TSFF5210 - Vishay [Semiconductors]

TSFF5210

www.vishay.com Vishay Semiconductors

Rev. 1.8, 24-Aug-11 1Document Number: 81090

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Speed Infrared Emitting Diode, 870 nm,

GaAlAs Double Hetero

DESCRIPTION

TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1 3/4

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Peak wavelength: p = 870 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = ± 10°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: fc = 24 MHz

• Good spectral matching with Si photodetectors

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Infrared video data transmission between camcorder and

TV set

• Free air data transmission systems with high modulation

frequencies or high data transmission rate requirements

• Smoke-automatic fire detectors

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8390

PRODUCT SUMMARY

COMPONENT Ie (mW/sr)  (deg) p (nm) tr (ns)

TSFF5210 180 ± 10 870 15

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TSFF5210 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR5V

Forward current IF100 mA

Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA

Surge forward current tp = 100 μs IFSM 1A

Power dissipation PV180 mW

TSFF5210

www.vishay.com Vishay Semiconductors

Rev. 1.8, 24-Aug-11 2Document Number: 81090

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

Junction temperature Tj100 °C

Operating temperature range Tamb - 40 to + 85 °C

Storage temperature range Tstg - 40 to + 100 °C

Soldering temperature t  5 s, 2 mm from case Tsd 260 °C

Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

100

120

140

160

180

200

0 102030405060708090100

21142

Tamb - Ambient Temperature (°C)

- Power Dissipation (mW)

RthJA

= 230 K/W

100

120

0 102030405060708090100

Tamb - Ambient Temperature (°C)

21143

IF - Forward Current (mA)

thJA

= 230 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V

IF = 1 A, tp = 100 μs VF2.3 3.0 V

Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K

Reverse current VR = 5 V IR10 μA

Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj125 pF

Radiant intensity IF = 100 mA, tp = 20 ms Ie120 180 360 mW/sr

IF = 1 A, tp = 100 μs Ie1800 mW/sr

Radiant power IF = 100 mA, tp = 20 ms e50 mW

Temperature coefficient of eIF = 100 mA TKe- 0.35 %/K

Angle of half intensity ± 10 deg

Peak wavelength IF = 100 mA p870 nm

Spectral bandwidth IF = 100 mA  40 nm

Temperature coefficient of pIF = 100 mA TKp0.25 nm/K

Rise time IF = 100 mA tr15 ns

Fall time IF = 100 mA tf15 ns

Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc24 MHz

Virtual source diameter d3.7mm

TSFF5210

www.vishay.com Vishay Semiconductors

Rev. 1.8, 24-Aug-11 3Document Number: 81090

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Radiant Intensity vs. Forward Current

Fig. 6 - Relative Radiant Power vs. Wavelength

Fig. 7 - Relative Radiant Intensity vs. Angular Displacement

Fig. 8 - Attenuation vs. Frequency

100

1000

0.01 0.1 1 10 100

- Pulse Duration (ms)

16031

tp/T = 0.01

0.05

0.2

0.5

0.1

0.02

Tamb < 50 °C

- Forward Current (mA)

18873

- Forward Current (mA)

1000

100

- Forward Voltage (V)

024

= 100 µs

/T = 0.001

0.1

100

1000

1 10 100 1000

16032 IF - Forward Current (mA)

Ie - Radiant Intensity (mW/sr)

780 880

λ - Wavelength (nm)

980

95 9886

0.25

0.5

0.75

1.0

1.25

- Relative Radiant Power

e rel

0.4 0.2 0

Ie rel - Relative Radiant Intensity

15989

0.6

0.9

0.8

0°

30°

10° 20°

40°

50°

60°

70°

80°

0.7

1.0

ϕ - Angular Displacement

- 5

- 4

- 3

- 2

- 1

f - Frequency (kHz)

14256

- Attenuation (dB)

FDC

= 70 mA

FAC

= 30 mA pp

TSFF5210

www.vishay.com Vishay Semiconductors

Rev. 1.8, 24-Aug-11 4Document Number: 81090

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

12.7 ± 0.3

35.7 ± 0.55

< 0.7

1.1 ± 0.25 Ø 5 ± 0.15

2.54 nom.

0.5 + 0.15

- 0.05

Ø 5.8 ± 0.15

8.7 ± 0.3

7.7 ± 0.15

1 min.

Area not plane

6.544-5258.09-4

Issue: 4; 19.05.09

15909

R2.49 (sphere)

(4.9)

specifications

according to DIN

technical drawings

0.5 + 0.15

- 0.05

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 02-Oct-12 1Document Number: 91000

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