Ordering number: EN 199J l_ 2S9B544/25D400 PNP/NPN Epitaxial Planar Silicon Transistors No.199J Low-Frequency Power Amp, Electronic Governor Applications ('): 2SB544 ; Absolute Maximum Ratings at Ta= 25C unit Collector to Base Voltage Vcpo: ()25 Vv Collector to Emitter Voltage Vcro ()25 Vv Emitter to Base Voltage VEBO . (-)5 v Collector Current Ic ()1 A Collector Current(Pulse) Icp (-)2 A Collector Dissipation Pc 900 mW Junction Temperature Tj 150 32C Storage Temperature Tstg 55to+150 C Electrical Characteristics at Ta = 25C min typ max unit Collector CutoffCurrent Icgo Vop=()20V In=0 ()1.0 pA Emitter CutoffCurrent Ippo Vep=()4V,Ic=0 ()1.0 pA DC Current Gain hpg(1) Vcr =()2V,I=()50mA 60% 560% hpg(2) Ver =()2V JIo=()IA 30 Gain-Bandwidth Product fr Vor =()10V Ic=()50mA 180 MHz Output Capacitance Cob Vcop=()10V,f=1MHz (25) pF -15 C-E Saturation Voltage Vonvsat) Ic=()500mA, Ig =()50mA (-0.15) (0.7) Vv . 0.1 0.3 B-E Saturation Voltage Veprisat) Ic=()500mA, Ig =()50mA ()0.85 ()1.2 Vv C-B Breakdown Voltage Viprycpo IJIco=()10pA,Ip=0 ()25 : Vv: ' C-E Breakdown Voltage Vierpceo Ic=()1mA,Rge= ()25 vi. E-B Breakdown Voltage Vipryepo Ip=()10pAjJIc=0 (~)5 Vv * : The 25B544/2SD400 are classified by 50mA hrg as follows : [ 60 D 120 | 100 200 | 160 F 320 | 280 G 560 Case Outline 2006A (unit : mm) 30 os ) EIAJ: SC~51 B: Base SANYO: MP C: Collector E: Emitter Specifications and information herein are subject to change. without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chame, Ueno, Taito-ku, TOKYO, 110 JAPAN 4280MO/5157AT/D174MW,TS No.199-1/3 Mi 7997076 OO1571b 1495 2532SB544/2SD400 -1 < 0.8 | 2 3 g 0. 5 3 2 -0.4 ue 2 3 SO -0.2 Collector Current,I; A 2SB544 Ic VCE la=0 2 3 ~4 Collector to Emitter Voltage, Vcz V 288544 0 0.2 DC Current Gain,hpg 10 5 288544 Vor=2V 0.07 23 57 Ic VBE ~0.4 -0.6 -0.8 1.0 Base to Emitter Voltage, Vgp V hre | Tamz5y 1.2 235 7_yo 2 0.1 Collector Current,Ig A 3 fr_ Ic 8 238544 T of Veem10V Ss rT 4 d, ' | i = 100 3 3 7 a a 5 o = 53 g Cs) ma 2 s a So 10 7-901 2 3 5S 7-01 2 3 5 7-10 254 Collector Current,I, A lc Voce 250400 gm =] oOo oS > Collector Current,Ip A eS to la=0 0 1 2 3 4 5 Coliector to Emitter Voltage,Vog V Ic VBE 280400 1.4 oem 2 < ; 1.2 2 1.0 x 5 0.8 oO we $ 0.6 2 8 0.4 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage,Vgs V hre ~ | 5 Fspa00 3 Vor 2 nw DC Current Gain, hpg ming 8 ow 10 57001 23 579, 23 5749 2 Collector Current,I, A -!| Ny Ww a 8 Gain-Bandwidth Product,fp MHz 5 7 0.01 2>3 5 794 23 5 745 Collector CurrentIg A me 7997076 0015717 085 me28B544/2SD400 Output Capacitance,cy, pF Saturation Voltage,Vorsat) mV Collector te Emitter ge,Van(sat) - V Base to Emitter. Saturation Volta Collector Current,Ip A I = J os 100 Gob VcB 100 Cob Vee 2S5Bb44 280400 iar) Miz : fox | Miz Foe 5 5 Ts s 3 Pe, 8 3 i 5 Mm 2 SQ ws S eh o PN 3 L 10 = 10 ? 7 5 5. 5 7 1,0 2 10 5 7 1.0 2 3 7 10 3 Collector to Base Voltage, Voz V Collector to Base Voltage,Vcg V 7 Vce(sat) Vv - 1 > Ic/Ip=10 : E 3 2 ; 3 8 00 >, 100 7 2% 7 5 ea) o A> 3 oe 3 ~ 2 BB 2 of -10 a8 10 ON 7 5 5 0.01 i =1.0 0.01 57 0.1 1.0 Collector Current,Ig A Collector CurrentI A VBeE(sat) | - 10 BE(sat) Ic 0 Vee(sat) 2S8544 Ic/Ig==t0 > or) 8 mg 3 > 2 so 2 bo 4S BS 1.0 7 ss 7 33 5 SH 5 38 So 3 am 3 a J 2 5 7 9.01 3 -0.1 3.5 7-10 2 5790 23 5 704 571.0 2 Collector Current,I A Collector Current,ic A ASO Pe - Ta > 25B544/2S0400 Top NON Ig ING, oN 4, = 1.0 NY ch & MN | ; N : Ngo \ gs Ss, 3 2 & Ray | E 0.1 A Iw 8 5 8 r Ta = 25C 3 Single pulse s 5 2 For PNP, minus sign is omitted. 5 1.0 2 3 5 10 2 3 5 Collector to Emitter Voltage,Von V Ambient Temperature,Ta C Mm 7997076 0015718 Tl) 255CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS typical values. @ No marking is indicated. @ All of Sanyo lead formed small signal transistor case outlines are illustrated below. @ All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by 2.0 Case Outline 2003A/2003B (unit : mm) Case Outline 2019A/2019B (unit : mm) 2.0 0.44 2.0 0.46 tt pom 29 SE 29 3 Li) ~ 4 0.65 5. * 4.0 5.0 14.0 +] 40 JEDEC :TO-92 1: Source JEDEC 2702 1: Bmitter BIAS: SC-43 2: Gate EIAJ :SC-43 2: Collector SANYO :NP 3. Drain SANYO : NP 3: Base 74h . Case Outline 2004A (unit : mm) Case Outline 2033 (unit : mm) 0.44 2.2 + 3 >} 15.0 | Reds 2 rs 2p aq ., |-pe te m 492 wy FF =+4 ai j4 FE = [a | | 4 14.0 leo 1:Emitter * JEDEC :TO-92 1: Base 2: Collector BIAJ :SC-43 2: Emitter 3: Base SANYO : NP 3: Collector SANYO: SPA Case Outline 2005A (unit : mm) Case Outline 2034/2034A (unit : mm) 2.0 0.66 22 1.3 1.3 5.0 14.0 | 0.4 . 1: Source JEDEC :TO-92 1: Drain 2: Gate . EIAJ :SC-43 ; : Source 3: Drain . : : Gate SANYO : NP SANYO: SPA Case Outline 2006A (unit : mm) Case Outline 2040 (unit : mm) 22 3.0 0.5 pop wn Set | 2 it. b=2--f ( - {a we 4 a 42 1: Drain EIAJ :$C-61 1: Emitter 2: Source SANYO ; MP 2: Collector 3: Gate 3: Base SANYO: SPA Me 7997076 0015489 525 a 16Case Outline 2061 (unit : mm) 2.0 0.44 45 = _ bag = a 0.45 lho oa JEDEC :TO-92 : 1: Emitter EIAJ =: SC-43 2: Base SANYO : NP 3: Collector Case Outline 2064 (unit : mm) us 1 69 : ~ hd toe a qt} jos |S r2 3 hos. Ton Vou} 1: Emitter LOL Paty 2: CoHector | 3: Bose 2.94 254 SANYO: NMP Case Outline 2084A (unit:mm) __,, pre 10.5 LB I . 4 Lite tT }_afla.2 le 9.5. s i + | U tL to2 49 1: Emitter 2: Collector 3: Base 2.3 15) SANYO: FLP mm 7997076 0015490 240 17