SQJ910AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) Power MOSFET 30 RDS(on) () at VGS = 10 V 0.007 * 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0086 * AEC-Q101 Qualifiedd ID (A) per leg 30 Configuration Dual * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK(R) SO-8L Dual m 5m 6.1 D1 5.1 3m m D2 D 2 D 1 G1 4 G2 S2 G2 3 2 G1 1 S1 S1 Bottom View N-Channel MOSFET S2 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ910AEP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 30 Gate-Source Voltage VGS 20 TC = 25 C Continuous Drain Currenta TC = 125 C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 C Maximum Power Dissipationb TC = 125 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak ID 30 30 IDM 120 IAS 29 EAS 42 TJ, Tstg Temperature)e, f V 30 IS PD UNIT 48 16 - 55 to + 175 260 A mJ W C THERMAL RESISIANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL LIMIT RthJA 85 RthJC 3.1 UNIT C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-1727-Rev. A, 26-Aug-13 Document Number: 63748 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ910AEP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS = 0 V, ID = 250 A 30 - - VGS(th) VDS = VGS, ID = 250 A 1.5 2 2.5 VDS = 0 V, VGS = 20 V IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 C - - 150 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 12 A - 0.0058 0.007 VGS = 4.5 V ID = 10.7 A - 0.0072 0.0086 VGS = 10 V ID = 12 A, TJ = 125 C - - 0.0096 VGS = 10 V ID = 12 A, TJ = 175 C VDS = 15 V, ID = 12 A - - 0.012 - 72 - - 1495 1869 - 313 391 V nA A A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 126 158 Total Gate Chargec Qg - 25.8 39 Gate-Source Chargec Qgs - 4.3 - Gate-Drain Chargec Qgd - 4.3 - 0.6 1.38 2.10 - 11 16 Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Rg VGS = 0 V VGS = 10 V VDS = 15 V, f = 1 MHz VDS = 15 V, ID = 11.3 A f = 1 MHz td(on) tr td(off) VDD = 15 V, RL = 1.4 ID 1 A, VGEN = 10 V, Rg = 1 tf pF nC - 3 4 - 27 40 - 7 11 - - 120 A - 0.77 1.2 V ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 7.8 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1727-Rev. A, 26-Aug-13 Document Number: 63748 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ910AEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 VGS = 3 V 24 TC = 25 C 16 8 8 0 0 TC = 125 C TC = - 55 C 0 2 4 6 8 10 0 1 2 Output Characteristics 4 5 Transfer Characteristics 10 100 TC = - 55 C TC = 25 C 8 80 gfs - Transconductance (S) ID - Drain Current (A) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 6 TC = 25 C 4 TC = 125 C 2 60 TC = 125 C 40 20 TC = - 55 C 0 0 0 1 2 3 4 0 5 3 Transfer Characteristics 9 12 15 Transconductance 0.025 2500 0.020 2000 C - Capacitance (pF) RDS(on) - On-Resistance () 6 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 0.015 0.010 VGS = 4.5 V 0.005 Ciss 1500 1000 500 VGS = 10 V Coss Crss 0.000 0 8 16 24 ID - Drain Current (A) On-Resistance vs. Drain Current S13-1727-Rev. A, 26-Aug-13 32 40 0 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) 30 Capacitance Document Number: 63748 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ910AEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 40 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) ID = 11.3 A VDS = 15 V 8 6 4 2 36 34 32 30 0 0 6 11 17 Qg - Total Gate Charge (nC) 22 - 50 - 25 28 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Gate Charge Drain-Source Breakdown vs. Junction Temperature 0.05 100 0.04 RDS(on) - On-Resistance () 10 TJ = 150 C IS - Source Current (A) ID = 1 mA 38 1 0.1 TJ = 25 C 0.03 0.02 TJ = 150 C 0.01 0.01 0.001 0.00 TJ = 25 C 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 2.0 VGS = 10 V ID = 11.3 A 0.2 1.7 VGS(th) Variance (V) RDS(on) - On-Resistance (Normalized) 2 1.4 VGS = 4.5 V 1.1 - 0.1 ID = 5 mA - 0.4 ID = 250 A - 0.7 0.8 - 1.0 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature S13-1727-Rev. A, 26-Aug-13 175 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (C) Threshold Voltage Document Number: 63748 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ910AEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) IDM Limited ID - Drain Current (A) 100 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC ID Limited 1 Limited by RDS(on)* BVDSS Limited 0.1 TC = 25 C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S13-1727-Rev. A, 26-Aug-13 Document Number: 63748 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ910AEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63748. S13-1727-Rev. A, 26-Aug-13 Document Number: 63748 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) SO-8L Case Outline for Al Parts Revision: 07-Sep-15 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0 - 0.117 10 0 - 10 ECN: C15-1203-Rev. A, 07-Sep-15 DWG: 6044 Note * Millimeters will gover Revision: 07-Sep-15 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK(R) SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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