2N5320
2N5321
SMALL SIGNAL NPN TRANSISTORS
■SILICO N EP ITA X IAL PLANA R NP N
TRANSISTORS
■MEDIUM POWER AMPLIFIER
■PNP CO MP LEM ENT S ARE 2N5322 AN D
2N5323
DESCRIPTION
The 2N5320 and 2N5321 are silicon epitaxial
planar NPN transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commerc i al equipments.
The complementary PNP types are respectively
the 2N5322 and 2N5323
INTERNAL SCHEMATI C DIAG RAM
June 1997
TO-39
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
2N5320 2N5321
VCBO Collector-Base Voltage (IE = 0) 100 75 V
VCEV Collector-Emitter Voltage (VBE = 1.5V) 100 75 V
VCEO Collector-Emitter Voltage (IB = 0) 75 50 V
VEBO Emitter-Base Voltage (IC = 0) 6 5 V
ICCollector Current 1.2 A
ICM Collector Peak C urrent 2 A
IBBase Current 1 A
Ptot Total Dissipation at Tamb = 25 oC1W
P
tot Total Dissipation at Tc = 25 oC10W
T
stg, TjStorage and Junction Temperature -65 to 200 oC
1/4