BFY650B-11 HiRel NPN Silicon Germanium RF Transistor HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz 4 3 1 2 Hermetically sealed microwave package Space Qualified ESCC Detail Spec. No.: 5611/010 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BFY650B-11 - Pin Configuration 1 2 C E Package 3 B 4 E Micro-X Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Ta > 0 C Ta 0 C VCEO 4.0 3.7 V V Collector-base voltage VCBO 13 V Emitter-base voltage VEBO 1.2 V Collector current 1) IC 150 mA Base current IB 10 mA Junction temperature Tj 175 C Operating temperature range Top -65...+175 C Storage temperature range Tstg -65...+175 C Rth JS 150 K/W Thermal Resistance Junction-soldering point 2) Notes.: 1) For TS 85C. For TS > 85 C derating is required. 2) TS is measured on the emitter lead at the soldering point to the pcb. IFAG PMM RPD D HIR 1 of 3 V1, November 2012 BFY650B-11 Electrical Characteristics at TA=25C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. ICBO - - 10 A ICEX - - 200 A IEBO - - 10 A hFE 110 180 270 - CCB - 0.26 - pF CCE - 0.55 - pF CEB - 1.4 - pF DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 Collector-emitter cutoff current 1) VCE = 4.0 V, IB = 0.1 A Emitter-base cuttoff current VEB = 1.2 V, IC = 0 DC current gain IC = 80 mA, VCE = 3 V AC Characteristics Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure (ZS = Zsopt) F dB IC = 10 mA, VCE = 3 V, f = 1.8 GHz IC = 10 mA, VCE = 3 V, f = 6.0 GHz - 0.9 1.4 - |S21e|2 Insertion power gain (ZS = ZL = 50 ) IC = 80 mA, VCE = 3 V, f = 1.8 GHz IC = 80 mA, VCE = 3 V, f = 6.0 GHz dB - 16.5 6.7 - - 19.2 - 2) Power gain (ZS = ZSopt , ZL = ZLopt) Gma IC = 80 mA, VCE = 3 V, f = 1.8 GHz dB Gma2) Power gain (ZS = ZSopt , ZL = ZLopt) dB - IC = 80 mA, VCE = 3 V, f = 6.0 GHz 9.3 - Notes.: 1) This Test assures V(BR)CE0 > 4.0V 2) Gma S 21 ( k k 2 1) , S12 IFAG PMM RPD D HIR Gms S 21 S12 2 of 3 V1, November 2012 BFY650B-11 Micro-X Package 4 Edition 2012-11 3 Published by Infineon Technologies AG 1 2 85579 Neubiberg, Germany (c) Infineon Technologies AG 2012 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG PMM RPD D HIR 3 of 3 V1, November 2012 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BFY650B11SAMB4SA1 BFY650B11PB4SA1 BFY650B11ESB4SA1