Document Number: 93707 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 12-Aug-08 1
Phase Control SCR, 20 A
30TPS... High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 30TPS... High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
PRODUCT SUMMARY
VT at 20 A < 1.3 V
ITSM 300 A
VRRM 800/1200 V
(G) 3
2
(A)
1 (K)
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 20
A
IRMS 30
VRRM/VDRM 800/1200 V
ITSM 300 A
VT20 A, TJ = 25 °C 1.3 V
dV/dt 500 V/µs
dI/dt 150 A/µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
30TPS08 800 900
10
30TPS12 1200 1300
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93707
2Revision: 12-Aug-08
30TPS... High Voltage Series
Vishay High Power Products Phase Control SCR, 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 95 °C, 180° conduction half sine wave 20
A
Maximum RMS on-state current IRMS 30
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 310 A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 4420 A2s
Maximum on-state voltage drop VTM 20 A, TJ = 25 °C 1.3 V
On-state slope resistance rtTJ = 125 °C 12 mΩ
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Maximum holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A 100
Maximum latching current ILAnode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
µsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
Document Number: 93707 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 12-Aug-08 3
30TPS... High Voltage Series
Phase Control SCR, 20 A Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
0.8
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) 30TPS08
30TPS12
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4Revision: 12-Aug-08
30TPS... High Voltage Series
Vishay High Power Products Phase Control SCR, 20 A
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
90
100
110
120
130
0 5 10 15 20 25
30° 60°
90° 120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
3 0 TPS. . Se r i e s
R (DC) = 0.8 °C/ W
thJC
80
90
100
110
120
130
0 5 10 15 20 25 30 35
DC
30° 60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
3 0 TPS. . Se r i e s
R (DC) = 0.8 °C/ W
thJC
0
10
20
30
40
50
60
0 5 10 15 20 25 30
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
30TPS.. Series
T = 125°C
J
0
20
40
60
80
0 1020304050
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
3 0 TPS. . Se r i e s
T = 1 2 5 ° C
J
120
140
160
180
200
220
240
260
280
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
3 0 TP S. . Se ri e s
120
140
160
180
200
220
240
260
280
300
0.01 0.1 1
Peak Ha lf Sine Wave On-st a te Current (A)
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Maintained.
Initial T = 125°C
No Volta g e Re a p p lie d
Ra t e d V Re a p p l i e d
RRM
J
30TPS.. Se rie s
Maximum Non Repetitive Surge Current
Document Number: 93707 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 12-Aug-08 5
30TPS... High Voltage Series
Phase Control SCR, 20 A Vishay High Power Products
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Gate Characteristics
1
10
100
1000
01234567
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
30TPS.. Serie s
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
St e a d y St a t e V a l u e
(DC Operation)
Si n g l e P u l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
30TPS.. Series
Transient Thermal Impedance Z C/W)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = 2 5 ° C
TJ = 1 25 ° C
Frequency Limited by PG(AV)
TJ = - 1 0 ° C
IGD
VGD
30TPS.. Serie s
tr = 1 µs, t p >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
b)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
a)Recommended load line for
Re c t a n g u l a r g a t e p ul se
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93707
6Revision: 12-Aug-08
30TPS... High Voltage Series
Vishay High Power Products Phase Control SCR, 20 A
ORDERING INFORMATION TABLE
1- Current rating (30 = 30 A)
2- Circuit configuration:
3- Package:
4
T = Thyristor
- Type of silicon:
5- Voltage code x 100 = VRRM
P = TO-247
S = Standard recovery rectifier
6-None = Standard production
PbF = Lead (Pb)-free
Device code
51324
6
30 T P S 12 -
08 = 800 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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