CMS01 TOSHIBA Schottky Barrier Diode CMS01 DC-DC Converters Radio-Frequency Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices * * * Repetitive peak reverse voltage Average forward current Peak forward voltage * Suitable for high-density board assembly due to the use of a small Toshiba Nickname: M-FLATTM Unit: mm : VRRM = 30 V : IF (AV) = 3.0 A : VFM = 0.37 V (max) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF (AV) 3.0 (Note 1) A IFSM 40 (50 Hz) A JEDEC Junction temperature Tj -40 to 125 C JEITA Storage temperature Tstg -40 to 150 C TOSHIBA Non-repetitive peak forward surge current Note 1: T = 68.6C: Rectangular waveform ( = 180), VR = 15 V 3-4E1S Weight: 0.023 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol Thermal resistance (junction to lead) Min Typ. Max VFM (1) IFM = 0.5 A (pulse test) 0.25 VFM (2) IFM = 1.0 A (pulse test) 0.27 VFM (3) IFM = 3.0 A (pulse test) 0.33 0.37 IRRM (1) VRRM = 5 V (pulse test) 0.15 IRRM (2) VRRM = 30 V (pulse test) 1.8 5.0 VR = 10 V, f = 1 MHz 190 Device mounted on a ceramic board board size : 50 mm x 50 mm soldering land size : 2 mm x 2 mm board thickness : 0.64 mm 60 Device mounted on a glass-epoxy board board size : 50 mm x 50 mm soldering land size : 6 mm x 6 mm board thickness : 1.6 mm 135 16 Cj Thermal resistance (junction to ambient) Test Condition Rth (j-a) Rth (j-) Unit V mA pF C/W Start of commercial production 1 2000-07 2018-06-28 CMS01 Marking Abbreviation Code Part No. S1 CMS01 Land pattern dimensions for reference only 2.1 Unit: mm 1.4 3.0 1.4 Handling Precaution 1) Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when voltage is applied. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a device at low temperature. IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 100C. When using this device, take the margin into consideration by using an allowable T max - IF(AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a Tj of below 100C. 3) Thermal resistance between junction and ambient fluctuates depending on the device's mounting condition. When using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-06-28 CMS01 I F - VF PF (AV) - IF (AV) 100 1.4 (A) Average forward power dissipation PF (AV) (W) DC Tj = 125C Forward current IF 10 75C 25C 1 1.2 = 180 1.0 = 120 0.8 = 60 0.6 Rectangular waveform 0.4 0 0.2 Pulse test 0.1 0 0.1 0.2 0.3 0.4 Forward voltage 0.5 0.6 VF (V) 0.7 0 0 0.8 0.6 1.2 1.8 2.4 3.0 Average forward current T max - IF (AV) 3.6 4.2 IF (AV) 4.8 (A) Cj - VR 140 (typ.) 1000 f = 1 MHz Ta = 25C 120 (pF) DC Cj 100 = 180 80 Junction capacitance Rectangular waveform 60 = 120 40 0 360 IF (AV) Conduction angle: VR = 15 V = 60 20 0 0 0.6 1.2 1.8 2.4 3.0 Average forward current 3.6 IF (AV) 4.2 100 4.8 10 1 (A) 10 100 Reverse voltage VR (V) I R - Tj 50 (typ.) 1000 Pulse test f = 50 Hz Ta = 25C (mA) 40 Reverse current IR (A) Repetitive peak forward current Repetitive peak forward current IFRM Maximum allowable lead temperature T max (C) 360 Conduction angle: 30 20 10 100 VR = 30 V 10 VR = 20 V VR = 15 V VR = 10 V 1 VR = 5 V VR = 3 V 0 1 0.1 10 100 0 Number of cycles 20 40 60 80 Junction temperature Tj 3 100 120 140 (C) 2018-06-28 CMS01 PR (AV) - VR (typ.) 14 Average reverse power dissipation PR (AV) (W) Rectangular waveform 12 360 0 DC 10 VR 8 300 Conduction angle: Tj = 125C 240 6 180 4 120 2 60 0 0 10 20 Reverse voltage VR 30 (V) Transient thermal resistance rth (j-a) (C/W) rth (j-a) - t 500 100 Device mounted on a glass-epoxy board: board size: 50 mm x 50 mm Soldering land size: 2.1 mm x 1.4 mm board thickness: 1.6 mm Device mounted on a glass-epoxy board: board size: 50 mm x 50 mm Soldering land size: 6 mm x 6 mm board thickness: 1.6 mm 10 Device mounted on a ceramic board: board size: 50 mm x 50 mm Soldering land: size 2 mm x 2 mm board thickness: 0.64 mm 1 0.5 0.001 0.01 0.1 1 10 100 1000 Time t (s) 4 2018-06-28 CMS01 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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