800 900 1
VS-20ETS12S-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 316 A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 2Document Number: 94889
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 20 A, TJ = 25 °C 1.1 V
Forward slope resistance rtTJ = 150 °C 10.4 m
Threshold voltage VF(TO) 0.85 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM
0.1 mA
TJ = 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 1.3
°C/W
Maximum thermal resistance,
junction to ambient RthJA (1) For D2PAK version 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth, and greased 0.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6.0 (5.0) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK (TO-263AB) 20ETS08S
20ETS12S
10
120
110
100
130
140
150
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
46821012
20 22
14 16 18
0
30° 60° 90° 120°
180°
20ETS.. Series
RthJC (DC) = 1.3 °C/W
Conduction angle
Ø
90
140
150
130
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
1051520
30 35
25
0
DC
30° 60°
90°
120°
180°
20ETS.. Series
RthJC (DC) = 1.3 °C/W
Ø
Conduction period
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 3Document Number: 94889
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
0
5
20
25
30
15
10
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
420 24
81216
0
RMS limit
180°
120°
90°
60°
30°
20ETS.. Series
TJ = 150 °C
Conduction angle
Ø
0
30
35
25
20
15
10
5
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20 25
51015
0
DC
180°
120°
90°
60°
30°
RMS limit
20ETS.. Series
TJ = 150 °C
Ø
Conduction period
50
300
250
200
150
100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulse (N)
10 100
1
20ETS.. Series
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
50
300
250
200
150
100
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.1 1
0.01
20ETS.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
1
10
100
1000
Instantaneous Forward Current (A)
Instantaneous Forwad Voltage (V)
1.00.5 1.5 2.0 3.5 4.0
2.5 3.0
0
TJ = 25°C
TJ = 150°C
20ETS.. Series
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 4Document Number: 94889
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08 20ETS.. Series
2- Current rating (20 = 20 A)
3- Circuit configuration
4- Package:
T = D2PAK (TO-263AB)
S = surface mountable
5- Type of silicon:
S = standard recovery rectifier
6- Voltage code x 100 = VRRM
7-
8- None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
E = single
08 = 800 V
12 = 1200 V
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 20 E T S 12 S TRL -M3
- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 5Document Number: 94889
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20ETS08S-M3 50 1000 Antistatic plastic tube
VS-20ETS08STRR-M3 800 800 13" diameter reel
VS-20ETS08STRL-M3 800 800 13" diameter reel
VS-20ETS12S-M3 50 1000 Antistatic plastic tube
VS-20ETS12STRR-M3 800 800 13" diameter reel
VS-20ETS12STRL-M3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96164
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96424
SPICE model www.vishay.com/doc?95409
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 13-Jul-17 1Document Number: 96164
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC® outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
(3)
(3)
View A - A
(E)
(D1)
E1
Legal Disclaimer Notice
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Revision: 01-Jan-2019 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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