T4-LDS-0236, Rev. 1 (11960) ©2011 Microsemi Corporation Page 1 of 5
2N2944A – 2N2946A
Availa ble on
commercial
versions
PNP Silicon Small Signal Transistor
Qualified per MIL-PRF-19500/382
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This 2N2944A through 2N2946A PNP silicon transistor device is military qualified up to a
JANTXV level for high-reliability applications. Microsemi also offers numerous other products
to meet higher and lower power voltage regulation applications.
TO-46 (TO-206AB)
Package
Also available in:
UB package
(surface mount)
2N2944AUB – 2N2946AUB
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N2944A thru 2N2946A series.
• JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/382 available.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Low profile met al can package.
• ESD to Class 3 per MIL-STD-750, method 1020.
MAXIMUM RATINGS @ +25 oC un less specif ied oth e r wise .
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Resi stan ce Jun cti on-to-Ambient
RӨJA
435
oC/W
Collector Current (dc)
IC
-100
mA
Emitter to Base voltage (static), 2N2944A
collector open 2N2945A
2N2946A
VEBO -15
-25
-40
V
Collector to Base voltage (static), 2N2944A
emitter open 2N2945A
2N2946A
VCBO -15
-25
-40
V
Collector to Emitter voltage (static), 2N2944A
base open 2N2945A
2N2946A
VCEO -10
-20
-35
V
Emitter to Collector voltage 2N2944A
2N2945A
2N2946A
VECO -10
-20
-35
V
Total Power Dissipation, all terminals @ TA = +25 oC (1)
PT
400
mW
Notes: 1. Derate linearly 2.30 mW /oC above TA = +25 oC.
T4-LDS-0236, Rev. 1 (11960) ©2011 Microsemi Corporation Page 2 of 5
2N2944A – 2N2946A
• CASE: Nickel plated kovar, gl ass seals.
• TERMINALS: Gold plating over nickel, solder dipped, kovar.
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: 0.234 grams.
• See Package Dimensions on last page.
JAN 2N2944A (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS C ompliant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IB
Base current (dc).
IE
Emitter current (dc).
VCB
Collector to base voltage (dc).
VEB
Emitter to base voltage (dc).
V(BR)
Minim um Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
T4-LDS-0236, Rev. 1 (11960) ©2011 Microsemi Corporation Page 3 of 5
2N2944A – 2N2946A
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS:
Collector-Emitter Breakdown Voltage
IC = -10 µA
2N2944A
2N2945A
2N2946A
V(BR)CEO
-10
-20
-35
V
Emitter-Collector Breakdown Voltage
IE = -10 µA, IB = 0
2N2944A
2N2945A
2N2946A
V(BR)ECO
-10
-20
-35
V
Collector-Base Cutoff Current
VCB = -15 V
VCB = -25 V
VCB = -40 V
2N2944A
2N2945A
2N2946A
I
CBO
10
10
10
µA
Emitter-Base Cutoff Current
VEB = -12 V
VEB = -20 V
VEB = -32 V
2N2944A
2N2945A
2N2946A
I
EBO
-0.1
-0.2
-0.5
ηA
ON CHARACTERISTICS: (1)
Forward-Current Transfer Ratio
IC = -1.0 mA, VCE = -0.5 V
2N2944A
2N2945A
2N2946A
h
FE
100
70
50
Forward-Current Transfer Ratio (inverted
IE = -200 µA, VEC = -0.5 V
connection)
2N2944A
2N2945A
2N2946A
hFE(inv)
50
30
20
Emitter-Collector Offset Voltage
IB = -200 µA, IE = 0
IB = -1.0 mA, IE = 0
IB = -2.0 mA, IE = 0
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
VEC(ofs)
-0.3
-0.5
-0.8
-0.6
-1.0
-2.0
-1.0
-1.6
-2.5
mV
DYNAMIC CHARACTERISTICS:
Emitter-Collector On-State Resistance
IB = -100 µA, IE = 0, Ie = 100 µA ac (rms)
f = 1.0 kHz
IB = -1.0 mA, IE = 0, Ie = 100 µA ac (rms)
f =1.0 kHz
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
r
ec(on)
10
12
14
4.0
6.0
8.0
Ω
Magnitude of Small-Signal Forward
Current Transfer Ratio
IC = -1.0 mA, VCE = -6.0V, f = 1.0 MHz
2N2944A
2N2945A
2N2946A
|hfe|
15
10
5.0
55
55
55
Output Capacitance
VCB = -6.0 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
C
obo
10
pF
Input Capacitance
VEB = -6.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
C
ibo
6.0
pF
(1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%.
T4-LDS-0236, Rev. 1 (11960) ©2011 Microsemi Corporation Page 4 of 5
2N2944A – 2N2946A
TA (oC) Ambient Temperature
FIGURE 1 – Temperature-Power Derating Curve
Maximum DC Operation Rating (mW )
T4-LDS-0236, Rev. 1 (11960) ©2011 Microsemi Corporation Page 5 of 5
2N2944A – 2N2946A
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge.
6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
7. Lead number three is electrically connected to case.
8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
9. Symbol r applied to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
11. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
Ltr.
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.065
.085
1.65
2.16
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
5
LD
.016
.021
0.41
0.53
LL
.500
1.750
12.70
44.45
6
LU
.016
.019
0.41
0.48
6
L1
.050
1.27
6
L2
.250
6.35
6
Q
.040
1.02
3
TL
.028
.048
0.71
1.22
8
TW
.036
.046
0.91
1.17
4
r
.010
0.25
9
α
45° TP
45° TP
5