Single P-Channel Trench MOSFET, -30V, -6.0A, 35m General Description Features The MDS3651 uses advanced MagnaChip's MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON) <35m @ VGS = -10V <55m @ VGS = -4.5V Applications Inverters General purpose applications 6(D) 7(D) 8(D) D 5(D) 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS 20 V -6.0 A -4.1 A -30 A o Ta=25 C Continuous Drain Current o Ta=100 C Pulsed Drain Current ID IDM o Ta=25 C Power Dissipation(1) o Ta=100 C Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range 2 PD W 0.8 EAS 60.5 mJ TJ, Tstg -55~150 o C Thermal Characteristics Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient(Steady-State)(1) RJA 62.5 Thermal Resistance, Junction-to-Case RJC 60 Unit o C/W January 2009. Version 2.0 1 MagnaChip Semiconductor Ltd. MDS3651- Single P-Channel Trench MOSFET, -30V, -5.3A, 35m MDS3651 Part Number Temp. Range Package Packing RoHS Status MDS3651URH -55~150oC SOIC-8 Tape & Reel Halogen Free Electrical Characteristics (Ta =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = -250A, VGS = 0V -30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.0 -1.9 -3.0 Drain Cut-Off Current IDSS VDS = -24V, VGS = 0V - Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 VGS = -10V, ID = -6.0A - 30.5 35.0 VGS = -4.5V, ID = -5.0A - 41.5 55.0 VDS = -5V, ID = -6.0A - 13 - - 18.4 - - 3.1 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS -1.0 V A m S Dynamic Characteristics Total Gate Charge Qg VDS = -15V, ID = -6.0A, VGS = -10V Gate-Source Charge Qgs Gate-Drain Charge Qgd - 3.6 - Input Capacitance Ciss - 874 - - 103 - Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 166 - Turn-On Delay Time td(on) - 9.8 - Turn-On Rise Time tr - 29.8 - Turn-Off Delay Time td(off) - 26.3 - - 8.6 - - -0.75 -1.0 V - 20 - ns - 12.3 - nC Turn-Off Fall Time VGS = -10V ,VDS = -15V, RL = 2.7, RGEN = 3 tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = -1A, VGS = 0V IF = -6.0A, di/dt = 100A/s Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25C, L = 1mH, IAS = -11A, VDD = -15V, VGS = -10V January 2009. Version 2.0 2 MagnaChip Semiconductor Ltd. MDS3651- Single P-Channel Trench MOSFET, -30V, -5.3A, 35m Ordering Information 30 60 -10.0V -4.5V -6.0V 25 -4.0V 50 -5.0V VGS=-4.5V 15 RDS(ON) [m ] -ID [A] 20 -3.5V 10 40 30 VGS=-10V 20 5 -3.0V 0 10 0 1 2 3 4 5 0 5 10 -VDS [V] 15 20 -ID [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 60 1. VGS = -10 V 2. ID = 6.5 A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance Notes : 1.4 VGS=-10V 1.2 VGS=-4.5V 1.0 50 TA = 125 40 TA = 25 30 20 0.8 10 0.6 -50 -25 0 25 50 75 100 125 3 150 4 5 6 7 8 9 10 -VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 10 * Notes ; 1. VDS=-5V 15 25 125 -IS [A] -ID [A] 10 1 25 5 0 0.0 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.1 0.4 5.0 0.8 1.0 -VSD [V] -VGS [V] Fig.5 Transfer Characteristics January 2009. Version 2.0 0.6 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS3651- Single P-Channel Trench MOSFET, -30V, -5.3A, 35m ELECTRICAL AND THERMAL CHARACTERISTICS Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1100 Note : ID = -6.5A 1000 Ciss -VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 900 6 4 800 700 600 500 Notes ; 400 300 2 1. VGS = 0 V 2. f = 1 MHz Coss 200 Crss 100 0 0 2 4 6 8 10 12 14 16 18 0 20 0 -QG, Total Gate Charge [nC] 2 30 7.0 100 us 6.5 1 6.0 10 ms -ID, Drain Current [A] -ID, Drain Current [A] 25 7.5 100 ms 1s 0 DC 10 20 8.0 1 ms 10 15 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 10 10 -VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics 10 5 -1 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 Single Pulse R ja=62.5 /W Ta=25 1.0 0.5 10 -2 10 -1 10 0 10 0.0 25 1 50 75 100 Ta, Ambient Temperature [ -VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area 125 150 ] Fig.10 Maximum Drain Current vs. Case Temperature 1 Z ja(t), Normalized Thermal Response 10 0 10 D=0.5 0.2 0.1 -1 10 0.05 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z Ja* R Ja(t) + Ta R JA=62.5 /W 0.02 0.01 -2 10 single pulse -3 10 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve January 2009. Version 2.0 4 MagnaChip Semiconductor Ltd. MDS3651- Single P-Channel Trench MOSFET, -30V, -5.3A, 35m 1200 10 8 Leads SOIC Dimensions are in millimeters unless otherwise specified January 2009. Version 2.0 5 MagnaChip Semiconductor Ltd. MDS3651- Single P-Channel Trench MOSFET, -30V, -5.3A, 35m Physical Dimensions U.S.A Sunnyvale Office 787 N. 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Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. January 2009. Version 2.0 6 MagnaChip Semiconductor Ltd. MDS3651- Single P-Channel Trench MOSFET, -30V, -5.3A, 35m Worldwide Sales Support Locations