SILICON EPITAXIAL
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8302
Issue 1
Page 1 of 3
2N4915
• Low Collector Saturation Voltage.
• Hermetic TO3 Metal Package.
• Designed For General Purpose, Switching
and Power Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 80V
VCEO Collector – Emitter Voltage 80V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 5A
IB Base Current 1.0A
PD Total Power Dissipation at TC = 25°C 87.5W
Derate Above 25°C 0.5W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC
Thermal Resistance, Junction To Case 2 °C/W
SILICON EPITAXIAL
NPN TRANSISTOR
2N4915
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8302
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA 80 V
VCE = 80V VBE = -1.5V 1.0
ICEV Collector Cut-Off Current
TC = 150°C 2
ICEO Collector Cut-Off Current VCE = 80V IB = 0 1.0
ICBO Collector Cut-Off Current VCB = 80V IE = 0 1.0
IEBO Emitter Cut-Off Current VEB = 5V IC = 0 1.0
mA
IC = 2.5A VCE = 2V 25 100
hFE
(1)
Forward-current transfer
ratio IC = 5A VCE = 2V 7
VBE(on)
(1)
Base-Emitter Voltage IC = 2.5A VCE = 2V 1.4
IC = 2.5A IB = 0.25A 1.0
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 5A IB = 1.0A 1.5
V
DYNAMIC CHARACTERISTICS
IC = 500mA VCE = 10V
hfe Small-Signal Current Gain
f = 1.0KHz
20
IC = 1.0A VCE = 10V
fT Transition Frequency
f = 1.0MHz
4 MHz
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON EPITAXIAL
NPN TRANSISTOR
2N4915
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8302
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO
-
204AA) METAL PACKAGE
Underside View
Pin 1 - Base Pin 2 - Emitter Case - Collector
1 2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
