BFG540W-X - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of August 1995

File under Discrete Semiconductors, SC14

1997 Dec 04

DISCRETE SEMICONDUCTORS

BFG540W

BFG540W/X; BFG540W/XR

NPN 9 GHz wideband transistor

1997 Dec 04 2

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

FEATURES

•High power gain

•Low noise figure

•High transition frequency

•Gold metallization ensures

excellent reliability.

APPLICATIONS

They are intended for applications in

the RF front end, in wideband

applications in the GHz range such as

analog and digital cellular telephones,

cordless telephones (CT2, CT3,

PCN, DECT, etc.), radar detectors,

pagers, satellite television tuners

(SATV), MATV/CATV amplifiers and

repeater amplifiers in fibre-optic

systems.

DESCRIPTION

NPN silicon planar epitaxial

transistors in plastic, 4-pin

dual-emitter SOT343N and SOT343R

packages.

MARKING

PINNING

TYPE NUMBER CODE

BFG540W N9

BFG540W/X N7

BFG540W/XR N8

PIN DESCRIPTION

BFG540W (see Fig.1)

1 collector

2 base

3 emitter

4 emitter

BFG540W/X (see Fig.1)

1 collector

2 emitter

3 base

4 emitter

BFG540W/XR (see Fig.2)

1 collector

2 emitter

3 base

4 emitter

Fig.1 SOT343N.

page

Top view

MSB014

Fig.2 SOT343R.

page

Top view

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCES collector-emitter voltage RBE =0 −−15 V

ICcollector current (DC) −−120 mA

Ptot total power dissipation up to Ts=85°C−−500 mW

hFE DC current gain IC= 40 mA; VCE = 8 V 60 120 250

Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz −0.5 −pF

fTtransition frequency IC= 40 mA; VCE = 8 V; f = 1 GHz; Tamb =25°C−9−GHz

GUM maximum unilateral

power gain IC= 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25°C−16 −dB

IC= 40 mA; VCE = 8 V; f = 2 GHz; Tamb =25°C10−dB

|s21|2insertion power gain IC= 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25°C14 15 −dB

F noise ﬁgure Γs=Γ

opt; IC= 10 mA; VCE =8V; f=2GHz −2.1 −dB

1997 Dec 04 3

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCES collector-emitter voltage RBE =0 −15 V

VEBO emitter-base voltage open collector −2.5 V

ICcollector current (DC) −120 mA

Ptot total power dissipation up to Ts=85°C; see Fig.3; note 1 −500 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −175 °C

Fig.3 Power derating curve.

VCE ≤10 V.

handbook, halfpage

0 50 100 200

400

MBG248

150 T ( C)

Ptot

(mW)

600

200

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point up to Ts=85°C; note 1 180 K/W

1997 Dec 04 4

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

CHARACTERISTICS

Tj=25°C (unless otherwise speciﬁed).

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

2. IC= 40 mA; VCE =8V; R

L=50Ω; Tamb =25°C;

a) fp= 900 MHz; fq= 902 MHz; measured at f(2p −q) = 898 MHz and f(2q −p) = 904 MHz.

3. dim =−60 dB (DIN45004B); Vp=V

; Vq=V

o−6 dB; Vr=V

o−6 dB; RL=75Ω; VCE = 8 V; IC= 40 mA;

a) fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at f(p+q−r) = 793.25 MHz.

4. IC= 40 mA; VCE = 8 V; Vo= 275 mV; RL=75Ω; Tamb =25°C;

a) fp= 250 MHz; fq= 560 MHz; measured at f(p+q)= 810 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown

voltage open emitter; IC=10µA; I

E=0 20 −−V

(BR)CES collector-emitter breakdown

voltage RBE = 0; IC=40µA15−−V

(BR)EBO emitter-base breakdown

voltage open collector; IE= 100 µA; IC= 0 2.5 −−V

CBO collector cut-off current open emitter; VCB =8V; I

E=0 −−50 nA

hFE DC current gain IC= 40 mA; VCE = 8 V 60 120 250

fTtransition frequency IC= 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25°C−9−GHz

Cccollector capacitance IE=i

e= 0; VCB =8V; f=1MHz −0.9 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −2−pF

Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz −0.5 −pF

GUM maximum unilateral power

gain; note 1 IC= 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25°C−16 −dB

IC= 40 mA; VCE = 8 V; f = 2 GHz;

Tamb =25°C−10 −dB

|s21|2insertion power gain IC= 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25°C14 15 −dB

F noise ﬁgure Γs=Γ

opt; IC= 10 mA; VCE =8V;

f = 900 MHz −1.3 1.8 dB

Γs=Γ

opt; IC= 40 mA; VCE =8V;

f = 900 MHz −1.9 2.4 dB

Γs=Γ

opt; IC= 10 mA; VCE =8V;

f = 2 GHz −2.1 −dB

PL1 output power at 1 dB gain

compression IC= 40 mA; VCE = 8 V; f = 900 MHz;

RL=50Ω; Tamb =25°C−21 −dBm

ITO third order intercept point note 2 −34 −dBm

Vooutput voltage note 3 −500 −mV

d2second order intermodulation

distortion note 4 −−50 −dB

GUM 10 s21 2

11 2

–()1s

22 2

–()

------------------------------------------------------------ dB.log=

1997 Dec 04 5

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

VCE =8V.

Fig.4 DC current gain as a function of

collector current; typical values.

handbook, halfpage

250

100

150

200

MRA749

−2

−1

11010

IC (mA)

IC= 0; f = 1 MHz.

Fig.5 Feedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

(pF)

VCB (V)

812

0.8

0.6

0.4

0.2

MRA750

Fig.6 Transition frequency as a function of

collector current; typical values.

f = 1 GHz; Tamb =25°C.

handbook, halfpage

MLC044

0110 1102

10 I (mA)

(GHz)

TV = 8 V

V = 4 V

1997 Dec 04 6

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

f = 900 MHz; VCE =8V.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

050

MLC045

10 20 30 40

gain

(dB)

I (mA)

MSG

GUM

Gmax

f = 2 GHz; VCE =8V.

Fig.8 Gain as a function of collector current;

typical values.

handbook, halfpage

050

MLC046

10 20 30 40

gain

(dB)

I (mA)

GUM

Gmax

IC= 10 mA; VCE =8V.

Fig.9 Gain as a function of frequency;

typical values.

handbook, halfpage

010

MLC047

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

Fig.10 Gain as a function of frequency;

typical values.

IC= 40 mA; VCE =8V.

handbook, halfpage

010

MLC048

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

1997 Dec 04 7

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

Fig.11 Intermodulation distortion as a function

of collector current; typical values.

Vo= 500 mV; f(p+q−r) = 793.25 MHz; VCE = 8 V; Tamb =25°C;

RL=75Ω.

handbook, halfpage

10 60

−20

−70

−60

−50

−40

−30

20 30 40

dim

(dB)

IC (mA)

MEA973

Fig.12 Second order intermodulation distortion as a

function of collector current; typical values.

Vo= 275 mV; f(p+q)= 810 MHz; VCE = 8 V; Tamb =25°C; RL=75Ω.

handbook, halfpage

10 60

−20

−70

−60

−50

−40

−30

20 30 40

(dB)

IC (mA)

MEA972

Fig.13 Minimum noise figure as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

MLC049

(dB)

I (mA)

f = 2000 MHz

1000 MHz

900 MHz

500 MHz

110 102

Fig.14 Associated available gain as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

IC (mA)

MRA760

1102

2000 MHz

1000 MHz

2000 MHz

1000 MHz

f = 900 MHz

Gass

Fmin

900 MHz

500 MHz

1997 Dec 04 8

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

Fig.15 Minimum noise figure as a function

of frequency; typical values.

VCE =8V.

handbook, halfpage

MLC050

(dB)

f (MHz) 104

103

102

I = 40 mA

10 mA

Fig.16 Associated available gain as a function

of frequency; typical values.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

f (MHz)

MRA761

Gass

10 mA Fmin

40 mA

IC = 10 mA

1997 Dec 04 9

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

handbook, full pagewidth

MLC051

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

135o

0.5

0.2

0.5

F = 3 dB

F = 2 dB

F = 1.5 dB

opt

F = 1.3 dB

min

stability

circle

unstable

region

180

0.2

50.2 0.5 2

90o

Fig.17 Common emitter noise figure circles; typical values.

f = 900 MHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.

handbook, full pagewidth

MLC052

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

F = 4 dB

opt

0.2

180 0

0.2

0.2 0.5 1

G = 9 dB G = 8 dB

G = 9.8 dB

max

F = 2.1 dB

min

F = 1.5 dB

F = 3 dB

Fig.18 Common emitter noise figure circles; typical values.

f = 2 GHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.

1997 Dec 04 10

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

handbook, full pagewidth

MLC053

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

0.2

0.5

0.2

180 0.2 1

00.5

40 MHz

3 GHz

VCE = 8 V; IC= 40 mA; Zo=50Ω.

Fig.19 Common emitter input reflection coefficient (s11); typical values.

VCE = 8 V; IC= 40 mA.

Fig.20 Common emitter forward transmission coefficient (s21); typical values.

handbook, full pagewidth

MLC054

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz

3 GHz

1997 Dec 04 11

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

VCE = 8 V; IC= 40 mA.

Fig.21 Common emitter reverse transmission coefficient (s12); typical values.

handbook, full pagewidth

MLC055

90o

135o

180o

90o

0.25 0.20 0.15 0.10 0.05

45o

135o45o

40 MHz

3 GHz

VCE = 8 V; IC=40mA;Z

o=50Ω.

Fig.22 Common emitter output reflection coefficient (s22); typical values.

handbook, full pagewidth

MLC056

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

1997 Dec 04 12

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

SPICE parameters for the BFG540W crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.045 fA

2 BF 184.3 −

3 NF 0.981 −

4 VAF 41.69 V

5 IKF 10.00 A

6 ISE 232.4 fA

7 NE 2.028 −

8 BR 43.99 −

9 NR 0.992 −

10 VAR 2.097 V

11 IKR 166.2 mA

12 ISC 129.8 aA

13 NC 1.064 −

14 RB 5.000 Ω

15 IRB 1.000 µA

16 RBM 5.000 Ω

17 RE 353.5 mΩ

18 RC 1.340 Ω

19 (1) XTB 0.000 −

20 (1) EG 1.110 eV

21 (1) XTI 3.000 −

22 CJE 1.978 pF

23 VJE 600.0 mV

24 MJE 0.332 −

25 TF 7.457 ps

26 XTF 11.40 −

27 VTF 3.158 V

28 ITF 156.9 mA

29 PTF 0.000 deg

30 CJC 793.7 fF

31 VJC 185.5 mV

32 MJC 0.084 −

33 XCJC 0.150 −

34 TR 1.598 ns

35 (1) CJS 0.000 F

Note

1. These parameters have not been extracted, the

default values are shown.

List of components (see Fig.23).

36 (1) VJS 750.0 mV

37 (1) MJS 0.000 −

38 FC 0.814 −

DESIGNATION VALUE UNIT

Cbe 70 fF

Ccb 50 fF

Cce 115 fF

L1 0.34 nH

L2 0.10 nH

L3 0.25 nH

LB0.40 nH

LE0.40 nH

SEQUENCE No. PARAMETER VALUE UNIT

QLB= 50; QLE= 50; QLB,E(f)=QL

B,E√(f/fc)

fc= scaling frequency = 1 GHz.

Fig.23 Package equivalent circuit

SOT343N; SOT343R.

handbook, halfpage

MBC964

CB' C'

L1 L2

Ccb

Cbe ce

1997 Dec 04 13

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

PACKAGE OUTLINES

UNIT A1

max bpcD E

pQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

SOT343N

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT343N

wMB

97-05-21

1997 Dec 04 14

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT343R

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; reverse pinning; 4 leads SOT343R

wMB

97-05-21

UNIT A1

max bpcD E

pQwv

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

1997 Dec 04 15

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 3 301 6312, Fax. +34 3 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 632 2000, Fax. +46 8 632 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2686, Fax. +41 1 481 7730

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p,

P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: see Singapore

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Middle East: see Italy

Printed in The Netherlands 127127/00/03/pp16 Date of release: 1997 Dec 04 Document order number: 9397 750 03146