VESD08-02V-G-08 - Vishay [Semiconductors]

VESDxx-02V

www.vishay.com Vishay Semiconductors

Rev. 1.1, 20-Jun-12 1Document Number: 83367

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Single ESD-Protection Diode in SOD-523

MARKING (example only)

Bar = cathode marking

X = date code

Y = type code (see table below)

FEATURES

• Single-line ESD-protection

• Low leakage current

• ESD-immunity acc. IEC 61000-4-2

± 8 kV contact discharge

± 15 kV air discharge

•e3 - Sn

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

19344

20278

20279

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL

(8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY

VESD01-02V VESD01-02V-G-08 3000 3000

VESD03-02V VESD03-02V-G-08 3000 3000

VESD05-02V VESD05-02V-G-08 3000 3000

VESD08-02V VESD08-02V-G-08 3000 3000

VESD12-02V VESD12-02V-G-08 3000 3000

PACKAGE DATA

DEVICE NAME PACKAGE

NAME

TYPE

CODE WEIGHT MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE

SENSITIVITY LEVEL

SOLDERING

CONDITIONS

VESD01-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

VESD03-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

VESD05-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

VESD08-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

VESD12-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

VESDxx-02V

www.vishay.com Vishay Semiconductors

Rev. 1.1, 20-Jun-12 2Document Number: 83367

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ABSOLUTE MAXIMUM RATINGS VESD01-02V

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 7A

Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 63 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD

± 8 kV

Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature Tstg - 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS VESD03-02V

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 9A

Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 108 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD

± 8 kV

Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature Tstg - 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS VESD05-02V

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 6A

Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 120 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD

± 8 kV

Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature Tstg - 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS VESD08-02V

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 4A

Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 120 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD

± 8 kV

Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature Tstg - 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS VESD12-02V

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 2A

Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 25 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD

± 8 kV

Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature Tstg - 55 to + 150 °C

VESDxx-02V

www.vishay.com Vishay Semiconductors

Rev. 1.1, 20-Jun-12 3Document Number: 83367

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ELECTRICAL CHARACTERISTICS VESD01-02V

(Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel --1lines

Reverse stand-off voltage Max. reverse working voltage VRWM --1V

Reverse voltage at IR = 100 μA VR1--V

Reverse current at VR = 1 V IR- - 100 μA

Reverse breakdown voltage at IR = 1 mA VBR 1.5 - - V

Reverse clamping voltage at IPP (see fig. 1) VC-9-V

Capacitance at VR = 0 V; f = 1 MHz CD-180- pF

ELECTRICAL CHARACTERISTICS VESD03-02V

(Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel --1lines

Reverse stand-off voltage Max. reverse working voltage VRWM --3V

Reverse voltage at IR = 20 μA VR3--V

Reverse current at VR = 3 V IR- - 20 μA

Reverse breakdown voltage at IR = 1 mA VBR 4--V

Reverse clamping voltage at IPP (see fig. 1) VC-12- V

Capacitance at VR = 0 V; f = 1 MHz CD-110- pF

ELECTRICAL CHARACTERISTICS VESD05-02V

(Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel --1lines

Reverse stand-off voltage Max. reverse working voltage VRWM --5V

Reverse voltage at IR = 0.1 μA VR5--V

Reverse current at VR = 5 V IR--0.1μA

Reverse breakdown voltage at IR = 1 mA VBR 6.5 - - V

Reverse clamping voltage at IPP (see fig. 1) VC-20- V

Capacitance at VR = 0 V; f = 1 MHz CD-55-pF

ELECTRICAL CHARACTERISTICS VESD08-02V

(Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel --1lines

Reverse stand-off voltage Max. reverse working voltage VRWM --8V

Reverse voltage at IR = 0.1 μA VR8--V

Reverse current at VR = 8 V IR--0.1μA

Reverse breakdown voltage at IR = 1 mA VBR 9--V

Reverse clamping voltage at IPP (see fig. 1) VC-30- V

Capacitance at VR = 0 V; f = 1 MHz CD-35-pF

ELECTRICAL CHARACTERISTICS VESD12-02V

(Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected Nchannel --1lines

Reverse stand-off voltage Max. reverse working voltage VRWM --12V

Reverse voltage at IR = 0.1 μA VR12 - - V

Reverse current at VR = 12 V IR--0.1μA

Reverse breakdown voltage at IR = 1 mA VBR 14 - - V

Reverse clamping voltage at IPP (see fig. 1) VC-25- V

Capacitance at VR = 0 V; f = 1 MHz CD-30-pF

VESDxx-02V

www.vishay.com Vishay Semiconductors

Rev. 1.1, 20-Jun-12 4Document Number: 83367

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (Inches): SOD-523

foot print recommendation:

Rev. h - Date: 13. Oct. 2010

16864

Document no.: S8-V-3880.02-001 (4)

0.4 (0.016)

1.45 (0.057)

0.35 (0.014)

1.3 (0.051)

1.1 (0.043)

0.35 (0.014)

0.18 (0.007)

1.7 (0.067)

1.5 (0.059)

0.20 (0.008)

0.08 (0.003)

0.9 (0.035)

0.7 (0.028)

0.5 (0.020)

0.1 (0.004) max.

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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