PIN Diode Chips for Hybrid MIC
Switches/Attenuators
Technical Data
Features
• Low Series Resistance
0.8 Ω Typical
• Nitride Passivated
Description
These PIN diode chips are silicon
dioxide or nitride passivated. The
5082-0001 has a mesa construc-
tion and the 5082-0012 has a
planar construction. The fabrica-
tion processes are optimized for
long term reliability and tightly
controlled for uniformity in
electrical performance.
Applications
These general purpose PIN
diodes are intended for low
power switching applications
such as duplexers, antenna
switching matrices, digital phase
shifters, time multiplex filters, TR
switches, pulse and amplitude
modulators, limiters, leveling
circuits, and attenuators.
The 5082-0001 is optimized for
applications requiring fast
switching.
5082-0001
5082-0012
Outline 01B
D
X
Y
X
5082-0001
D
X
Y
X
ALL OTHER CHIPS
PART NO. 5082-
0012
0.10
(4)
0.10
(4.0)
Au. Cathode
Au. Anode
DIMENSIONS
D
±0.03 (1)
X
±0.05 (2)
Y
±0.03 (1)
Top Contact
Bottom Contact
0001
0.06
(2.5)
Au. Anode
Au. Cathode
Dimensions in millimeters (1/1000 inch)
0.38
(15) 0.11
(4.5)
Maximum Ratings
Junction Operating and Storage
Temperature Range .............................................................-65 °C to +150°C
Soldering Temperature
5082-0001.............................................................. +300°C for 1 min. max.
5082-0012.............................................................. +425°C for 1 min. max.
Electrical Specifications at TA = 25°C Typical Parameters
Nearest Typical
Chip Equivalent Minimum Maximum Typical Reverse
Part Packaged Breakdown Junction Series Typical Recovery
Number Part No. Voltage Capacitance Resistance Lifetime Time
5082- 5082- VBR (V) Cj (pF) RS (Ω)τ (ns) trr (ns)
0001 3041 70 0.16* 0.8* 35* 5
0012 3001 150 0.12 1.0 400 100
Test VR = VBR VR = 50 V IF = 100 mA IF = 50 mA IF = 20 mA
Conditions Measure *VR = 20 V *IF = 20 mA IR = 250 mA V R = 10 V
IR ≤ 10 mA f = 1 MHz f = 100 MHz *IR = 6 mA 90% Recovery
*IF = 10 mA
Assembly and Handling
Procedures for PIN Chips
1. Storage
Devices should be stored in a dry
nitrogen purged dessicator or
equivalent.
2. Cleaning
If required, surface contamination
may be removed with electronic
grade solvents. Typical solvents,
such as freon (T.F. or T.M.C.),
acetone, deionized water, and
methanol, or their locally ap-
proved equivalents, can be used
singularly or in combinations.
Typical cleaning times per solvent
are one to three minutes. DI water
and methanol should be used (in
that order) in the final cleans.
Final drying can be accomplished
by placing the cleaned dice on
clean filter paper and drying with
an infrared lamp for 5-10 minutes.
Acids such as hydrofluoric (HF),
nitric (HNO3) and hydrochloric
(HCl) should not be used.
The effects of cleaning methods/
solutions should be verified on
small samples prior to submitting
the entire lot.
Following cleaning, dice should
be either used in assembly
(typically within a few hours) or
stored in clean containers in a
reducing atmosphere or a vacuum
chamber.
3. Die Attach
a. Eutectic
5082-0001
AuSn preform with stage tempera-
ture of 300°C for one minute max.
5082-0012
AuSn preform with stage tempera-
ture of 310°C for one minute max.
AuGe preform with stage tem-
perature of 390°C for one minute
max.
b. Epoxy
For epoxy die-attach, conductive
silver-filled or gold-filled epoxies
are recommended. This method
can be used for all Agilent PIN
chips.
4. Wire Bonding
Either ultrasonic or thermo-
compression bonding techniques
can be employed. Suggested wire
is pure gold, 0.7 to 1.5 mil diam-
eter. Ultrasonic bonding method
should be avoided for the
5082-0001 diode chip.
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-8880E (11/99)