January 2009. Version 2.0 MagnaChip Semiconductor Ltd.
1
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
Ta=25oC
ID
-6.0
A
Ta=100oC
-4.1
A
Pulsed Drain Current
IDM
-30
A
Power Dissipation(1)
Ta=25oC
PD
2
W
Ta=100oC
0.8
Single Pulse Avalanche Energy(2)
EAS
60.5
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
RθJA
62.5
oC/W
Thermal Resistance, Junction-to-Case
RθJC
60
MDS3651
Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ
General Description
The MDS3651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
VDS = -30V
ID = -6.0A @ VGS = -10V
RDS(ON)
<35m @ VGS = -10V
<55m @ VGS = -4.5V
Applications
Inverters
General purpose applications
1(S)
2(S)
3(S)
4(G)
8(D)
7(D)
6(D)
5(D)
D
G
S
G
S
1(S)
2(S)
3(S)
4(G)
8(D)
7(D)
6(D)
5(D)
D
G
S
G
S
January 2009. Version 2.0 MagnaChip Semiconductor Ltd.
2
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDS3651URH
-55~150oC
SOIC-8
Tape & Reel
Halogen Free
Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = -250μA, VGS = 0V
-30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250μA
-1.0
-1.9
-3.0
Drain Cut-Off Current
IDSS
VDS = -24V, VGS = 0V
-
-1.0
μA
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = -10V, ID = -6.0A
-
30.5
35.0
mΩ
VGS = -4.5V, ID = -5.0A
-
41.5
55.0
Forward Transconductance
gFS
VDS = -5V, ID = -6.0A
-
13
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = -15V, ID = -6.0A,
VGS = -10V
-
18.4
-
nC
Gate-Source Charge
Qgs
-
3.1
-
Gate-Drain Charge
Qgd
-
3.6
-
Input Capacitance
Ciss
VDS = -15V, VGS = 0V,
f = 1.0MHz
-
874
-
pF
Reverse Transfer Capacitance
Crss
-
103
-
Output Capacitance
Coss
-
166
-
Turn-On Delay Time
td(on)
VGS = -10V ,VDS = -15V,
RL = 2.7Ω, RGEN = 3Ω
-
9.8
-
ns
Turn-On Rise Time
tr
-
29.8
-
Turn-Off Delay Time
td(off)
-
26.3
-
Turn-Off Fall Time
tf
-
8.6
-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = -1A, VGS = 0V
-
-0.75
-1.0
V
Body Diode Reverse Recovery Time
trr
IF = -6.0A, di/dt = 100A/μs
-
20
-
ns
Body Diode Reverse Recovery Charge
Qrr
-
12.3
-
nC
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = -11A, VDD = -15V, VGS = -10V
January 2009. Version 2.0 MagnaChip Semiconductor Ltd.
3
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
ELECTRICAL AND THERMAL CHARACTERISTICS
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.4 0.6 0.8 1.0
0.1
1
10
25℃
125℃
-IS [A]
-VSD [V]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS=-10V
VGS=-4.5V
※ Notes :
1. VGS = -10 V
2. ID = 6.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0 5 10 15 20
10
20
30
40
50
60
VGS=-4.5V
VGS=-10V
RDS(ON) [mΩ ]
-ID [A]
3 4 5 6 7 8 9 10
10
20
30
40
50
60
TA = 25℃
TA = 125℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
-VGS, Gate to Source Volatge [V]
0 1 2 3 4 5
0
5
10
15
20
25
30 -10.0V
-6.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-ID [A]
-VDS [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
* Notes ;
1. VDS=-5V
125℃
25℃
-ID [A]
-VGS [V]
January 2009. Version 2.0 MagnaChip Semiconductor Ltd.
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MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response Curve
10-1 100101
10-2
10-1
100
101
102
100 us
1s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
Rθ ja
=62.5℃/W
Ta=25℃
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
-ID, Drain Current [A]
Ta, Ambient Temperature [℃]
10-5 10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
101
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ Ja
* Rθ Ja
(t) + Ta
RΘ JA
=62.5℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
Zθ ja
(t),
Normalized Thermal Response
t1, Rectangular Pulse Duration [sec]
0 5 10 15 20 25 30
0
100
200
300
400
500
600
700
800
900
1000
1100
1200 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
-VDS, Drain-Source Voltage [V]
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
※ Note : ID = -6.5A
-VGS, Gate-Source Voltage [V]
-QG, Total Gate Charge [nC]
January 2009. Version 2.0 MagnaChip Semiconductor Ltd.
5
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
January 2009. Version 2.0 MagnaChip Semiconductor Ltd.
6
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
