1
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
700VCoolMOSªP7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost
sensitiveapplicationsinconsumermarketssuchascharger,adapter,
lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction
MOSFET,combinedwithanexcellentprice/performanceratioandstateof
theartease-of-uselevel.Thetechnologymeetshighestefficiency
standardsandsupportshighpowerdensity,enablingcustomersgoing
towardsveryslimdesigns.
Features
•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
•Excellentthermalbehavior
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard
Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers,
Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj=25°C 700 V
RDS(on),max 0.36 Ω
Qg,typ 16.4 nC
ID,pulse 34 A
Eoss @ 400V 1.8 µJ
V(GS)th,typ 3 V
ESD class (HBM) 2
Type/OrderingCode Package Marking RelatedLinks
IPD70R360P7S PG-TO 252-3 70S360P7 see Appendix A
2
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
12.5
7.5 ATC = 20°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 34.0 A TC=25°C
Application (Flyback) relevant
avalanche current, single pulse3) IAS - - 4.5 A measured with standard leakage
inductance of transformer of 10µH
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage VGS -16
-30
-
-
16
30 Vstatic;
AC (f>1 Hz)
Power dissipation Ptot - - 59.5 W TC=25°C
Operating and storage temperature Tj,Tstg -40 - 150 °C -
Continuous diode forward current IS- - 8.5 A TC=25°C
Diode pulse current2) IS,pulse - - 34.0 A TC = 25°C
Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed4) dif/dt - - 50 A/µsVDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction RthJC - - 2.1 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W Device on PCB, minimal footprint
Thermal resistance, junction - ambient
for SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
thickness) copper area for drain
connection and cooling. PCB is
vertical without air stream cooling.
Soldering temperature, wave- & reflow
soldering allowed Tsold - - 260 °C reflow MSL3
1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.
4)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
4
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.15mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=700V,VGS=0V,Tj=25°C
VDS=700V,VGS=0V,Tj=150°C
Gate-source leakage current incl. Zener
diode IGSS - - 1 µAVGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.30
0.67
0.36
-ΩVGS=10V,ID=3.0A,Tj=25°C
VGS=10V,ID=3.0A,Tj=150°C
Gate resistance RG- 30 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 517 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 11 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 27 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 329 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 19 - ns VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Rise time tr- 8 - ns VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Turn-off delay time td(off) - 100 - ns VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Fall time tf- 18 - ns VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 2.3 - nC VDD=400V,ID=2.3A,VGS=0to10V
Gate to drain charge Qgd - 6.0 - nC VDD=400V,ID=2.3A,VGS=0to10V
Gate charge total Qg- 16.4 - nC VDD=400V,ID=2.3A,VGS=0to10V
Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=2.3A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
5
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3.8A,Tj=25°C
Reverse recovery time trr - 210 - ns VR=400V,IF=2.3A,diF/dt=50A/µs
Reverse recovery charge Qrr - 1.0 - µC VR=400V,IF=2.3A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 10 - A VR=400V,IF=2.3A,diF/dt=50A/µs
6
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
7
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
30
35
40
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
30
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
5 V 5.5 V 6 V
6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
98%
typ
RDS(on)=f(Tj);ID=3.0A;VGS=10V
8
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
5
10
15
20
25
30
35
40
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20
0
1
2
3
4
5
6
7
8
9
10
400 V
120 V
VGS=f(Qgate);ID=2.3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
102
25 °C
125 °C
IF=f(VSD);parameter:Tj
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-75 -50 -25 0 25 50 75 100 125 150 175
600
620
640
660
680
700
720
740
760
780
800
820
840
VBR(DSS)=f(Tj);ID=1mA
9
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
10-1
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500 600 700
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Eoss=f(VDS)
10
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
11
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
6PackageOutlines
2.5
REVISION
02
07-08-2019
ISSUE DATE
EUROPEAN PROJECTION
0
SCALE
5mm
0
2.5
DOCUMENT NO.
Z8B00180313
MILLIMETERS
4.57 (BSC)
2.29 (BSC)
L4
D
N
H
E1
e1
e
E
D1
L3 1.38
0.60
0.90
5.25
9.40
6.40
4.70
5.98
3
b3
A
DIM
b2
c
b
c2
A1
5.13
MIN
2.20
0.68
0.46
0.72
0.46
0.00
0.054
0.024
0.035
0.207
0.252
0.185
0.235
0.370
1.70
1.00
5.60
5.40
6.22
6.73
1.25
10.48
0.180 (BSC)
0.090 (BSC)
3
0.067
0.220
0.039
0.213
0.265
0.049
0.245
0.413
0.202
0.087
0.027
0.018
0.028
0.018
0.000
5.50
MAX
2.40
0.15
1.10
0.60
0.89
0.60
INCHES
MIN
0.217
MAX
0.006
0.094
0.035
0.024
0.043
0.024
L
Figure1OutlinePG-TO252-3,dimensionsinmm/inches
12
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSªP7Webpage:www.infineon.com
•IFXDesigntools:www.infineon.com
13
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
Rev.2.2,2019-08-09Final Data Sheet
RevisionHistory
IPD70R360P7S
Revision:2019-08-09,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-10-11 Release of final version
2.1 2018-02-12 Corrected front page text
2.2 2019-08-09 Updated package outline
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
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©2019InfineonTechnologiesAG
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LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe
productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.