2N5320
2N5321
SMALL SIGNAL NPN TRANSISTORS
SILICO N EP ITA X IAL PLANA R NP N
TRANSISTORS
MEDIUM POWER AMPLIFIER
PNP CO MP LEM ENT S ARE 2N5322 AN D
2N5323
DESCRIPTION
The 2N5320 and 2N5321 are silicon epitaxial
planar NPN transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commerc i al equipments.
The complementary PNP types are respectively
the 2N5322 and 2N5323
INTERNAL SCHEMATI C DIAG RAM
June 1997
TO-39
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
2N5320 2N5321
VCBO Collector-Base Voltage (IE = 0) 100 75 V
VCEV Collector-Emitter Voltage (VBE = 1.5V) 100 75 V
VCEO Collector-Emitter Voltage (IB = 0) 75 50 V
VEBO Emitter-Base Voltage (IC = 0) 6 5 V
ICCollector Current 1.2 A
ICM Collector Peak C urrent 2 A
IBBase Current 1 A
Ptot Total Dissipation at Tamb = 25 oC1W
P
tot Total Dissipation at Tc = 25 oC10W
T
stg, TjStorage and Junction Temperature -65 to 200 oC
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 17.5
175
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 80 V for 2N5320
VCB = 60 V for 2N5321 0.5
5µA
µA
IEBO Collector Cut-off
Current (IC = 0) VEB = 5 V for 2N5320
VEB = 4 V for 2N5321 0.1
0.5 µA
µA
V(BR)CEV Collector-Emitter
Breakdown Voltage
(VBE = 1.5V)
IC = 100 µA
for 2N5320
for 2N5321 100
75 V
V
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for 2N5320
for 2N5321 75
50 V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA
for 2N5320
for 2N5321 6
5V
V
VCE(sat)Collector-Emitter
Saturation Voltage IC = 500 mA IB = 50 mA
for 2N5320
for 2N5321 0.5
0.8 V
V
VBEBase-Emitter Voltage IC = 500 mA VCE = 4 V
for 2N5320
for 2N5321 1.1
1.4 V
V
hFEDC Current Gain for 2N5320
IC = 500 mA VCE = 4 V
IC = 1 A VCE = 2 V
for 2N5321
IC = 500 mA VCE = 4 V
30
10
40
130
250
fTTransition Frequency IC = 50 mA VCE = 4 V f = 10 MHz 50 MHz
ton Turn-on Time IC = 500 mA VCC = 30 V
IB1 = 50 mA 80 ns
toff Turn-off Time IC = 500 mA VCC = 30 V
IB1 = -IB2 = 50 mA 800 ns
P ulsed: P ulse duration = 300 µs, duty cycle = 1 %
2N5320/2N5321
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
o
(typ.)
L
G
I
D A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
2N5320/2N5321
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informat ion no r for any infring emen t of pat e nt s or ot her right s o f third par ties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specificat ions mention ed
in this publicat i on ar e subj ec t to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly suppli ed.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approv al of SGS-THOM SON M icroele cton ics.
© 1997 SGS- THOMSO N M icro elect roni cs - Pr in ted in Ita ly - All Rig hts Rese rved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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.
2N5320/2N5321
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