2002-2012 Microchip Technology Inc. DS21374D-page 1
TC1263
Features
• Very Low Dropout Voltage
• 500 mA Output Current
• High-Output V oltage Accuracy
• Standard or Custom Output Voltages
• Overcurrent and Overtemperature Protection
• SHDN Input for Active Power Management
• ERROR Output Can Be Used as a Low Battery
Detector (SOIC only)
Applications
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulators for SMPS
• Pagers
Typical Applicat ion
Description
The TC1263 is a fixed-output, high-accuracy (typic ally
±0.5%) CMOS low dropout regulator. Designed
specifically for battery-operated systems, the TC1263’ s
CMOS construction eliminates wasted ground current,
signific antly extending battery life. Total supply current
is typic all y 80 µA at full lo ad (20 to 60 tim es lower tha n
in bipolar regulators).
TC1263 ke y features incl ude ul tra low noise operation,
very low dropout voltage (typically 350 mV at full load)
and fast response to step changes in load.
The TC1263 incorporates both overtemperature and
overcurrent protection. The TC1263 is stable with an
output capacitor of only 1 µF and has a maximum
output current of 500 mA. It is available in 8-Pin SOIC,
5-Pin TO-220 and 5-Pin DDPAK packages.
Package Type
TC1263
VIN VOUT
C1
1µF
GND
VOUT
VIN
SHDN SHDN
+
VIN
GND
VOUT
Front View
123
Tab is GND
TC1263
1
2
3
4
8
7
6
5
TC1263 NC
SHDN
8-Pin SOIC
GND
NC
BYPASS
VOUT VIN
VIN
VOUT
TC1263
5-Pin TO-220
Tab is GND
5-Pin DDPAK
123
GND
SHDN
45
BYP
BYP
4
SHDN
5
ERROR
500 mA, Fixed-Output, CMOS LDO with Shutdown
TC1263
DS21374D-page 2 2002-2012 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maxim um Ratings †
Input Voltage .........................................................6.5V
Output Voltage......... ...... . (GND – 0.3V) to (VIN + 0.3V)
Power Dissi pation................Internally Limited (Note 7)
V oltage (max.) on Any Pin: (GND
– 0.3V) to (V
IN
+ 0.3V)
Operati ng Tempe ratu re Ra nge....-40°C < TJ < +125°C
Storage Temperature..........................-65°C to +150°C
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.0V, (Note 1), IL = 100 µA, CL = 3.3 µF,
SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage VIN 2.7 —6.0 VNote 2
Maximum Outpu t Current IOUTMAX 500 ——mA
Output Voltage VOUT VR – 2.5% VR ± 0.5% VR + 2.5% VNote 1
VOUT Temperature Coefficient VOUT/T — 40 — ppm/°C Note 3
Line Regulation VOUT/VIN —0.050.35 %(V
R + 1V) VIN6V
Load Regulation (Note 4) VOUT/VOUT –0.01 0.002 +0.01 %/mA IL = 0. 1 mA to IOUTMAX
Dropout Voltage (Note 5) VIN-VOUT —2030 mV IL = 100 µA
—60130 IL = 100 mA
— 200 390 IL = 300 mA
— 350 650 IL = 500 mA
Supply Current IDD —80130 µA SHDN = VIH, IL = 0
Shutdown Supply Current ISHDN —0.051µA SHDN = 0V
Power Supply Rejection Ratio PSRR — 64 — db F 1kHz
Output Short Circuit Current IOUTSC — 1200 1400 mA VOUT = 0V
Thermal Regulation VOUT/PD—0.04—V/WNote 6
Output Noise eN — 260 — nV/Hz IL = IOUTMAX, F = 10 kHZ
Note 1: VR is the regulator output voltage setting.
2: The minimum VIN has to justify the conditions: VIN VR + VDROPOUT and VIN 2.7V for IL = 0.1 mA to IOUTMAX.
3:
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects a re covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value measured at a 1.0V differ ential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a funct ion of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, T J, JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Consideration s” for
more details.
TCVOUT VOUTMAX VOUTMIN
–106
–
VOUT T
-------------------------------------------------------------------------
=
2002-2012 Microchip Technology Inc. DS21374D-page 3
TC1263
SHDN Input
SHDN Input High Threshold VIH 45 ——%V
IN
SHDN Input Low Threshold VIL ——15 %VIN
ERROR Output (SOIC Only)
Minimum Operating Voltage VMIN 1.0 — — V
Output Logic Low Voltage VOL ——400 mV 1 mA Flows to ERROR
ERROR Threshold Voltage VTH — 0.95 x VR—V
ERROR Positive Hysteresis VHYS —50—mV
DC CHARACTERISTICS (CONTINUE D)
Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.0V, (Note 1), IL = 100 µA, CL = 3.3 µF,
SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: VR is the regulator output voltage setting.
2: The minimum VIN has to justify the conditions: VIN VR + VDROPOUT and VIN 2.7V for IL = 0.1 mA to IOUTMAX.
3:
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects a re covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value measured at a 1.0V differ ential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, T J, JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Consideration s” for
more details.
TCVOUT VOUTMAX VOUTMIN
–106
–
VOUT T
-------------------------------------------------------------------------
=
TEMP ERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.0V, IL = 100 µA, CL = 3.3 µF,
SHDN > VIH, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 — +125 °C Note 1
Operating Tem perature Range TJ-40 — +125 °C
Storage Temperature Range TA-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-DDPA K JA —57—°C/W
Thermal Resistance, 5L-TO-220 JA —71—°C/W
Thermal Resistance, 8L-SOIC JA — 163 — °C/W
Note 1: Operation in this range must not cause TJ to exceed Maximum Junction Temperature (+125°C).
TC1263
DS21374D-page 4 2002-2012 Microchip Technology Inc.
2.0 TY PICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VIN = VR + 1.0V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-1: Line Regulation vs.
Temperature.
FIGURE 2-2: Output Noise vs. Frequency.
FIGURE 2-3: Load Regulation vs.
Temperature.
FIGURE 2-4: IDD vs. Temperature.
FIGURE 2-5: 2.5V Dropout Voltage vs.
ILOAD.
FIGURE 2-6: 5.0V Dropout Voltage vs.
ILOAD.
Note: The g r ap hs and t ables provid ed fol low i ng thi s n ote are a statistical s umm ar y based on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
.
020
0
.
018
0
.
016
0
.
012
0
.
010
0
.
008
0
.
006
0
.
004
0
.
002
0
.
000
0
.
014
TE
M
PE
RA
T
UR
E
(
°
C
)
LI
N
E
R
EG
U
L
A
TIO
N
(
%
)
-
40
°
C0
°
C25
°
C70
°
C85
°
C 125
°
C
F
R
EQ
U
E
NC
Y
(
k
H
z
)
N
OISE
(
μ
V/
√
H
z
)
10
.
0
1
.
0
0
.
01 0
.
01 1 10 100 1000
0
.
1
0
.
0
R
LO
AD
=
50
Ω
C
O
U
T
=
1
μ
F
-40°C0°C25°C70°C85°C 125°
C
0.0100
0.0090
0.0080
0.0070
0.0060
0.0050
0.0040
0.0030
0.0020
0.0010
0.0100
TEMPERATURE (°C)
LOAD REGULATION (%/mA)
1mA to 500mA
1mA to 500mA
5V
2.5V
TE
M
PE
RA
T
UR
E
(
°
C
)
I
DD
(
μ
A
)
150
135
120
105
90
75
60
45
30
15
0
5
V
-
40
°
C0
°
C25
°
C70
°
C85
°
C 125
°
C
2
.
5
V
0 100 200 300 400 500
I
LO
AD
(
m
A
)
DR
OPO
U
T VOLT
A
GE
(
V
)
0
.
50
0
.
40
0
.
30
0
.
20
0
.
10
0
.
00
-
40
°
C
0
°
C
70
°
C
85
°
C
25
°
C
125
°
C
0100 200 300 400 500
I
LO
AD
(
m
A
)
0
.
50
0
.
40
0
.
30
0
.
20
0
.
10
0
.
00
DR
OPO
U
T VOLT
A
GE
(
V
)
25
°
C
-
40
°
C
0
°
C
70
°
C
85
°
C
125
°
C
2002-2012 Microchip Technology Inc. DS21374D-page 5
TC1263
Note: Unless otherwise indicated, VIN = VR + 1.0V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-7: 2.5V VOUT vs. Temperature. FIGURE 2-8: 5.0V VOUT vs. Temperature.
2
.
70
2
.
50
2
.
30
2
.
10
1
.
90
1
.
70
1
.
50
-
40
°
C0
°
C25
°
C70
°
C85
°
C 125
°
C
TE
M
PE
RA
T
UR
E
(
°
C
)
IL =
0
.
1
m
A
IL =
300
m
A
IL =
500
m
A
V
O
U
T
(
V
)
5
.
20
5
.
10
5
.
00
4
.
90
4
.
80
4
.
70
4
.
60
4
.
50
4
.
40
4
.
30
4
.
20
4
.
10
4
.
00
-
40
°
C0
°
C25
°
C70
°
C85
°
C125
°
C
TE
M
PE
RA
T
UR
E
(
°
C
)
VO
U
T
(
V
)
I
L
=
0
.
1
m
A
I
L
=
300
m
A
I
L
=
500
m
A
TC1263
DS21374D-page 6 2002-2012 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Regulated Output Voltage (VOUT)
VOUT is a regulated voltage output.
3.2 Ground (GND)
Ground terminal.
3.3 Reference Bypass (BYPASS)
Reference bypass input. Connect a 470 pF to the
BYPASS input to further reduce output noise.
3.4 Out-of-Regulation Flag (ERROR)
Out-of-Regulation Flag (open-drain output). ERROR
goes low when VOUT is out-of-tolerance by
approximately – 5%.
3.5 Shutdown Control (SHDN)
Shutdown control input. The regulator is fully enabled
when a logic-high is applied to SHDN. The regulator
enters shutdown when a logic-low is applied to this
input. D uring s hutdown , output v oltage falls t o zero an d
supply current is reduced to 0.05 µA (typical).
3.6 Unregulat ed Supply (V IN)
VIN is an unregulated supply input.
Pin No.
(8-Pin SOIC)
Pin No.
(5-Pin DDPAK)
(5-Pin TO-220) Symbol Description
15V
OUT Regu lat ed vol t age outp ut
2 3 GND Ground terminal
3 — NC No connect
4 1 BYPASS Reference bypass input
5 — ERROR Out-of-Regulation Flag (open-drain output).
6 2 SHDN Shutdown control input
7 — NC No connect
84V
IN Unr egulated suppl y input
2002-2012 Microchip Technology Inc. DS21374D-page 7
TC1263
4.0 DETAILED DESCRIPTION
The TC1263 is a precision, fixed-output LDO. Unlike
bipolar regulators, the TC1263’s supply current does
not increase with load current. In addition, VOUT
remains stable and within regulation over the entire
0mA to I
LOADMAX load current range (an important
consid eration in RTC and CM OS R AM batt ery back-u p
applications).
Figure 4-1 shows a typical application circuit.
FIGURE 4-1: Typi c al App lica tio n Circui t.
4.1 Output Capacitor
A 1 µF (min.) capacitor from VOUT to ground is
required. The output capacitor should have an Effective
Series Eesistance (ESR) greater than 0.1 and less
than 5. A 1 µF capacitor should be connected from
VIN to GND if there is either more than 10 inches of wire
between the regulator and the AC filter capacitor or a
battery is used as the power source. Aluminum
electrolytic or tantalum capacitor types can be used.
Since many aluminum electrolytic capacitors freeze at
approximately -30°C, solid tantalums are
recommended for applications operating below -25°C.
When operating from sources other than batteries,
supply-noise rejection and transient response can be
improved by increasing the value of the input and
output capacitors, and by employing passive filtering
techniques.
4.2 ERROR Output
ERROR is driven low whenever VOUT falls out of
regulati on by more th an – 5% (typ.). This condition may
be caused by low input voltage, output current limiting
or thermal limiting. The ERROR th reshold i s 5% below
rated VOUT, regardless of the programmed output
voltage value (e.g., ERROR = VOL at 4.75V (typ.) for a
5.0V regulator and 2.85V (typ.) for a 3.0V regulator).
ERROR output operation is shown in Figure 4-2.
Note that ERROR is active when VOUT is at or below
VTH, and inactive when VOUT is above VTH + VHYS.
As shown in Figure 4-1, ERROR can be used as a
battery-low flag or as a processor RESET si gnal ( with
the addition of timing capacitor C3). R1 x C3 should be
chosen to maint ain ERR OR below VIH of the processor
RESET input for at least 200 ms to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
FIGURE 4-2: ERROR Output Operation.
C1
R1
1M
V+
TC1263
VIN
Battery
VOUT
ERRORSHDN
GND
VOUT
1µF
++
Shutdown Control
(to CMOS Logic or Tie
to VIN, if unused)
C2
1µF
+
C3 Required Only
if ERROR is used as a
Processor RESET Signal
(See Text) C3
0.2 µF
+BATTLOW
or RESET
VOUT
VTH
VOH
Hys teresis (VHYS)
VOL
ERROR
TC1263
DS21374D-page 8 2002-2012 Microchip Technology Inc.
5.0 THERMAL CONSIDER ATION S
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulato r off when the die tem peratu re exceed s 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2 Power Dissipation
The amount of power the regulator dissipates is
primaril y a funct ion of inp ut and outp ut volt age and o ut-
put curre nt. Th e fo llowing equation is use d to calculate
worst-case actual power dissipation:
EQUATION 5-1:
The maximum allowable power dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (JA).
EQUATION 5-2:
Table 5-1 and Table 5-2 show various values of JA
for
the TC1263 package ty pes.
TABLE 5-1: THERMAL RESISTANCE
GUIDELINES FOR TC1263 IN
8-PIN SOIC PACKAGE
TABLE 5-2: THERMAL RESISTANCE
GUIDELINES FOR TC1263 IN
5-PIN DDPAK/TO-220
PACKAGE
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits. For ex ample:
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
Actual po wer dissipation:
Maximum allowable power dissipation:
In this example, the TC1263 diss ipates a maximum of
260 mW below the allowable limit of 500 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits. For example, the maximum allowable
VIN is found by substituting the maximum allowable
power dissipation of 500 mW into Equation 5-1, from
which VINMAX = 4.6V.
Copper
Area
(Topside)*
Copper
Area
(Backside)
Board
Area
Thermal
Resistance
JA)
2500 sq mm 2500 sq mm 2500 sq mm 60°C/W
1000 sq mm 2500 sq mm 2500 sq mm 60°C/W
225 sq mm 2500 sq mm 2500 sq mm 68°C/W
100 sq mm 2500 sq mm 2500 sq mm 74°C/W
* Pin 2 is ground. Device is mounted on top-side.
Where:
VINMAX
VOUTMIN
ILOADMAX
PD = Worst-case ac tual power dissipation
= Minimum regulator output voltage
= Maximum output (load) current
= Maximum voltage on VIN
PDVINMAX VOUTMIN
–ILOADMAX
=
Where:
VINMAX
VOUTMIN
ILOADMAX
PD = Worst-ca se actual power dissipation
= Minimum regulator output voltage
= Maximum output (load) current
= Maximum voltage on VIN
PDMAX TJMAX TAMAX
–
JA
---------------------------------------
=
Copper
Area
(Topside)*
Copper
Area
(Backside)
Board
Area
Thermal
Resistance
JA)
2500 sq mm 2500 sq mm 2500 sq mm 25°C/W
1000 sq mm 2500 sq mm 2500 sq mm 27°C/W
125 sq mm 2500 sq mm 2500 sq mm 35°C/W
* Tab of devi ce attached to top-side copper
Given: VINMAX =3.3V ± 10%
VOUTMIN =2.7V ± 0.5%
ILOADMAX =275mA
TJMAX =125°C
TAMAX =95°C
JA = 60° C/W (SOIC)
PDMAX TJMAX TAMAX
–
JA
---------------------------------------
=
PDMAX 125 95–
60
-------------------------
=
PDMAX 500 mW=
2002-2012 Microchip Technology Inc. DS21374D-page 9
TC1263
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
XXXXXXXXX
XXXXXXXXX
YYWWNNN
5-Lead DDPAK
TC1263
3.3VET
Example:
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
Example:
TC1263-
3.3VATX
0430256
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
1263-3.3
VOA0430
256
0430256
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu meric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the fu ll Micr ochip part nu mber ca nnot be m arked o n one lin e, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
TC1263
DS21374D-page 10 2002-2012 Microchip Technology Inc.
5-Lead Plastic (ET) (DDPAK)
BOTTOM VIEW
TOP VIEW
E
D
b
E1
D2
A
A1
c2
c L
D1
e
θ1
θ
(5X)
L3
1
§ Significant Characteristic
Drawing No. C04-012
Notes:
Mold Draft Angle
Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
θ1 7°
Pitch
Number of Pins
Overall Width
Standoff §
Molded Package Length
Exposed Pad Width
Overall Height
MAX
Units
Dimension Limits
A1
E1
D
E
e
A
.398
.000
.256 REF
INCHES*
.067 BSC
MIN
5
NOM MAX
.010 0.00
10.11
6.50 REF
MILLIMETERS
.183
MIN
5
1.70 BSC
NOM
0.25
4.65
JEDEC equivalent: TO-252
4.50.170
.005 0.13
Foot Length L .068 .089 .110 1.73 2.26 2.79
Foot Angle θ-- -- 8°
.177
*Controlling Parameter
4.32
.385 .410 9.78 10.41
.330 .350 .370 8.38 8.89 9.40
Overall Length D1 .549 .577 .605 13.94 14.66 15.37
Lead Thickness c.014 .020 .026 0.36 0.51 0.66
Pad Thickness c2 .045 -- .055 1.14 -- 1.40
Lead Width .037
b.026 .032 0.66 0.81 0.94
3° --
8°
7°3°
--
--
--
Exposed Pad Length D2 .303 REF 7.75 REF
Pad Length L3 .045 -- .067 1.14 -- 1.70
Note: For the most cu rr e nt pac ka ge dr aw i ngs, p le ase se e t he Mi c ro c hi p Pa ck ag ing Specifica t i on lo ca t ed
at http://www.microchip.com/packaging
2002-2012 Microchip Technology Inc. DS21374D-page 11
TC1263
5-Lead Plastic Transistor Outline (AT) (TO-220)
LH1
Q
E
b
e1
e
C1
J1
F
A
D
a
(5X)
ØP
EJECTOR PIN
e3
Drawing No. C04-036
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
*Controlling Parameter
Mold Draft Angle
Lead Width
Lead Thickness
a
C1
b
.014
Dimension Limits
Overall Height
Lead Length
Overall Width
Lead Pitch
A
L
E
.540
MIN
e
Units
.060
INCHES*
.022 0.36 0.56
MILLIMETERS
.190
.560 13.72
MINMAX
4.83
14.22
MAX
.160 4.06
3° 7° 3° 7°
Overall Length D
1.020.64.040.025
Overall Lead Centers e1 .263
.385
.560
.273 6.68 6.93
.072 1.52 1.83
.415 9.78 10.54
.590 14.22 14.99
Through Hole Diameter P .146 .156 3.71 3.96
J1Base to Bottom of Lead .090 2.29.115 2.92
Through Hole Center Q.103 2.87.113 2.62
Flag Thickness F .045 1.40.055 1.14
Flag Length H1 .234 6.55.258 5.94
Space Between Leads e3 .030 1.02.040 0.76
Note: For th e mo s t c urr e nt pac kag e d r awi n gs , plea se se e th e M ic roc hi p Pa c ka gi n g Sp e ci f ic at i on lo c at e d
at http://www.microchip.com/packaging
TC1263
DS21374D-page 12 2002-2012 Microchip Technology Inc.
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil Body (SOIC)
Foot Angle 048048
1512015120
Mold Draft Angle Bottom 1512015120
Mold Draft Angle Top 0.510.420.33.020.017.013BLead Width 0.250.230.20.010.009.008
c
Lead Thickness
0.760.620.48.030.025.019LFoot Length 0.510.380.25.020.015.010hChamfer Distance 5.004.904.80.197.193.189DOverall Len gth 3.993.913.71.157.154.146E1Molded Package Width 6.206.025.79.244.237.228EOverall Width 0.250.180.10.010.007.004A1Standoff § 1.551.421.32.061.056.052A2Molded Package Thickness 1.751.551.35.069.061.053AOverall Height 1.27.050
p
Pitch 88
n
Number of Pin s MAXNOMMINMAXNOMMINDimen sion Li mits MILLIMETERSINCHES*Units
2
1
D
n
p
B
E
E1
h
L
c
45
A2
A
A1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254 mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
§ Significant Characteristic
Note: For the most cu rr e nt pac ka ge dr aw i ngs, p le ase se e t he Mi c ro c hi p Pa ck ag ing Specifica t i on lo ca t ed
at http://www.microchip.com/packaging
2002-2012 Microchip Technology Inc. DS21374D-page 13
TC1263
APPENDIX A: REVISION HISTORY
Revision D (November 2012)
Added a note to each package outline drawing.
Revision C (January 2005)
The following is the list of modifications:
1. Changes to DC Characteristics table
2. Added Appendix A: Re vision Hist ory.
Revision B (May 2002)
No info rmation for this revision.
Revision A (March 2002)
Original data sheet release.
TC1263
DS21374D-page 14 2002-2012 Microchip Technology Inc.
NOTES:
2002-2012 Microchip Technology Inc. DS21374D-page 15
TC1263
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Devi ce TC1263 Fixed Output CMOS LDO with Shutdown
Voltage Option:* 2.5 = 2.5V
2.8 = 2.8V
3.0 = 3.0V
3.3 = 3.3V
5.0 = 5.0V
* Other output voltages are available. Please contact your
local Microchip sales office for details.
Temperature Range: V = -40°C to +125°C
Packag e AT = Plastic (TO-220) , 5-Le ad
ET = Plastic Transistor Outline (DDPAK), 5-Lead
ETTR = Plastic Transistor Outline (DDPAK), 5-Lead,
Tape and Reel
OA = Plastic SOIC, (150 mil Body), 8-lead
OATR = Plastic SOIC, (150 mil Body), 8-lead,
Tape and Reel
PART NO. X.X XX
PackageVoltage
Option
Device
Examples:
a) TC1263-2.5VAT 2.5V LDO, TO-220-5 pkg.
b) TC1263-2.8VAT 2.8V LDO, TO-220-5 pkg.
c) TC1263-3.0VAT 3.0V LDO, TO-220-5 pkg.
d) TC1263-3.3VAT 3.3V LDO, TO-220-5 pkg.
e) TC1263-5.0VAT 5.0V LDO, TO-220-5 pkg.
a) TC1263-2.5VETTR 1.8V LDO, DDPAK-5 pkg.,
Tape and Reel
b) TC1263-2.8VETTR 2.5V LDO, DDPAK-5 pkg.,
Tape and Reel
c) TC1263-3.0VETTR 3.0V LDO, DDPAK-5 pkg.,
Tape and Reel
d) TC1263-3.3VETTR 3.3V LDO, DDPAK-5 pkg.,
Tape and Reel
a) TC1263-2.5VOA 1.8V LDO, SOIC-8 pkg.
b) TC1263-2.5VOATR 1.8V LDO, SOIC-8 pkg.,
Tape and Reel
c) TC1263-2.8VOA 2.5V LDO, SOIC-8 pkg.
d) TC1263-2.8VOATR 2.5V LDO, SOIC-8 pkg.,
Tape and Reel
e) TC1263-3.0VOA 3.0V LDO, SOIC-8 pkg.
f) TC1263-3.0VOATR 3.0V LDO, SOIC-8 pkg.,
Tape and Reel
g) TC1263-3.3VOA 3.3V LDO, SOIC-8 pkg.
h) TC1263-3.3VOATR 3.3V LDO, SOIC-8 pkg.,
Tape and Reel
i) TC1263-5.0VOA 5.0V LDO, SOIC-8 pkg.
XX
Tap e and
Reel
X
Temperature
Range
TC1263
DS21374D-page 16 2002-2012 Microchip Technology Inc.
NOTES:
2002-2012 Microchip Technology Inc. DS21374D-page 17
Information contained in this publication regarding device
applications a nd the lik e is provided only f or yo ur convenience
and may be supers ed ed by u pda t es . It is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTA RT, PIC 32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Contr ol Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM ,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense , HI- TIDE, In-Circuit Serial
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PI CC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Tec hnolo gy Germ any II GmbH & Co . & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767795
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of t he most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellec tual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® co de hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS21374D-page 18 2002-2012 Microchip Technology Inc.
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11/27/12