1
Subject to change without notice.
www.cree.com
FEATURES
• RectangularLEDRFPerformance
– 450&460nm
◊ TR-70™-70mWmin
• HighReliability-Eutectic,SolderPasteorPreforms
Attach
• LowForwardVoltage-3.4VfTypicalat50mA
• MaximumDCForwardCurrent–150mA
• 1000-VESDThresholdRating
• InGaNJunctiononThermallyConductiveSiC
Substrate
APPLICATIONS
• LargeLCDBacklighting
– Television
• GeneralIllumination
• MediumLCDBacklighting
– PortablePCs
– Monitors
• LEDVideoDisplays
• WhiteLEDs
TR350M™ LEDs
CxxxTR3547-Sxx00
Data Sheet
Cree’sTR350MLEDsarethenextgenerationofsolid-stateLEDemittersthatcombinehighlyefcientInGaNmaterials
withCree’sproprietarydevicetechnologyandsilicon-carbidesubstratestodeliversuperiorvaluefortheTV-backlighting
andgeneral-illuminationmarkets.TheTR350MLEDsareamongthebrightestinthetop-viewmarketwhiledelivering
alowforwardvoltage,resultinginaverybrightandhighlyefcientsolution.Themetalbacksideallowsforeutectic
dieattachandenablessuperiorperformancefromimprovedthermalmanagement.Thedesignisoptimallysuitedfor
industry-standardtop-viewpackages.
CxxxTR3547-Sxx00 Chip Diagram
Data Sheet: CPR3EG Rev. -
Top View Bottom View Die Cross Section
Anode(+)
90μmdiameter
TR350MLED
350x470μm
MetalBackside
160x280μm
t=155μm
BottomSurface
200x320μm
Cathode(-)
98μm
Copyright©2010Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR70andTR350MaretrademarksofCree,Inc.
2CPR3EG Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR3547-Sxx00
DCForwardCurrent 150mA
PeakForwardCurrent(1/10dutycycle@1kHz) 200mA
LEDJunctionTemperature 150°C
ReverseVoltage 5V
OperatingTemperatureRange -40°Cto+100°C
StorageTemperatureRange -40°Cto+100°C
ElectrostaticDischargeThreshold(HBM)Note2 1000V
ElectrostaticDischargeClassication(MIL-STD-883E)Note2 Class2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA Note 3
Part Number Forward Voltage (Vf, V) Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min. Typ. Max. Max. Typ.
C450TR3547-Sxx00 2.7 3.4 3.7 2 20
C460TR3547-Sxx00 2.7 3.4 3.7 2 21
Mechanical Specications CxxxTR3547-Sxx00
Description Dimension Tolerance
P-NJunctionArea(μm) 310x430 ±35
ChipArea(μm) 350x470 ±35
ChipThickness(μm) 155 ±15
AuBondPadDiameterAnode(μm) 90 -5,+15
AuBondPadThicknesses(μm) 1.0 ±0.5
AuBondPadAreaCathode(μm) 98x98 -5,+15
BottomArea(μm) 200x320 ±35
BottomContactMetal(μm) 160x280 ±25
BottomContactMetalThickness(μm) 3.0 ±1.0
Notes:
1. Maximumratingsarepackage-dependent.TheaboveratingsweredeterminedusingaCree5mmx5mmSMTpackage(with
siliconeencapsulationandintrinsicAuSnmetaldieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Junction
temperatureshouldbecharacterizedinaspecicpackagetodeterminelimitations.Assemblyprocessingtemperaturemustnot
exceed325°C(<5seconds).
2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche
energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.
3. Allproductsconformtothelistedminimumandmaximumspecicationsforelectricalandopticalcharacteristicswhenassembled
andoperatedat50mAwithinthemaximumratingsshownabove.Efciencydecreasesathighercurrents.Typicalvaluesgiven
arewithinthe rangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.All
measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxyencapsulantandintrinsicAuSnmetaldie
attach).OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE.
Copyright©2010Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR70andTR350MaretrademarksofCree,Inc.
3CPR3EG Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Standard Bins for CxxxTR3547-Sxx00
LEDchipsaresortedtotheradiant uxanddominant wavelengthbinsshown.Asorteddiesheetcontainsdiefrom
onlyonebin.Sorteddiekit(CxxxTR3547-Sxxxx)ordersmaybelledwithanyorallbins(CxxxTR3547-xxxx)contained
inthekit.AllradiantuxanddominantwavelengthvaluesshownandspeciedareatIf=50mA.
Dominant Wavelength (nm)
C450TR3547-S7000
C450TR3547-0213 C450TR3547-0214 C450TR3547-0215 C450TR3547-0216
C450TR3547-0209 C450TR3547-0210 C450TR3547-0211 C450TR3547-0212
C450TR3547-0205 C450TR3547-0206 C450TR3547-0207 C450TR3547-0208
C450TR3547-0201 C450TR3547-0202 C450TR3547-0203 C450TR3547-0204
447.5 450 452.5445 455
88
82
76
70
Radiant Flux (mW)
C460TR3547-S7000
C460TR3547-0213 C460TR3547-0214 C460TR3547-0215 C460TR3547-0216
C460TR3547-0209 C460TR3547-0210 C460TR3547-0211 C460TR3547-0212
C460TR3547-0205 C460TR3547-0206 C460TR3547-0207 C460TR3547-0208
C460TR3547-0201 C460TR3547-0202 C460TR3547-0203 C460TR3547-0204
Dominant Wavelength (nm)
457.5 460 462.5455 465
Radiant Flux (mW)
88
82
76
70
Copyright©2010Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR70andTR350MaretrademarksofCree,Inc.
4CPR3EG Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Characteristic Curves
ThesearerepresentativemeasurementsfortheTRLEDproduct.Actualcurveswillvaryslightlyforthevariousradiant
uxanddominantwavelengthbins.
0
20
40
60
80
100
120
320 420 520 620
Relative Intensity (%)
Wavelength (nm)
Relative Intensity vs Peak Wavelength
0%
50%
100%
150%
200%
250%
300%
350%
400%
0 50 100 150 200
Relative Light Intensity
If (mA)
Relative Intensity vs. Forward Current
-2
-1
0
1
2
0 50 100 150 200
Dominant Wavelength Shift (nm)
If (mA)
Wavelength Shift vs. Forward Current
0%
50%
100%
150%
200%
250%
300%
350%
400%
0 50 100 150 200
If (mA)
Relative Intensity vs. Forward Current
-2
-1
0
1
2
0 50 100 150 200
Dominant Wavelength Shift (nm)
If (mA)
Wavelength Shift vs. Forward Current
0
50
100
150
200
0 1 2 3 4 5
If (mA)
Vf (V)
Forward Current vs. Forward Voltage
Copyright©2010Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR70andTR350MaretrademarksofCree,Inc.
5CPR3EG Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Copyright © 2009, Cree, Inc. ConfidentialCopyright © 2009, Cree, Inc. Confidential pg. 1
Radiation Pattern
ThisisarepresentativeradiationpatternfortheTRLEDproduct.Actualpatternswillvaryslightlyforeachchip.