BFY650B-11
IFAG PMM RPD D HIR 1 of 3 V1, November 2012
HiRel NPN Silicon Germanium RF Transistor
HiRel Discrete and Microwave Semiconductor
For high power amplifiers
Ideal for low phase noise oscilators
Maximum available gain: Gma = 19 dB at 1.8 GHz
Noise figure F = 0.9 dB at 1.8 GHz
Hermetically sealed microwave package
Space Qualified
ESCC Detail Spec. No.: 5611/010
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Pin Configuration
1 2 3 4
Package
BFY650B-11
-
C
E
B
E
Micro-X
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Ta > 0 °C
Ta ≤ 0 °C
VCEO
4.0
3.7
V
V
Collector-base voltage
VCBO
13
V
Emitter-base voltage
VEBO
1.2
V
Collector current 1)
IC
150
mA
Base current
IB
10
mA
Junction temperature
Tj
175
C
Operating temperature range
Top
-65...+175
C
Storage temperature range
Tstg
-65...+175
C
Thermal Resistance
Junction-soldering point 2)
Rth JS
150
K/W
Notes.:
1) For TS ≤ 85°C. For TS > 85 °C derating is required.
2) TS is measured on the emitter lead at the soldering point to the pcb.
1 2
34
BFY650B-11
IFAG PMM RPD D HIR 2 of 3 V1, November 2012
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO
-
-
10
µA
Collector-emitter cutoff current 1)
VCE = 4.0 V, IB = 0.1 µA
ICEX
-
-
200
µA
Emitter-base cuttoff current
VEB = 1.2 V, IC = 0
IEBO
-
-
10
A
DC current gain
IC = 80 mA, VCE = 3 V
hFE
110
180
270
-
AC Characteristics
Collector-base capacitance
VCB = 2 V, VBE = vbe = 0, f = 1 MHz
CCB
-
0.26
-
pF
Collector-emitter capacitance
VCE = 2 V, VBE = vbe = 0, f = 1 MHz
CCE
-
0.55
-
pF
Emitter-base capacitance
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
CEB
-
1.4
-
pF
Noise Figure (ZS = Zsopt)
IC = 10 mA, VCE = 3 V, f = 1.8 GHz
IC = 10 mA, VCE = 3 V, f = 6.0 GHz
F
-
-
0.9
1.4
-
-
dB
Insertion power gain (ZS = ZL = 50 )
IC = 80 mA, VCE = 3 V, f = 1.8 GHz
IC = 80 mA, VCE = 3 V, f = 6.0 GHz
|S21e|2
-
-
16.5
6.7
-
-
dB
Power gain (ZS = ZSopt , ZL = ZLopt)
IC = 80 mA, VCE = 3 V, f = 1.8 GHz
Gma2)
-
19.2
-
dB
Power gain (ZS = ZSopt , ZL = ZLopt)
IC = 80 mA, VCE = 3 V, f = 6.0 GHz
Gma2)
-
9.3
-
dB
Notes.:
1) This Test assures V(BR)CE0 > 4.0V
2)
GS
Sk k
ma
21
12 1
2
( )
,
GS
S
ms 21
12
BFY650B-11
IFAG PMM RPD D HIR 3 of 3 V1, November 2012
Micro-X Package
Edition 2012-11
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2012
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
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