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TO SHIBA Schottky Barrier Diode
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DC-DC Converters
Radio-Frequency Rectification in Switching Regulators
Reverse-Current Protection in Mobile Devices
• Repetitive peak reverse voltage : VRRM = 30 V
• Average forward current : IF (AV) = 3.0 A
• Peak forward voltage : VFM = 0.37 V (max)
• Suitable for high-density board assembly due to the use of a small
Toshiba Nickname: M−FLATTM
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse vol t age VRRM 30 V
Average forward current IF (AV) 3.0 (Note 1) A
Non-repetitive peak forward surge current IFSM 40 (50 Hz) A
Junction temperature Tj −40 to 125 °C
Storage temperature Tstg −40 to 150 °C
Note 1: Tℓ = 68.6°C: Rectangular waveform (α = 180°), VR = 15 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Peak forward voltage
VFM (1) IFM = 0.5 A (pulse test) 0.25
V
VFM (2) IFM = 1.0 A (pulse test) 0.27
VFM (3) IFM = 3.0 A (pulse test) 0.33 0.37
Repetitive peak reverse current IRRM (1) VRRM = 5 V (pulse test) 0.15 mA
IRRM (2) VRRM = 30 V (pulse test) 1.8 5.0
Junction capacitance Cj VR = 10 V, f = 1 MHz 190 pF
Thermal resistanc e
(juncti on to ambient)
Rth (j-a)
Device mounted on a ceramic board
board size : 50 mm × 50 mm
soldering land size : 2 mm × 2 mm
board thickness : 0.64 mm
60
°C/W
Device mounted on a glass-epoxy board
board size : 50 mm × 50 mm
soldering land size : 6 mm × 6 mm
board thickness : 1.6 mm
135
Thermal resistanc e (junction to lead) Rth (j-ℓ) 16
Unit
: mm
JEDEC ―
JEITA ―
TOSHIBA 3-4E1S
Weight: 0.023 g (typ.)
Start of commercial production
2000-07
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Marking
Abbreviation Code Part No.
S1 CMS01
Land pattern dimensions for r eference only
Handling Preca ution
1) Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
This device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when
voltage is applied. Please take forward and reverse loss into consideration during design.
2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IF(AV) and Tj be below 100°C. When using this device, take the margin into consideration by
using an allowable Tℓ max - IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 100°C.
3) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition.
When using a device, please design a circuit board and a soldering land size to match the appropriate thermal
resistance value.
4) For other des ign con si der ations, see the Toshiba website.
3.0
1.4
2.1
1.4
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Forward voltage VF (V)
I
F
– V
F
Forward current I
F
(A)
Average forward current IF (AV) (A)
P
F (AV)
– I
F (AV)
Average forward power dis sipat i on
P
F (AV)
(W)
Average forward current IF (AV) (A)
Tℓ max – I
F (AV)
Maximum allowable lead temperature
Tℓ max (°C)
Number of cycles
Repetitive peak forward current
Repetitive peak forward current I
FRM
(A)
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
1
10
100
25°C
Tj = 125°C
75°C
0.6 0 1.2 1.8 3.0 3.6
1.4
0.6
0
0.2
0.4
0.8
1.0
2.4 4.2 4.8
1.2
α = 120°
α = 60°
α = 180°
DC
360°
0°
α
Rectangular
waveform
Conduction angle: α
0.6 0 1.2 1.8 3.0 3.6
140
60
0
20
40
80
100
2.4 4.2 4.8
120
α = 60°
α = 120°
α = 180°
DC
Conduction angle: α
VR = 15 V
360°
0°
α
Rectangular
waveform
I
F (AV)
Pulse test
Junction c a pacitanc e C
j
(pF)
Reverse voltage VR (V)
C
j
– V
R
(typ.)
10
1
10
100
100
1000
f = 1 MHz
Ta = 25°C
Reverse current I
R
(mA)
Junction temperature T
j
(°C)
I
R
– T
j
(typ.)
0
1 10 100
10
20
30
40
50
f = 50 Hz
Ta = 25°C
0.1
0 20 40 60 80 100 120 140
1
10
100
1000
Pulse test
VR = 3 V
VR = 5 V
VR = 10 V
VR = 15 V
VR = 20 V
VR = 30 V
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Average reverse power dis sipat i on
P
R (AV)
(W)
Reverse voltage V
R
(V)
PR (AV) – VR (typ.)
Transient thermal resistance rth (j-a) (°C/W)
Time t (s)
r
th (j-a)
– t
0
0 10 20 30
2
4
6
8
10
12
14
DC
60°
120°
180°
240°
300°
Rectangular
waveform
360°
0°
Conduction angle: α
Tj = 125°C
VR
α
0.5
0.001 0.01 0.1 1 10 100 1000
1
10
100
500
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 2.1 mm × 1.4 mm
board thickness: 1.6 mm
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 6 mm × 6 mm
board thickness: 1.6 mm
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: size 2 mm × 2 mm
board thickness: 0.64 mm
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