SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996 ✪
FEATURES
* Compact geometry
* Fast switching speeds
* No secon dar y br eak down and Excel lent temper atur e stabi li ty
* High input impedanc e and low current driv e
* Ease of parr all eling
APPLICATIONS
* DC-DC converters
* Solenoid / relay drivers fo r autom ot ive applicat ions
* Stepper mot or dr iver s and Pr in t head driver s
PARTMARKING DETAIL - ZVN4206
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb=25°C ID1A
Pulsed Drain Current IDM 8A
Gate-Sour ce Voltage VGS ± 20 V
Power Dissi pation at Tamb=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ZVN4206G ZVN4206G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Bre akdown Voltage BVDSS 60 V ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th) 1.3 3 V ID=1mA, V DS= VGS
Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain Current IDSS 10
100 µA
µAVDS=60V, VGS=0V
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current (1) ID(on) 3AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 1
1.5 Ω
ΩVGS=10V, ID=1.5A
VGS=5V, ID=0.5A
Forward Transconductance (1)(2) gfs 300 mS VDS=25V,ID=1.5A
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2) Coss 60 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 8ns
VDD ≈25V, ID=1.5A, VGEN
=10V
Rise Time (2)(3) tr12 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times me asured with 50Ω source impedance and <5ns rise time on a pulse generator
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